CAXOCD165E1001C - Arcserve

DMNH6021SPD

Document number: DS37392 Rev. 3 - 2

1 of 7

www.diodes.com

June 2016

DMNH6021SPD

60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

PowerDI

Product Summary

V(BR)DSS

RDS(ON) Max

ID Max

TC = +25°C

60V

25mΩ @ VGS = 10V

32A

40mΩ @ VGS = 4.5V

25A

Description

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 Rated to +175°C – Ideal for High Ambient Temperature

Environments

 100% Unclamped Inductive Switching – Ensures More Reliable

and Robust End Application

 High Conversion Efficiency

 Low RDS(ON) – Minimizes On-State Losses

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 An Automotive-Complaint Part is Available Under Separate

Datasheet (DMNH6021SPDQ)

Mechanical Data

 Case: PowerDI®5060-8 (Type C)

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.097 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMNH6021SPD-13

PowerDI5060-8 (Type C)

2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Pin out

Top View

Equivalent Circuit

= Manufacturer’s Marking

H6021SD = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 16 = 2016)

WW = Week (01 - 53)

D1

S1

G1

D2

S2

G2

Bottom View

Top View

Pin1

S1

D2

D1

G2

D1

D2

G1

S2

PowerDI is a registered trademark of Diodes Incorporated.

DMNH6021SPD

Document number: DS37392 Rev. 3 - 2

2 of 7

www.diodes.com

June 2016

DMNH6021SPD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

TA = +25°C

TA = +70°C

ID

8.2

6.5

A

Continuous Drain Current (Note 7) VGS = 10V

TC = +25°C

TC = +100°C

ID

32

22

A

Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)

IDM

80

A

Maximum Continuous Body Diode Forward Current (Note 7)

IS

32

A

Avalanche Current, L = 0.1mH (Note 8)

IAS

35

A

Avalanche Energy, L = 0.1mH (Note 8)

EAS

64

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

1.5

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

99

°C/W

t<10s

53

Total Power Dissipation (Note 6)

PD

2.8

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

54

°C/W

t<10s

27

Thermal Resistance, Junction to Case (Note 7)

RθJC

2.2

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

60

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

1

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

1

—

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

15

25

mΩ

VGS = 10V, ID = 15A

—

21

40

VGS = 4.5V, ID = 12A

Diode Forward Voltage

VSD

—

0.75

1.2

V

VGS = 0V, IS = 2.6A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

CISS

—

1,143

—

pF

VDS = 25V, VGS = 0V,

f = 1MHz

Output Capacitance

COSS

—

168

—

pF

Reverse Transfer Capacitance

CRSS

—

69

—

pF

Gate Resistance

RG

—

2.1

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V)

QG

—

20.1

—

nC

VDS = 30V, ID = 20A,

Total Gate Charge (VGS = 6V)

QG

—

12

—

nC

Gate-Source Charge

QGS

—

4.3

—

nC

Gate-Drain Charge

QGD

—

5.5

—

nC

Turn-On Delay Time

tD(ON)

—

4.4

—

ns

VDD = 30V, VGS = 10V,

RG = 4.7Ω, , ID = 20A

Turn-On Rise Time

tR

—

6.0

—

ns

Turn-Off Delay Time

tD(OFF)

—

14.2

—

ns

Turn-Off Fall Time

tF

—

5.4

—

ns

Body Diode Reverse Recovery Time

tRR

—

21.2

—

ns

IF=20A, di/dt=100A/μs

Body Diode Reverse Recovery Charge

QRR

—

15.2

—

nC

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

DMNH6021SPD

Document number: DS37392 Rev. 3 - 2

3 of 7

www.diodes.com

June 2016

DMNH6021SPD

0

5

10

15

20

25

30

0 0.5 1 1.5 2 2.5 3

V = 3.0V

GS

V = 3.5V

GS

V = 4.5V

GS

V = 8V

GS

V = 10V

GS

V = 4V

GS

I , DRAIN CURRENT (A)

D

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristic

0

5

10

15

20

25

30

1.5 2 2.5 3 3.5 4

V = 5.0V

DS

T = 150°C

A

T = 125°C

AT = 85°C

A

T = 25°C

A

T = -55°C

A

T = 175°C

A

I , DRAIN CURRENT (A)

