NJG1127HB6 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION The NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has LNA bypasses function, and high gain mode or low gain mode can be selected. High IIP3 and a low noise are achieved at the High gain mode. And low current consumption can be achieved at the low gain mode because LNA enters the state of the standby. A small and thin package of USB8-B6 is adopted. !PACKAGE OUTLINE NJG1127HB6 ! FEATURES "Low operation voltage "Low control voltage +2.8V typ. +1.85V typ. [LNA high gain mode] "High Input IP3 "Low noise figure +11dBm typ. 1.4dB typ. @ f=880MHz @ f=880MHz [LNA low gain mode] "Low current consumption "High Input IP3 15uA typ. +19dBm typ. @ f=880MHz "Small & thin package USB8-B6 (Package size: 1.5mm x1.5mm x 0.55mm typ.) ! PIN CONFIGURATION (Top View) 4 3 5 6 Bias Circuit 2 7 Logic Circuit 1 Pin Connection 1.VINV 2.GND 3.RF OUT 4.GND 5.RF IN 6.GND 7. VCTL 8. GND 8 1 Pin INDEX Note: Specifications and description listed in this catalog are subject to change without prior notice. Ver.2008-12-15 -1- NJG1127HB6 !ABSOLUTE MAXIMUM RATINGS (Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage VDD 5.0 V Inverter supply voltage VINV 5.0 V Control voltage VCTL 5.0 V Input power Pin +15 dBm Power dissipation PD 160 mW Operating temperature Topr -40~+85 C Storage temperature Tstg -55~+150 C on PCB board, Tjmax=150C !ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS) (General Conditions: VDD=VINV=2.8V, Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage VDD 2.65 2.80 2.95 V Inverter supply voltage VINV 2.65 2.80 2.95 V Control voltage (High) VCTL(H) 1.80 1.85 VDD+0.3 V Control voltage (Low) VCTL(L) 0 0 0.3 V Operating current1 (LNA High Gain Mode) Operating current2 (LNA Low Gain Mode) Inverter current1 (LNA High Gain Mode) Inverter current2 (LNA Low Gain Mode) Control current -2- IDD1 RF OFF, VCTL=1.85V - 10.0 16.0 mA IDD2 RFOFF, VCTL=0V - 1 5 uA IINV1 RF OFF, VCTL=1.85V - 150 240 uA IINV2 RF OFF, VCTL=0V - 15 40 uA ICTL RF OFF, VCTL=1.85V - 5 15 uA NJG1127HB6 !ELECTRICAL CHARACTERISTICS 2 (LNA High Gain Mode) (General Conditions: VDD=VINV=2.8V, VCTL=1.85V, fRF=880MHz, Ta=+25C, Zs=Zl=50, with application circuit) PARAMETERS Small signal gain1 Noise figure1 1dB gain compression output power1 3rd order Input Intercept Point1 SYMBOL CONDITIONS Gain1 NF1 Exclude PCB & connector losses (IN: 0.04dB) P-1dB_1 IIP3_1 f1=fRF, f2=fRF+100kHz, Pin=-25dBm MIN TYP MAX UNITS 13.5 15.0 17.0 dB - 1.4 1.8 dB +4 +9 - dBm +8 +11 - dBm RF IN VSWR1 VSWRi _1 - 1.5 2.0 RF OUT VSWR1 VSWRo_1 - 1.5 2.0 !ELECTRICAL CHARACTERISTICS 2 (LNA Low Gain Mode) (General Conditions: VDD=VINV=2.8V, VCTL=0V, fRF=880MHz, Ta=+25C, Zs=Zl=50, with application circuit) PARAMETERS Small signal gain2 Noise figure2 1dB gain compression output power2 3rd order Input Intercept Point2 SYMBOL CONDITIONS