1N5820US - 1N5822US and 1N6864US Available on commercial versions 3 Amp SQ-MELF Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This series of 3 amp Schottky rectifiers are compact in their square MELF packaging for high density mounting. The 1N5822US and 1N6864US are military qualified for high-reliability applications. "B" SQ-MELF (D-5B) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * * * * * * JEDEC registered surface mount equivalents of 1N5820 - 1N5822 and 1N6864 numbers. Hermetically sealed. Metallurgically bonded. Double plug construction. *JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/620 for 1N6822US and 1N6864US only. (See Part Nomenclature for all available options.) RoHS compliant devices available (commercial grade only on the 1N6822US and 1N6864US). Also available in: "B" Package (axial-leaded) 1N5820 - 1N5822, 1N6864 APPLICATIONS / BENEFITS * * Small size for high density mounting (see package illustration). Non-sensitive to ESD per MIL-STD-750 method 1020. o MAXIMUM RATINGS @ T A = +25 C unless otherwise noted. Parameters/Test Conditions Junction Temperature Storage Temperature Thermal Resistance Junction-to-End Cap o Surge Peak Forward Current @ T A = +25 C (Test pulse = 8.3 ms, half-sine wave.) o (1) Average Rectified Output Current @ T EC = +55 C Symbol Value Unit TJ T STG R JEC I FSM -65 to +125 -65 to +150 10 80 C C o C/W A (pk) IO 3 A o o NOTES: 1. See Figures 3 and 4 for derating curves and for effects of V R on T J . The maximum T J depends on the voltage applied. MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 Tel: (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0303-1, Rev. 1 (6/14/13) (c)2013 Microsemi Corporation Page 1 of 8 1N5820US - 1N5822US and 1N6864US MECHANICAL and PACKAGING * * * * * * CASE: Voidless hermetically sealed hard glass. TERMINALS: Tin-lead plate with >3% lead. Solder dip is available upon request. RoHS compliant matte-tin is available on commercial levels (no JAN levels). MARKING: Body painted and alpha numeric. POLARITY: Cathode indicated by band. Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE 1N5820US - 1N5821US 1N5820 US (e3) JEDEC type number See Electrical Characteristics table RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Surface Mount Package 1N5822US and 1N6864US only: JAN 1N5822 US (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Surface Mount Package JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol CT f IR IO Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. frequency Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. VR Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. V RWM T4-LDS-0303-1, Rev. 1 (6/14/13) (c)2013 Microsemi Corporation Page 2 of 8 1N5820US - 1N5822US and 1N6864US o ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise noted. TYPE NUMBER WORKING PEAK REVERSE VOLTAGE 1N5820US 1N5821US 1N5822US 1N6864US V RWM V (pk) 20 30 40 80 T4-LDS-0303-1, Rev. 1 (6/14/13) MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE V FM1 I FM = 1.0 A Volts 0.40 0.40 0.40 0.50 V FM2 I FM = 3.0 A Volts 0.50 0.50 0.50 0.70 V FM3 I FM = 9.4 A Volts 0.70 0.70 0.70 N/A (c)2013 Microsemi Corporation MAXIMUM REVERSE LEAKAGE CURRENT I RM @ V RM T J = +25 C mA 0.10 @ 20 V 0.10 @ 30 V 0.10 @ 40 V 0.15 @ 80 V T J = +100 C mA 12.5 @ 20 V 12.5 @ 30 V 12.5 @ 40 V 18.0 @ 80 V Page 3 of 8 1N5820US - 1N5822US and 1N6864US IR, Reverse Current (mA) GRAPHS T J , Junction Temperature (C) IF, Forward Current, Instantaneous (Amps) FIGURE 1 Typical Reverse Leakage Current at Rated PIV (PULSED) V F , Forward Voltage, Instantaneous (Volts) FIGURE 2 Typical Forward Voltage T4-LDS-0303-1, Rev. 1 (6/14/13) (c)2013 Microsemi Corporation Page 4 of 8 1N5820US - 1N5822US and 1N6864US Sinewave Operation Maximum Io Rating (A) GRAPHS (continued) Sinewave Operation Maximum Io Rating (A) T EC , (C) (End Cap) FIGURE 3 Temperature Current Derating For 1N5822US T EC , (C) (End Cap) FIGURE 4 Temperature Current Derating For 1N6864US T4-LDS-0303-1, Rev. 1 (6/14/13) (c)2013 Microsemi Corporation Page 5 of 8 1N5820US - 1N5822US and 1N6864US IF(A) GRAPHS (continued) IF (A) V F (V) FIGURE 5 Schottky V F - I F Characteristics (Typical 1N5822US) V F (V) FIGURE 6 Schottky V F - I F Characteristics (Typical 1N6864US) T4-LDS-0303-1, Rev. 1 (6/14/13) (c)2013 Microsemi Corporation Page 6 of 8 1N5820US - 1N5822US and 1N6864US Thermal Resistance (C/W) GRAPHS (continued) Pad Area per Pad (in2) FIGURE 7 Thermal Resistance vs FR4 Pad Area Still Air with the PCB horizontal T4-LDS-0303-1, Rev. 1 (6/14/13) (c)2013 Microsemi Corporation Page 7 of 8 1N5820US - 1N5822US and 1N6864US PACKAGE DIMENSIONS BD ECT BL INCH MIN MAX 0.137 0.148 0.019 0.028 0.200 0.225 MILLIMETERS MIN MAX 3.48 3.76 0.48 0.71 5.08 5.72 S 0.003 MIN. 0.08 MIN. DIM NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Dimensions are pre-solder dip. 3. U-suffix parts are structurally identical to the US-suffix parts. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0303-1, Rev. 1 (6/14/13) (c)2013 Microsemi Corporation Page 8 of 8