AP09N70R-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test DD Fast Switching Simple Drive Requirement BVDSS 650V RDS(ON) 0.75 ID G 9A G SS Description AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D S TO-262(R) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 9 A ID@TC=100 Continuous Drain Current, V GS @ 10V 5 A 40 A 156 W 1.25 W/ 305 mJ 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current 9 A EAR Repetitive Avalanche Energy 9 mJ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 0.8 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 /W Data & specifications subject to change without notice 1 AP09N70R-A o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 650 - - V - 0.6 - V/ VGS=10V, ID=4.5A - - 0.75 BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA 3 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=4.5A - 4.5 - S IDSS Drain-Source Leakage Current VDS=650V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=520V, VGS=0V - - 500 uA Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=9A - 44 - nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 11 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 12 - nC 3 td(on) Turn-on Delay Time VDD=300V - 19 - ns tr Rise Time ID=9A - 21 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 56 - ns tf Fall Time RD=34 - 24 - ns Ciss Input Capacitance VGS=0V - 2660 - pF Coss Output Capacitance VDS=25V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Min. Typ. - - 9 A - - 40 A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.5V Continuous Source Current ( Body Diode ) 1 Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=9A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature o 2.Starting Tj=25 C , VDD=50V , L=6.8mH , RG=25 , IAS=9A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP09N70R-A 10 10 10V 6.0V 5.0V ID , Drain Current (A) 8 10V 6.0V 5.0V 4.5V o T C =150 C 8 ID , Drain Current (A) T C =25 o C 6 4 4.5V 6 4 4.0V 2 2 V G = 3 .5 V 4.0V V G = 3 .5 V 0 0 0 3 6 9 0 12 V DS , Drain-to-Source Voltage (V) 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 Normalized RDS(ON) Normalized BVDSS (V) I D =4.5A V G =10V 1.1 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C ) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 5 100 4 T j = 150 o C o T j = 25 C VGS(th) (V) IS (A) 10 3 1 2 1 0.1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP09N70R-A f=1.0MHz 16 10000 C iss 12 V DS =320V V DS =400V V DS =480V C (pF) VGS , Gate to Source Voltage (V) I D =9A 8 C oss 100 C rss 4 0 1 0 20 40 60 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 Normalized Thermal Response (Rthjc) Duty factor=0.5 ID (A) 100us 1ms 1 10ms 100ms DC o T c =25 C Single Pulse 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.1 1 10 100 1000 10000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4