Rugged Power MOSFETs IRF730R, IRF731R, IRF732R, IRF733R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A and 5.5A, 350V-400V fos(on) = 1.0Q and 1.50 Features: l@ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds lB Linear transfer characteristics BB High input impedance The IRF730R, IRF731R, 'RF732R and {RF733R are ad- File Number 2019 N-CHANNEL ENHANCEMENT MODE o 92Cs-42650 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE ue} vanced power MOSFETs designed, tested, and guaranteed DRAIN | fe to withstand a specified level of energy in the breakdown {FLANGE} | SS i DRAIN avalanche mode of operation. These are n-channel en- 7 oO hancement-mode silicon-gate power field-effect transis- ES tors designed for applications such as switching regulators, TOP view GATE switching converters, motor drivers, relay drivers, and driv- 92$-39526 ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be JEDEC TO-220AB Operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings Parameter IRF730R IRF731R IRF732A IRF733A Units Vos Drain - Source Voltage 400 350 400 350 Vv Voor Drain - Gate Voltage (Res = 20 KQ) @ 400 350 400 350 Vv lo @ Te = 25C Continuous Drain Current 5.5 5.5 45 45 A Ip @ Tc = 100C Continuous Drain Current 3.5 3.5 3.0 3.0 A lon Pulsed Drain Current @ 22 22 18 18 A Vos Gate - Source Voltage +20 Vv Po @ Te = 25C Max. Power Dissipation 75 (See Fig. 14) Ww Linear Derating Factor 0.6 (See Fig. 14) w/c Eas Single Pulse Avalanche Energy Rating @ 300 mj Te Storage femperature Range ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-142Rugged Power MOSFETs Electrical Characteristics @ T; = 25C (Unless Otherwise Specified) (RF730R, IRF731R, IRF732R, IRF733R P, Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF730R IRF732R | 400 | - Vv | Ves = OV IRF731R - IRF733R 350 - =- v Ip = 250A Vesum _ Gate Threshold Voltage ALL 2.0 = 4.0 Vv Vos = Vas, lo = 2504 A lass Gate-Source Leakage Forward ALL = = 500 nA Ves = 20V loss Gate-Source Leakage Reverse ALL -_ = -500 nA Vas = -20V loss Zero Gate Voltage Drain Current = = 250 HA Vos = Max. Rating, Vas = OV ALL [| | [1000 | wA | Vos = Max. Rating x 0.8, Vas = OV, Tc = 125C loiom On-State Drain Current @ IRF730R mF7ain| &5 [| | A Vos > loon X Rosion max, Vas = 10V IRF732R | 45 _ _ A IRF733R : Rosion Static Drain-Source On-State IRF730R} __ 08 1.0 Q Resistance @ IRF731R " = = Ves = 10V, lb = 3.0A IRF732R _ 1.0 15 Q IRF733R : : fe Forward Transconductance @ ALL 3.0 40 - S(0)_ | Vos > Inton X Rostonimar,, Ip = 3.0A Cis Input Capacitance ALL = 600 = PF | vos = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL ~ 150 = pF See Fig. 10 Crs Reverse Transfer Capacitance ALL = 40 = pF tation Turn-On Delay Time ALL = _ 30 ns Vop = 175V, lo = 3.0A, Zo == 15 t Rise Time ALL = = 35 ns See Fig. 17 tatort Turn-Off Delay Time ALL _ ~ 55 ns {MOSFET switching times are essentially th Fall Time ALL _ _ 35 ns independent of operating temperature.) Qa Total Gate Charge ALL _ 18 39 nc Ves = 10V, lo = 7.0A, Vos == 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL nc essentially independent of operating Qu Gate-Drain ("Miller") Charge ALL _ 7.0 _ nC perature.) Lo Internal Drain Inductance _ 3.5 _ nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL [~" Yas | | nH | Measured from the inductances. drain lead, 6mm (0.25 in.) from package to Lo center of die. Ls Internat Source Inductance ALL _ 75 _ nH Measured from the 6 source lead, 6mm us (0.25 in.) from 5 package to source uct aneas bonding pad. Thermal Resistance RuJC__Junction-to-Case ALL = = 1.67 | C/W RwCS Case-to-Sink ALL = 1.0 _ C/W_| Mounting surtace flat, smooth, and greased. RaJA _Junction-to-Ambient ALL _ _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF730R | __ _ 55 A Modified MOSFET symboi (Body Diode) IRE731R . showing the integral 8 {RAF732R 45 A reverse P-N junction rectifier. (RF733R | : ec Ise Pulse Source Current IRF730R} _ 22 A (Body Diode) @ IRF731R $ IRF732R eacn- 290 iRF733R| ~ | | 1 | A Vso Diode Forward Voltage @ IRF730R | _ - = = IRF731R 1.6 Vv Tc = 26C, Is = 5.5A, Vas = OV inevose| | | 18 | V | Te=25C, l= 4.5, Vas = OV tre Reverse Recovery Time ALL = 600 = ns Ts = 150C, le = 5.5A, dle/dt = 100A/us Qrr Reverse Recovered Charge ALL =_ 4.0 _ ue Ty = 150C, Ip = 5.5A, dir/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. T, = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = SOV, starting Ty = 25C, L = 17MH, Ros = 252, Ipeak = 5.5A. 6-143Rugged Power MOSFETs IRF730R, IRF731R, IRF732R, IRF733R 80 us PULSE Ip, ORAIN CURRENT (AMPERES} ig. ORAIN CURRENT (AMPERES} 50 100 150 700 280 Vos. DAAIN-TO SOURCE VOLTAGE (VOLTS) 300 VGs. 6 Fig. 1 Typical Output Characteristics Ip, DRAIN CURRENT (AMPERES \g. DRAIN CURRENT (AMPERES) 0 Te 25) c ty Rinse SINGLE 1676 2 4 6 8 Vps. DRAIN TO SOURCE VOL FAGE {VOLTS} Mh Vos. OR Fig. 3 Typical Saturation Characteristics SINGLE PULSE (TRANSIENT THERMAL IMPEDANCE} Zensc(tl/ Rinse, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) Vos > 'Dian) * Basten) max Ty = 012500 2 3 4 5 ATE TO SQUACE VOLTAGE ivOLTS) 6 Fig. 2 Typical Transfer Characteristics RATION IN THIS AREAIS LIMITED BY Ro stiny 50C MAX w Poti os oy fAF7SIR, SRi. it ! |1RF730R, 2A 50 100 200 AIN TO SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Sate Operating Area ol 1. DUTY FACTOR, D i 2 PER UNIT BASE = Ainyc = 1.67 OEG C/W 3. Tam - Te = Pom Zenucltt 5 to 2 fd ws = 2 5 4 2 5 wi = 2 5 we 2 5 to? ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Mi Effective Tr Thermal t d ad to 6-144 Case Vs. Pulse DurationRugged Power MOSFETs IRF730R, IRF731R , IRF732R, IRF733R 3. z o Ty > 1800C ~ Ty: -5800 N Ty = 250C S Tye 12800 | FT = 150C 9ts. TRANSCONOUCTANCE (SIEMENS) lpn. REVERSE DRAIN CURRENT (AMPERES) Vos 7 'Oton) * ROSton} max. 2 80 us PULSE Ty = 28C 10 0 2 4 6 8 10 a 2 3 4 Ig, DRAIN CURRENT (AMPERES) Vgp. SOURCE TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage BV pss. DRAIN TO SOUACE BREAKOOWN VOLTAGE (NORMALIZED! Roston). ORAIN-TO- SOURCE ON RESISTANCE (NORMALIZED! 02 -40 0 oti 80 120 160 40 0 40 380 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 20 2000 Vis Tn a 2 v Cing * Cys + Cyg, Cas =, ps 1600 Ss Cras = Cog 2 Vos 200v ye Cpa 3 320V AAFTOOR, 732A -e < , - Cogs Cost Coe S - T+ Cgg 3 (00 = Cyu * gg S z 2 3 z zg = 300 2 x . e $4 a : 400 S Ip - 7A _ FOR TEST CIRCUIT SEE FIGURE 18 a 0 20 0 0 50 0 8 16 24 32 40 Vos. DRAIN TO SOURCE VOLTAGE (VOLTS! Oy, TOTAL GATE CHARGE (nC) Fig. 10 Typicat Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-145Rugged Power MOSFETs IRF730R, IRF731R, IRF732R, IRF733R 3 a 2 = s 8 Vgs = 104 S Gs / a 5 / z 2 2 A Ves 20v 2 = y 3 & 5 ws = 3 = 3 Yr = 8 o z = < z! 5 S on 2 3 & Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION, INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE (S MINIMAL) 1. L fi 0 s 10 1s 20 25 30 25 50 75 100 125 150 Ig. DRAIN CURRENT (AMPERES) Tc. CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 30 | 0 I a j | ! 60 + | i - | - 4 : ! ! Pp. POWER DISSIPATION (WATTS) & t 10, - * - moe we | 1 0 20 40 60 80 100 120 140 Te. CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve VARY tp TO OBTAIN REQUIRED PEAK I, 92C5- 42660 Fig. 16 Unclamped Energy Waveforms 92cS- 42659 Fig. 15 Unclamped Energy Test Circult o os CURRENT MSOLATED REGULATOR SUPPLY? SAME TYPE AS OUT av T YVpg > Wav 1 pant BATTERY My S? PAF - 14Hr y Vo TO SCOPE Vos Fig. 17 Switching Time Test Circuit CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 6-146