DMNH6021SPD 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features and Benefits V(BR)DSS RDS(ON) Max 60V 25m @ VGS = 10V 40m @ VGS = 4.5V ID Max TC = +25C 32A 25A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Rated to +175C - Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching - Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) - Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Complaint Part is Available Under Separate Datasheet (DMNH6021SPDQ) Mechanical Data Backlighting Power Management Functions DC-DC Converters (R) Case: PowerDI 5060-8 (Type C) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) S1 D1 G1 D1 S2 D2 G2 D2 G2 G1 Bottom View S2 S1 Pin1 Top View D2 D1 Pin out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMNH6021SPD-13 Notes: Case PowerDI5060-8 (Type C) Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information = Manufacturer's Marking H6021SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 - 53) PowerDI is a registered trademark of Diodes Incorporated. DMNH6021SPD Document number: DS37392 Rev. 3 - 2 1 of 7 www.diodes.com June 2016 (c) Diodes Incorporated DMNH6021SPD Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS Value 60 20 Units V V Continuous Drain Current (Note 6) VGS = 10V TA = +25C TA = +70C ID 8.2 6.5 A Continuous Drain Current (Note 7) VGS = 10V TC = +25C TC = +100C ID 32 22 A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) IDM 80 A Maximum Continuous Body Diode Forward Current (Note 7) IS 32 A Avalanche Current, L = 0.1mH (Note 8) IAS 35 A Avalanche Energy, L = 0.1mH (Note 8) EAS 64 mJ Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation (Note 5) Value 1.5 99 53 2.8 54 27 2.2 -55 to +175 PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RJA RJC TJ, TSTG Units W C/W W C/W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Symbol Min Typ Max BVDSS IDSS 60 -- -- V -- -- 1 A VGS = 0V, ID = 250A VDS = 60V, VGS = 0V IGSS -- -- 100 nA VGS = 20V, VDS = 0V 1 -- 15 3 V VDS = VGS, ID = 250A -- 25 -- 21 40 VSD -- 0.75 1.2 V pF pF VGS(TH) RDS(ON) Unit m CISS -- 1,143 -- COSS CRSS -- -- 168 69 -- -- RG -- 2.1 -- Total Gate Charge (VGS = 10V) QG -- 20.1 -- nC Total Gate Charge (VGS = 6V) Gate-Source Charge Gate-Drain Charge QG -- 12 -- nC QGS -- 4.3 -- QGD tD(ON) -- -- -- 5.5 4.4 nC nC -- ns Turn-On Rise Time tR -- 6.0 -- ns Turn-Off Delay Time tD(OFF) -- 14.2 -- ns tF 5.4 21.2 -- -- ns ns 15.2 -- nC Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time tRR -- -- Body Diode Reverse Recovery Charge QRR -- Notes: pF Test Condition VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VGS = 0V, IS = 2.6A VDS = 25V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 20A, VDD = 30V, VGS = 10V, RG = 4.7, , ID = 20A IF=20A, di/dt=100A/s 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25C 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMNH6021SPD Document number: DS37392 Rev. 3 - 2 2 of 7 www.diodes.com June 2016 (c) Diodes Incorporated DMNH6021SPD 30 30 VGS = 10V 25 25 VGS = 4.5V ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 8V VGS = 4V 20 VGS = 3.5V 15 20 TA = 175C 15 T A = 150C T A = 125C 10 10 TA = 85C T A = 25C VGS = 3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0.5 1 1.5 2 2.5 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 30 25 VGS = 4.5V 20 15 VGS = 10V 10 10 0 1.5 3 15 20 25 30 35 40 45 I D, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 50 2 2.5 3 3.5 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 40 35 30 I D = 12A 25 20 15 10 5 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2.4 40 VGS = 10V 2.2 35 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE () 0 0 5 5 T A = -55C 5 5 T A = 175C 30 TA = 150C T A = 125C 25 20 TA = 85C 15 TA = 25C 10 T A = -55C 5 VGS = 10V 2 ID = 12A 1.8 1.6 VGS = 4.5V ID = 5A 1.4 1.2 1 0.8 0.6 00 5 10 15 20 25 30 35 40 I D, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMNH6021SPD Document number: DS37392 Rev. 3 - 2 45 50 0.4 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature 3 of 7 www.diodes.com -25 June 2016 (c) Diodes Incorporated DMNH6021SPD 2.4 VGS(th), G ATE THRESHO LD VO LTAGE (V) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 40 35 VGS = 10V 30 I D = 12A 25 20 VGS = 4.5V ID = 12A 15 10 5 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 50 2.2 2 ID = 1mA 1.8 I D = 250A 1.6 1.4 1.2 1 0.8 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 f=1MHz CT , JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 43 36 29 TA = 175C 22 T A = 150C T A = 125C T A = 25C T A = -55C 15 TA = 85C 8 1 0 C oss 100 10 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current C rss 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 100 10 R DS(on) Limited PW = 10s 8 I D, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) C iss 1000 DC 10 6 VDS = 30V I D = 20A 4 2 0 0 PW = 1s PW = 100ms PW = 10ms PW = 1ms 1 TJ (m ax ) = 175C TC = 25C VGS = 10V Single Pulse DUT on Infinite Heatsink 2 4 6 8 10 12 14 16 18 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMNH6021SPD Document number: DS37392 Rev. 3 - 2 20 0.1 0.1 4 of 7 www.diodes.com 10 1 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 June 2016 (c) Diodes Incorporated DMNH6021SPD r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R JC(t) = r(t) * R JC D = Single Pulse 0.001 0.000001 0.00001 DMNH6021SPD Document number: DS37392 Rev. 3 - 2 R JC = 2.2C/W Duty Cycle, D = t1/ t2 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 June 2016 (c) Diodes Incorporated DMNH6021SPD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) D D1 0(4x) c x E1 A1 E y Seating Plane e 1 01(4x) O1.000 Depth 0.070.030 b1(8x) DETAIL A e/2 b(8x) 1 b2(2x) D3 L k A k1 E2 D2 L4 M D2 La DETAIL A L1 PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k 1.27 k1 0.56 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 10 12 11 1 6 8 7 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) X4 8 Dimensions X3 Y1 X2 Y2 Y3 G1 X1 Y(4x) 1 X DMNH6021SPD Document number: DS37392 Rev. 3 - 2 C C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Value (in mm) 1.270 0.660 0.820 0.610 3.910 1.650 1.650 4.420 1.270 1.020 3.810 6.610 G 6 of 7 www.diodes.com June 2016 (c) Diodes Incorporated DMNH6021SPD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2016, Diodes Incorporated www.diodes.com DMNH6021SPD Document number: DS37392 Rev. 3 - 2 7 of 7 www.diodes.com June 2016 (c) Diodes Incorporated