Ver.2008-12-15
NJG1127HB6
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1
-
800MHz Band LNA GaAs MMIC
! GENERAL DESCRIPTION !PACKAGE OUTLINE
The NJG1127HB6 is a LNA IC de signed for 800MHz band CDMA2000 cellu lar
phone. This IC has LNA by passes function, and high gain mode or low gain
mode can be sele cted. High IIP3 and a low noise are achieved at the High gain
mode. And low current co nsumption can be achieved at the low gain mode
because LNA enters the st ate of the standby. A small and thin p ackage of
USB8-B6 is adopted.
! FEA TURES
"Low operation voltage +2.8V typ.
"Low control voltage +1.85V typ.
[LNA high ga in mode]
"High Input IP3 +11dBm typ. @ f=880MHz
"Low noise figure 1.4dB typ. @ f=880MHz
[LNA low gain mode]
"Low current consumption 15uA typ.
"High Input IP3 +19dBm typ. @ f=880MHz
"Small & thin p ackage USB8-B6 (Package size : 1.5mm x1.5mm x 0.55mm typ .)
! PIN CONFIGURA TION
Note: S pecifications and description listed in th is catalog are subject to change without prior notice .
NJG1127HB6
Pin Connection
1.VINV
2.GND
3.RF OUT
4.GND
5.RF IN
6.GND
7. VCTL
8. GND
1 Pin INDEX
(Top View)
Bias
Circuit
Logic
Circuit 1
3
5
8
7
6 2
4
NJG1127HB6
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2
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!ABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS SYMBOL CONDITIONS RATINGS UNITS
Supply voltage VDD 5.0 V
Inverter supply voltage VINV 5.0 V
Control voltage VCTL 5.0 V
Input power Pin +15 dBm
Power dissipation PD on PCB board, Tjmax=150°C 160 mW
Operating temperature Topr -40~+85 °C
S torage temperature Tstg -55~+150 °C
!ELECTRICAL CHARACTERISTIC S 1 (DC CHARACTERISTICS)
(General Conditions: VDD=VINV=2.8V, Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating voltage VDD 2.65 2.80 2.95 V
Inverter supply voltage VINV 2.65 2.80 2.95 V
Control voltage (High) VCTL(H) 1.80 1.85 VDD+0.3 V
Control voltage (Low) VCTL(L) 0 0 0.3 V
Operating current1
(LNA High Ga in Mode) IDD1 RF OFF, VCTL=1.85V - 10.0 16.0 mA
Operating current2
(LNA Low Gain Mode) IDD2 RFOFF, VCTL=0V - 1 5 uA
Inverter current1
(LNA High Ga in Mode) IINV1 RF OFF, VCTL=1.85V - 150 240 uA
Inverter current2
(LNA Low Gain Mode) IINV2 RF OFF, VCTL=0V - 15 40 uA
Control current ICTL RF OFF, VCTL=1.85V - 5 15 uA
NJG1127HB6
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3
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!ELECTRICAL CHARACTERISTIC S 2 (LNA High Gain Mode)
(General Conditions: VDD=VINV=2.8V, VCTL=1.85V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain1 Gain1 13.5 15.0 17.0 dB
Noise figure1 NF1 Exclude PCB & connector losses
(IN: 0.04dB) - 1.4 1.8 dB
1dB gain compression
output power1 P-1dB_1 +4 +9 - dBm
3rd order Input
Intercept Point 1 IIP3_1 f1=fRF, f2=fRF+100kHz,
Pin=-25dBm +8 +11 - dBm
RF IN VSWR1 VSWRi _1 - 1.5 2.0
RF OUT VSWR1 VSWRo_1 - 1.5 2.0
!ELECTRICAL CHARACTERISTICS 2 (LNA Lo w Gain Mode)
(General Conditions: VDD=VINV=2.8V, VCTL=0V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain2 Gain2 -4.0 -2.5 0 dB
Noise figure2 NF2 Exclude PCB & connector losses
(IN: 0.04dB) - 2.5 5.0 dB
1dB gain compression
output power2 P-1dB_2 +1 +8 - dBm
3rd order Input
Intercept Point 2 IIP3_2 f1=fRF, f2=fRF+100kHz,
Pin=-12dBm +15 +19 - dBm
RF IN VSWR2 VSWRi _2 - 2.3 2.7
RF OUT VSWR2 VSWRo_2 - 1.8 2.1
NJG1127HB6
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4
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!TERMINAL INFOMATION
CAUTION
1) Ground terminal (No.2, 4, 6, 8) should be connected to the ground plane as close as possible fo r
excellent RF performan ce, because distance to GND makes parasitic inductance .
