Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
ICM Pulsed Collector Current 32 A
ILM Clamped Inductive Load Current 32
IF @ TC = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 32
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)
IRG4BC20KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
Short Circuit Rated
UltraFast IGBT
8/11/04
Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard D2Pak package
Benefits
Latest generation 4 IGBT's offer highest power
density motor controls possible.
HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
For hints see design tip 97003.
PD -95677
Absolute Maximum Ratings
W
2
D Pak
Parameter Typ. Max. Units
RθJC Junction-to-Case - IGBT 2.1
RθJC Junction-to-Case - Diode 2.5
RθCS Case-to-Sink, Flat, Greased Surface 0.5 °C/W
RθJA Junction-to-Ambient ( PCB Mounted,steady-state) 40
Wt Weight 1.44 g
Thermal Resistance
Lead-Free
IRG4BC20KD-SPbF
Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) 34 51 IC = 9.0A
Qge Gate - Emitter Charge (turn-on) 4.9 7.4 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) 14 21 VGE = 15V
td(on) Turn-On Delay Time 54
trRise Time 34 TJ = 25°C
td(off) Turn-Off Delay Time 180 270 IC = 9.0A, VCC = 480V
tfFall Time 72 110 VGE = 15V, RG = 50Ω
Eon Turn-On Switching Loss 0.34 Energy losses include "tail"
Eoff Turn-Off Switching Loss 0.30 mJ and diode reverse recovery
Ets Total Switching Loss 0.64 0.96 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω , VCPK < 500V
td(on) Turn-On Delay Time 51 TJ = 150°C, See Fig. 11,14
trRise Time 37 IC = 9.0A, VCC = 480V
td(off) Turn-Off Delay Time 220 VGE = 15V, RG = 50Ω
tfFall Time 160 Energy losses include "tail"
Ets Total Switching Loss 0.85 mJ and diode reverse recovery
LEInternal Emitter Inductance 7.5 nH Measured 5mm from package
Cies Input Capacitance 450 VGE = 0V
Coes Output Capacitance 61 pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance 14 = 1.0MHz
trr Diode Reverse Recovery Time 37 55 ns TJ = 25°C See Fig.
5590 T
J = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current 3.5 5.0 A TJ = 25°C See Fig.
4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge 65 138 nC TJ = 25°C See Fig.
124 360 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery 240 A/µs TJ = 25°C See Fig.
During tb 210 TJ = 125°C 17
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage600 V VGE = 0V, IC = 250µA
∆V(BR)CES/∆T
JTemperature Coeff. of Breakdown Voltage 0.49 V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage 2.27 2.8 IC = 9.0A VGE = 15V
3.01 V IC = 16A See Fig. 2, 5
2.43 IC = 9.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage -10 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 2.9 4.3 S VCE = 100V, IC = 9.0A
ICES Zero Gate Voltage Collector Current 250 µA VGE = 0V, VCE = 600V
1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop 1.4 1.7 V IC = 8.0A See Fig. 13
1.3 1.6 IC = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
IRG4BC20KD-SPbF
0.1 1 10 100
0.0
0.5
1.0
1.5
2.0
2.5
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
For both:
Duty cycle: 50%
T = 125°C
T = 90°C
Gate drive as specified
sink
J
Power Dissipation = W
60% of rated
voltage
I
Ideal diodes
Square wave:
1.8
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 C
Jo
T = 150 C
Jo
1
10
100
510 15 20
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
Jo
T = 150 C
Jo
55°C
IRG4BC20KD-SPbF
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A4.5
C
I = A9
C
I = A18
C
25 50 75 100 125 150
0
5
10
15
20
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
9.0A
IRG4BC20KD-SPbF
010 20 30 40 50
0.5
0.6
0.7
0.8
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 9.0A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 9.0A
CC
C
1 10 100
0
200
400
600
800
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
RG , Gate Resistance ( Ω )
-60 -40 -20 020 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
18
C
I = A
9
C
I = A
4.5
C
50Ω
9.0A
IRG4BC20KD-SPbF
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
0.1
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
04812 16 20
0.0
1.0
2.0
3.0
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
50Ω
IRG4BC20KD-SPbF
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
0
100
200
300
400
500
100 1000
f
di /dt - (A/µs)
RR
Q - (nC)
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
10000
100 1000
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
20
40
60
80
100
100 1000
f
di /dt - (A/µs)
t - (ns)
rr
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
100 1000
f
di /dt - (A/µs)
I - (A)
IRRM
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
IRG4BC20KD-SPbF
Same type
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
Ic
Vce
t1 t2
90% Ic
10% Vce
td(off) tf
Ic
5% Ic
t1+5µS
Vce ic dt
90% Vge
+Vge
∫
Eoff =
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
RECOVERY ENERGY
tx
Eon =
∫
Erec =
t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qrr =
trr
tx
id dt
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
Vce Ic dt
IRG4BC20KD-SPbF
N ote: "P " in as s embly line
pos itio n indicates "L ead-F r ee"
F530S
T H IS IS AN IR F 530S WIT H
LOT CODE 8024
AS S E MB LE D ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
IN T E R NAT IONAL
R E CT IF IE R
LOGO
PART NUMBER
DAT E CODE
YE AR 0 = 2000
WEEK 02
LINE L
OR
F 530S
A = ASSEMBLY SITE CODE
WEEK 02
P = DES IGNATE S LEAD-FREE
PRODUCT (OPTIONAL)
RECTIFIER
IN T E R N AT ION AL
LOGO
LOT CODE
AS S E M B L Y
YEAR 0 = 2000
DATE CODE
PART NUMBER
D2Pak Part Marking Information (Lead-Free)
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRG4BC20KD-SPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