D

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

5

10

15

20

25

30

510 15 20 25 30 35 40 45 50

V = 4.5V

GS

V = 10V

GS

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

5

10

15

20

25

30

35

40

2 4 6 8 10 12 14 16 18 20

I = 12A

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

0

5

10

15

20

25

30

35

40

0 5 10 15 20 25 30 35 40 45 50

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 10V

GS

T = 175°C

A

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50 -25 0 25 50 75 100 125 150 175

V = 4.5V

GS

I = 5A

D

V = 10V

GS

I = 12A

D

R , DRAIN-SOURCE

DS(ON)

ON-RESISTANCE (NORMALIZED)

T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

DMNH6021SPD

Document number: DS37392 Rev. 3 - 2

4 of 7

www.diodes.com

June 2016

DMNH6021SPD

0

5

10

15

20

25

30

35

40

-50 -25 0 25 50 75 100 125 150 175

V = 4.5V

GS

I = 12A

D

V = 10V

GS

I = 12A

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50 -25 0 25 50 75 100 125 150 175

I = 1mA

D

I = 250µA

D

V , GATE THRESHOLD VOLTAGE (V)

GS(th)

T , JUNCTION TEMPERATURE ( C)

J

Figure 8 Gate Threshold Variation vs. Ambient Temperature

1

8

15

22

29

36

43

50

0 0.3 0.6 0.9 1.2 1.5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 175°C

A

I , SOURCE CURRENT (A)

S

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

10

100

1000

10000

0 5 10 15 20 25 30 35 40 45 50 55 60

Ciss

Coss

Crss

f=1MHz

C , JUNCTION CAPACITANCE (pF)

T

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

0

2

4

6

8

10

0 2 4 6 8 10 12 14 16 18 20

V = 30V

DS

I = 20A

D

V GATE THRESHOLD VOLTAGE (V)

GS

Q , TOTAL GATE CHARGE (nC)

gFigure 11 Gate Charge

0.1

1

10

100

0.1 1 10 100

RDS(on)

Limited

DC

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 10µs

W

T = 175°C

J(max)

T = 25°C

C

V = 10V

GS

Single Pulse

DUT on Infinite Heatsink

P = 1µs

W

I , DRAIN CURRENT (A)

D

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

DMNH6021SPD

Document number: DS37392 Rev. 3 - 2

5 of 7

www.diodes.com

June 2016

DMNH6021SPD

0.001

0.01

0.1

1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

R (t) = r(t) * R

 JC JC

R = 2.2°C/W

JC

Duty Cycle, D = t1/ t2

DMNH6021SPD

Document number: DS37392 Rev. 3 - 2

6 of 7

www.diodes.com

June 2016

DMNH6021SPD

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

PowerDI5060-8 (Type C)

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

PowerDI5060-8 (Type C)

Dim

Min

Max

Typ

A

0.90

1.10

1.00

A1

0

0.05

0.02

b

0.33

0.51

0.41

b1

0.300

0.366

0.333

b2

0.20

0.35

0.25

c

0.23

0.33

0.277

D

5.15 BSC

D1

4.85

4.95

4.90

D2

1.40

1.60

1.50

D3

-

3.98

E

6.15 BSC

E1

5.75

5.85

5.80

E2

3.56

3.76

3.66

e

1.27BSC

k

-

1.27

k1

0.56

-

L

0.51

0.71

0.61

La

0.51

0.71

0.61

L1

0.05

0.20

0.175

L4

-

0.125

M

3.50

3.71

3.605

x

-

1.400

y

-

1.900

θ

10°

12°

11°

θ1

6°

8°

7°

All Dimensions in mm

Dimensions

Value

(in mm)

C

1.270

G

0.660

G1

0.820

X

0.610

X1

3.910

X2

1.650

X3

1.650

X4

4.420

Y

1.270

Y1

1.020

Y2

3.810

Y3

6.610

DETAIL A

0(4x)

Seating Plane

A1

c

e

01(4x)

D1

E1

D

E

1

y

x

Ø1.000 Depth 0.07±0.030

A

DETAIL A

Lk

M

L1

D2

La

E2

b(8x) e/2

1

b1(8x)

b2(2x)

D2

k1

D3

L4

1

8

Y3

X4

Y1

Y2

X1

G1

X C

Y(4x)

G

X2

X3

DMNH6021SPD

Document number: DS37392 Rev. 3 - 2

7 of 7

www.diodes.com

June 2016

DMNH6021SPD

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com