! TRUTH T A BLE
“H”=VCTL(H), “L”=VCTL(L)
VCTL Gain Mode LNA
L Low bypass
H High pass
No. SYMBOL DESCRIPTION
1 VINV
Supply voltage terminal for internal logic circuit (inverter). Please place a bypass
capacitor between this and GND for avoiding RF noise from outside.
2 GND Ground terminal.
3 RFOUT
RF signal comes out from this terminal, and goes through an external matching circuit
connected to this. Inductor L3 as shown in the application circuit is a part of an external
matching circuit, and also provide DC power to LNA. Capacitor C2 as shown in the
application circuit is a bypass capa citor.
4 GND Ground terminal.
5 RFIN
RF input terminal. The RF signal is input through external matching circuit connected to
this terminal. A DC blo cking capacitor is not requ ired.
6 GND Ground terminal.
7 VCTL
Control port. A logic control signal is required to select High or Low gain mode of LNA.
This terminal is set to more than +1.5V of logical high level for High gain mode of LNA,
and set to 0~+0.3V of logical low level for Low gain mode.
8 GND Ground terminal.
NJG1127HB6
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5
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!ELECTRICAL CHARACTERISTIC S (LNA High Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
750 800 850 900 950 1000
10
11
12
13
14
15
16
17
18
Gain (dB)
freque n c y (MHz )
NF (dB)
Gain
N F , Ga in v s . fre q u e n c y
NF
(f=750~1000MHz)
-80
-60
-40
-20
0
20
40
-30 -20 -10 0 10 20
Pout, IM 3 (dBm )
Pin (dBm)
IIP3=+10.4dBm
Pout
Pout, IM3 v s . Pi n
IM3
OIP3=+25.7dBm
(f1=880 M Hz, f2 = f1+1 00k Hz )
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10
Pout vs. Pin
Pout (dBm )
Pin (dBm)
P-1dBout=+9.2Bm
G ain 1dB C om press ion Line
Pout
P-1dBin=-5.0dBm
(f=880MHz)
0
5
10
15
20
-40-30-20-10 0 10
8
10
12
14
16
IDD (mA)
Pin (dBm )
Gain (dB)
Gain
G a in , IDD vs. P in
IDD
P-1dBin=-5.0dBm
(f=880MHz)
22
23
24
25
26
27
28
29
30
860 870 880 890 900 9109
10
11
12
13
14
15
16
17
OIP3 (dBm)
frequency (M Hz)
IIP 3 (dB m)
OIP3
O I P 3 , II P 3 v s . fre q ue nc y
IIP3
(f1=860~910MHz, f2=f1+100kHz, Pin=-25dBm)
NJG1127HB6
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6
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!ELECTRICAL CHARACTERISTIC S (LNA High Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)
S11, S22
S21, S12
Zin, Zout
VSWR
S11, S22 (~20 GHz) S21, S12 (~20GHz)
NJG1127HB6
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7
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!ELECTRICAL CHARACTERISTIC S (LNA High Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
2.4 2.6 2.8 3.0 3.2 3.4 3.6
P-1dB(OUT) (dBm )
VDD, V INV (V )
P- 1d B(OUT ) v s. VDD, VINV
P-1dB(OUT)
(f=880MHz)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2.4 2.6 2.8 3.0 3.2 3.4 3.60.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VSWRi
VDD, V INV (V )
VSWRo
VSWRi
V SWRi, VSWR o v s. VDD, VINV