Gain2 NF2 Exclude PCB & connector losses (IN: 0.04dB) P-1dB_2 IIP3_2 f1=fRF, f2=fRF+100kHz, Pin=-12dBm MIN TYP MAX UNITS -4.0 -2.5 0 dB - 2.5 5.0 dB +1 +8 - dBm +15 +19 - dBm RF IN VSWR2 VSWRi _2 - 2.3 2.7 RF OUT VSWR2 VSWRo_2 - 1.8 2.1 -3- NJG1127HB6 !TERMINAL INFOMATION No. SYMBOL DESCRIPTION 1 VINV Supply voltage terminal for internal logic circuit (inverter). Please place a bypass capacitor between this and GND for avoiding RF noise from outside. 2 GND Ground terminal. RF signal comes out from this terminal, and goes through an external matching circuit connected to this. Inductor L3 as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA. Capacitor C2 as shown in the application circuit is a bypass capacitor. 3 RFOUT 4 GND Ground terminal. 5 RFIN RF input terminal. The RF signal is input through external matching circuit connected to this terminal. A DC blocking capacitor is not required. 6 GND Ground terminal. 7 VCTL Control port. A logic control signal is required to select High or Low gain mode of LNA. This terminal is set to more than +1.5V of logical high level for High gain mode of LNA, and set to 0~+0.3V of logical low level for Low gain mode. 8 GND Ground terminal. CAUTION 1) Ground terminal (No.2, 4, 6, 8) should be connected to the ground plane as close as possible for excellent RF performance, because distance to GND makes parasitic inductance. ! TRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) -4- VCTL Gain Mode LNA L Low bypass H High pass NJG1127HB6 !ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50, with application circuit) Pout vs. Pin Gain, IDD vs. Pin (f=880M Hz) (f=880M Hz) 20 16 20 P-1dBout=+9 .2Bm Gain (dB) Pout (dBm ) 0 Pout -10 15 14 10 12 10 5 G ain 1dB C om pression Line ID D (m A) Gain 10 -20 ID D P-1dBin= -5.0dBm -30 -4 0 P-1dBin= -5.0dBm 8 0 -30 -2 0 -10 0 10 -4 0 -30 Pin (dBm) -10 0 10 Pin (dBm ) P out, IM 3 vs. Pin OIP3, IIP3 vs. frequency (f1 =860~9 10M Hz, f2=f1+10 0kHz, Pin=-2 5dBm ) (f1= 880 MH z, f2=f1+1 00k Hz) 40 -20 30 17 29 16 28 15 O IP3 =+2 5.7dBm Pout -20 -40 14 27 OIP 3 13 26 12 25 IIP3 (dBm) 0 OIP3 (dBm ) Pout, IM 3 (dBm ) 20 IIP3 24 11 23 10 -60 IM 3 IIP3 =+10.4dBm -80 -30 -2 0 -10 0 10 22 860 20 870 880 890 90 0 9 910 frequency (MHz) Pin (dBm ) NF, G ain vs. frequency (f=750 ~10 00M Hz) 4.0 18 3.5 17 16 3.0 2.5 15 2.0 14 13 1.5 Gain (dB) NF (dB) Ga in NF 1.0 12 0.5 11 0.0 750 80 0 850 90 0 950 10 1000 frequency (M Hz) -5- NJG1127HB6 !ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50, with application circuit) S11, S22 Zin, Zout VSWR S21, S12 S11, S22 (~20GHz) -6- S21, S12 (~20GHz) NJG1127HB6 !ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50, with application circuit) Gain, NF vs. V DD , V INV P-1dB(OUT) vs. V DD , V INV 1 3.0 18 3.5 1 2.0 17 3.0 16 2.5 Gain 15 2.0 14 1.5 NF 13 12 11 2.6 2.8 3.0 3.2 3.4 (f=880M Hz) 1 1.0 1 0.0 P -1dB(O UT) 9.0 8.0 1.0 7.0 0.5 6.0 0.0 5.0 2.4 3.6 2.6 OIP3, IIP3 vs. VDD , V INV 3.5 16 3.0 3.0 2.5 2.5 IIP 3 2.0 20 10 18 8 1.0 16 6 0.5 4 0.0 14 3.0 3.2 3.4 (f=8 80M Hz) 3.5 12 22 2.8 3.6 18 14 24 2.6 3.4 4.0 VSWRi OIP3 (dBm ) OIP3 2.4 3.2 20 IIP3 (dBm) 28 26 3.0 VS W Ri, VSW Ro vs. VDD , V INV (f1=880M Hz, f2 =f1+ 100kHz, Pin=-2 5dBm ) 30 2.8 V DD , V INV (V) V DD , V INV (V) 4.0 2.0 V SWRi 1.5 3.6 1.5 1.0 VS WRo 0.5 0.0 2.4 V DD , V INV (V) VSWRo 2.4 P-1dB(OUT) (dBm ) 4.0 NF (dB) Gain (dB) (f=880M Hz) 19 2.6 2.8 3.0 V DD , V INV 3.2 3.4 3.6 (V) IDD , IINV vs. V DD , V INV (RF OFF) 4.0 13 3.5 12 3.0 11 2.5 2.0 10 ID D 9 1.5 8 1.0 7 IINV (m A) IDD (m A) 14 0.5 I INV 0.0 6 2.4 2.6 2.8 V DD , 3.0 3.2 3.4 V INV (V) -7- NJG1127HB6 !ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50, with application circuit) P-1dB(OUT) vs. Tem perature Gain, NF vs. Tem perature (f=880M Hz) 18 17 4.0 14 3.5 12 3.0 15 2.5 14 2.0 NF 13 1.5 12 1.0 11 0.5 10 -40 -20 0 20 40 60 80 P-1dB(OUT) (dBm) 16 NF (dB) Gain (dB) Gain (f=880M Hz) 10 P-1dB(O UT) 8 6 4 2 0 -40 0.0 100 -20 0 OIP3, IIP3 vs. Tem perature (f1=880M Hz, f2=f1+ 100kHz, Pin=-25dBm ) 29 20 40 60 80 10 0 Temp erature ( o C) Temp erature ( o C) VSW Ri, VSW Ro vs. Tem perature (f=8 80M Hz) 4.0 12 3.5 11 3.0 27 10 26 9 25 8 OIP 3 IIP3 (dBm ) OIP3 (dBm ) IIP3 VSW Ri, VSW Ro 28 2.5 2.0 V SW Ri 1.5 1.0 7 24 23 -4 0 -20 0 20 40 60 80 Temp erature ( o C) V S WRo 0.5 0.0 6 10 0 -40 -20 0 IDD vs. Tem perature 40 60 80 10 0 k-factor vs. Tem perature (RF OFF) 14 20 Temp erature ( o C) (f=100MHz~20G Hz) 20 12 ID D 15 k-factor ID D (m A) 10 8 6 10 o -40 C o -30 C o -10 C 4 5 o 0 C o +25 C o +40 C +85 o C 2 0 -40 0 -20 0 20 40 60 o Tem p erature ( C) -8- 80 10 0 0 5 10 frequency (GHz) 15 20 NJG1127HB6 !ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50, with application circuit) Gain, IDD vs. Pin P out vs. Pin 20 -2 10 Gain (dB) P-1dBout=+ 7.8dBm 0 Pout (dBm ) (f=880M Hz) -1 -10 -20 Pout 2.0 1.8 Gain -3 1.5 -4 1.3 -5 1.0 -6 0.8 -7 0.5 ID D (u A) (f=880M Hz) -30 G ain 1d B C om press ion Line -8 0.3 P -1dBin=+10.8dBm P-1dBin=+1 1.5dBm -50 -4 0 -9 -30 -20 -10 0 10 20 0.0 -40 -3 0 Pin (dBm ) 30 20 O IP3=+20.5dBm Pout OIP3 (dBm ) Pout, IM 3 (dBm ) -10 0 10 20 OIP3, IIP3 vs. frequency (f1= 880MH z, f2=f1+1 00k Hz) -20 -20 Pin (dBm) Pout, IM 3 vs. Pin 0 ID D -40 -60 (f1 =860~9 10M Hz, f2=f1 +10 0kHz, Pin=-1 2dBm ) 30 28 28 26 26 IIP 3 24 24 22 IIP3 (dBm ) -40 22 OIP 3 IM 3 20 -80 20 IIP3=+23.5dBm 18 -100 -30 -20 -1 0 0 10 20 30 86 0 Pin (dBm ) 18 870 880 89 0 900 91 0 frequency (M Hz) NF, Gain vs. frequency 1 7 0 6 -1 5 Gain 4 -2 -3 3 -4 Gain (dB) NF (dB) (f= 750~1000M Hz) 8 NF 2 -5 1 -6 0 750 -7 800 85 0 900 950 1000 frequency (MHz) -9- NJG1127HB6 !ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50, with application circuit) S11, S22 Zin, Zout VSWR S21, S12 S11, S22 (~20GHz) - 10 - S21, S12 (~20GHz) NJG1127HB6 !ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50, with application circuit) G ain, NF vs. V DD , V INV P-1dB(OUT) vs. V DD , V INV (f=880M Hz) 0.0 4.0 -0.5 3.5 -1.0 3.0 (f=880M Hz) 11 2.5 -2.0 2.0 -2.5 1.5 NF (dB) Gain (dB) NF -1.5 Gain -3.0 1.0 -3.5 0.5 P-1dB(O UT) (dBm ) 10 9 8 P-1dB(O UT) 7 -4.0 0.0 2.6 2.8 3.0 3.2 3.4 6 2.4 3.6 2.6 V DD , V INV (V) O IP3, IIP3 vs. VDD , V INV 3.2 3.4 3.6 VS WRi, VSW Ro vs. VDD , V INV IIP3 4.0 28 3.5 3.5 26 3.0 3.0 30 24 28 22 26 20 24 4.0 V S WRi 2.5 VSW Ri 32 (f=880M Hz) 30 IIP3 (dBm) 34 OIP3 (dBm ) 3.0 V DD , V INV (V) (f1=880M Hz, f2=f1 +10 0kHz, Pin=-12dBm ) 36 2.8 2.5 2.0 2.0 1.5 VSW Ro 2.4 1.5 V SWRo 18 1.0 1.0 16 0.5 0.5 14 0.0 OIP3 22 20 2.4 2.6 2.8 V DD , 3.0 V INV (V) 3.2 3.4 0.0 2.4 2.6 2.8 3.0 V DD , V INV 3.2 3.4 3.6 (V) IDD , IINV vs. V DD , V INV (RF OFF) 0.20 20 0.15 15 0.10 10 0.05 5 IINV (uA) IDD (u A) I INV ID D 0.00 0 2.4 2.6 2.8 V DD , 3.0 V INV (V) 3.2 3.4 - 11 - NJG1127HB6 !ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50, with application circuit) P-1dB(O UT) vs. Tem perature Gain, NF vs. Tem perature -1 -2 10 14 9 12 8 -3 7 -4 6 -5 5 -6 NF (dB) Gain (dB) Gain 4 P-1dB(OUT) (dBm ) (f=880M Hz) 0 (f=880M Hz) 10 8 6 P -1dB(OUT) 4 NF -7 2 3 -8 -40 -2 0 0 20 40 60 80 Tem p erature ( o C) 0 -40 2 100 OIP3, IIP3 vs. Tem perature -20 0 20 40 60 Tem perature ( o C) 80 10 0 VSW Ri, VSW Ro vs. Tem perature (f1=8 80M Hz, f2=f1+10 0kHz, Pin=-12dBm ) 28 28 26 26 24 24 (f=880M Hz) 4.0 3.5 IIP3 22 20 22 20 VSW Ri, VSW Ro OIP 3 IIP3 (dBm ) OIP3 (dBm ) 3.0 2.0 1.5 V SW Ro 18 18 16 16 0.5 14 10 0 0.0 14 -40 -20 0 20 40 60 80 VS WRi 2.5 1.0 -40 -20 0 IDD vs. Tem perature 40 60 80 10 0 k-factor vs. Tem perature (RF OFF) 10 20 Temp erature ( o C) Tem p erature ( o C) (f= 100 MHz~20G Hz) 20 8 6 k-factor ID D (uA) 15 10 4 o -40 C -30 o C o -10 C 5 o 2 0 C o +25 C o +40 C +85 o C ID D 0 -40 0 -20 0 20 40 o 60 Temp erature ( C) - 12 - 80 10 0 0 5 10 freque ncy (GHz) 15 20 NJG1127HB6 !APPLICATION CIRCUIT (Top View) 4 L2 12nH L3 12nH 3 5 RFIN C1 1000pF RFOUT L4 12nH L1 39nH Bias 6 2 Circuit VDD=2.8V C2 1000pF Logic VCTL=0V or 1.85V Circuit 7 VINV=2.8V 1 8 1 Pin INDEX !TEST PCB LAYOUT (Top View) Parts List Parts ID VDD L1~L4 RF IN C2 L4 L1 L2 VCTL L3 C1 VINV C1,C2 Notes TAIYO-YUDEN (HK1005 series) MURATA (GRM15 series) RF OUT PCB (FR-4) : t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50) PCB SIZE=17.0mm X 17.0mm - 13 - NJG1127HB6 !PACKAGE OUTLINE (USB8-B6) (TOP VIEW) (SIDE VIEW) 1pin INDEX 0.0380.01 0.140.05 0.550.05 1.50.05 0.50.1 0.50.1 :Au :FR5 :Epoxy resin :mm :4mg R0.075 0.20.1 3 0.30.05 8 4 0.20.1 TERMINAL TREAT PCB Molding material UNIT WEIGHT 2 0.30.1 1.50.05 1 7 6 5 0.20.05 0.20.05 0.40.1 (BOTTOM VIEW) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 14 - [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NJR: NJG1127HB6-TE1