VSWRo
(f=880MHz)
14
16
18
20
22
24
26
28
30
2.4 2.6 2.8 3.0 3.2 3.4 3.64
6
8
10
12
14
16
18
20
OIP3 (dBm)
VDD, V INV (V )
IIP3 (d B m )
OIP3
O I P 3 , IIP3 v s . VDD, V INV
IIP3
(f1=88 0MH z, f2 = f1+ 100k Hz , Pin =-2 5dB m )
11
12
13
14
15
16
17
18
19
2.4 2.6 2.8 3.0 3.2 3.4 3.60.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gain (dB)
VDD, V INV (V )
NF (dB)
Gain
G a i n , N F vs . VDD, V INV
NF
(f=880MHz)
6
7
8
9
10
11
12
13
14
2.4 2.6 2.8 3.0 3.2 3.40.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IDD (mA)
VDD, VINV (V )
IINV (mA )
IDD
IDD, IINV v s. VDD, V INV
IINV
(RF O F F)
NJG1127HB6
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8
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!ELECTRICAL CHARACTERISTIC S (LNA High Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)
10
11
12
13
14
15
16
17
18
-40-200 20406080100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gain (dB)
Temp erature (oC)
NF (dB)
Gain
Gain, NF vs. Tem perature
NF
(f=880MHz)
0
2
4
6
8
10
12
14
-40-20 0 20 40 60 80100
Temperature (oC)
P-1dB(O UT) (dBm)
P-1dB(O U T) vs. Temperature
P-1dB(OUT)
(f=880MHz)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-40-200 20406080100
Temperature (oC)
VSWR i, VSWRo
V S WR i, V S WR o vs . T e mp e ra t ur e
VSWRi
VSWRo
(f=880MHz)
23
24
25
26
27
28
29
-40 -20 0 20 40 60 80 1006
7
8
9
10
11
12
OIP3 (dBm )
Temp erature (oC)
IIP3 (dB m )
OIP3
O IP 3 , IIP 3 v s. Te m p e ra tu re
IIP3
(f1=880MHz, f2=f1+100kH z, Pin= -25dBm)
0
2
4
6
8
10
12
14
-40 -20 0 20 40 60 80 100
Tem perature (oC)
IDD (mA)
IDD vs. Tem perature
IDD
(R F O F F)
0
5
10
15
20
0 5 10 15 20
fre q u ency (G H z )
k-factor
k-factor vs. Te mpe rature
-40oC
-30oC
-10oC
0oC
+25oC
+40oC
+85oC
(f=100MHz~20GHz)
NJG1127HB6
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9
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!ELECTRICAL CHARACTERISTICS (LNA Lo w Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)
-50
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10 20
P out vs. Pin
Pout (dBm )
Pin (dBm )
P-1dBin=+11.5dBm
Gain 1dB Com pression Line
Pout
P-1dBout=+7.8dBm
(f=880MHz)
-9
-8
-7
-6
-5
-4
-3
-2
-1
-40 -30 -20 -10 0 10 200.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
IDD (uA )
Pin (dBm )
Gain (dB)
Gain
Gain, IDD vs . P in
IDD
P-1dBin=+10.8dBm
(f=880MHz)
-100
-80
-60
-40
-20
0
20
-30 -20 -10 0 10 20 30
P o u t, IM3 (d Bm)
Pin (dBm )
IIP3=+23.5dBm
Pout
Po ut, IM3 v s. Pi n
IM3
OIP3=+20.5dBm
(f1= 880 M H z, f2= f1+1 00k Hz )
18
20
22
24
26
28
30
860870880890900910
18
20
22
24
26
28
30
OIP3 (dBm)
freq u e n c y (M H z )
IIP 3 (dB m)
OIP3
O I P 3 , II P 3 v s . fre q ue n c y
IIP3
(f1=860~910MHz, f2=f1+100kHz, Pin=-12dBm)
0
1
2
3
4
5
6
7
8
750 800 850 900 950 1000
-7
-6
-5
-4
-3
-2
-1
0
1
Gain (dB)
frequency (M Hz)
NF (dB)
Gain
N F , G ain v s . fre q ue nc y
NF
(f=750~1000MHz)
NJG1127HB6
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10
-
!ELECTRICAL CHARACTERISTICS (LNA Lo w Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)
S11, S22
S21, S12
Zin, Zout
VSWR
S11, S22 (~20 GHz) S21, S12 (~20GHz)
NJG1127HB6
-
11
-
!ELECTRICAL CHARACTERISTICS (LNA Lo w Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)
6
7
8
9
10
11
2.4 2.6 2.8 3.0 3.2 3.4 3.6
P-1dB(OUT) (dBm )
VDD, VINV (V )
P- 1d B(OUT) v s. VDD, V INV
P-1dB(OUT)
(f=880MHz)
0.00
0.05
0.10
0.15
0.20
2.4 2.6 2.8 3.0 3.2 3.40
5
10
15
20
IDD (uA)
VDD, V INV (V)
IINV (uA )
IDD
IDD, IINV v s . VDD, V INV
IINV
(RF O F F )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2.4 2.6 2.8 3.0 3.2 3.4 3.60.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VSWRi
VDD, V INV (V)
VSWRo
VSWRi
VSWRi, VSWR o vs. VDD, V INV
VSWRo
(f=880MHz)
20
22
24
26
28
30
32
34
36
2.4 2.6 2.8 3.0 3.2 3.414
16
18
20
22
24
26
28
30
OIP3 (dBm)
VDD, VINV (V )
IIP3 (dB m)
OIP3
OIP 3 , IIP 3 v s. VDD, VINV
IIP3
(f1=880MHz, f2=f1+100kHz, Pin =-12dB m)
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
2.4 2.6 2.8 3.0 3.2 3.4 3.60.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gain (dB)
VDD, V INV (V)
NF (dB)
Gain
Gain , NF vs. VDD, V INV
NF
(f=880MHz)
NJG1127HB6
-
12
-
!ELECTRICAL CHARACTERISTICS (LNA Lo w Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)
-8
-7
-6
-5
-4
-3
-2
-1
0
-40 -20 0 20 40 60 80 1002
3
4
5
6
7
8
9
10
Gain (dB)
Temp erature (oC)
NF (dB)
Gain
G a i n , N F vs . T e mp e ra t u re
NF
(f=880MHz)
14
16
18
20
22
24
26
28
-40 -20 0 20 40 60 80 10014
16
18
20
22
24
26
28
OIP3 (dBm)
Temp erature (oC)
IIP3 (d B m )
OIP3
O I P 3 , II P 3 v s . T e mp e r a tu r e
IIP3
(f1=880MHz, f2=f1+100kHz, Pin=-12dBm)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-40-200 20406080100
Temperature (oC)
VSW Ri, VSW Ro
V S WR i, V S WR o vs . T e mp e ra t ur e
VSWRi
VSWRo
(f=880MHz)
0
2
4
6
8
10
-40 -20 0 20 40 60 80 100
Temperature (oC)
IDD (uA )
IDD vs. Tem perature
IDD
(R F O F F )
0
5
10
15
20
05101520
freq u en cy (G H z )
k-factor
k-factor vs. Temperature
-40oC
-30oC
-10oC
0oC
+25oC
+40oC
+85oC
(f=100MHz~20GHz)
0
2
4
6
8
10
12
14
-40-20 0 20 40 60 80100
Tem p erature (oC)
P-1dB(OUT) (dBm)
P-1dB(O UT) vs. Temperature
P-1dB(OUT)
(f=880MHz)
NJG1127HB6
-
13
-
!APPLICATION CIRCUIT
!TEST PCB LAYOUT
Parts ID Notes
L1~L4 TAIYO-YUDEN
(HK1005 series)
C1,C2 MURATA
(GRM15 series)
RF IN RF OUT
VDD
VCTL VINV
L1
L2
L4
L3 C1
C2
(Top View)
PCB (FR-4) :
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50Ω)
PCB SIZE=17.0mm X 17.0mm
Parts List
RFIN RFOUT
L1
39nH
L2
12nH L3
12nH
L4
12nH
C1
1000pF
C2
1000pF
VDD=2.8V
VCTL=0V or 1.85V VINV=2.8V
(Top View)
1 Pin INDEX
Bias
Circuit
Logic
Circuit 1
3
5
8
7
6 2
4
NJG1127HB6
-
14
-
0.038±0.01
1pin INDEX
0.4±0.1
(TOP VIEW) (SIDE VIEW)
1.5±0.05
0.2±0.050.2±0.05
0.3±0.1
0.2±0.1
0.2±0.1
0.5±0.1 0.5±0.1
1.5±0.05
R0.075
765
123
84
0.14±0.05
(BOTTOM VIEW)
0.3±0.05
0.55±0.05
!PACKAGE OUTLINE (USB8-B6)
TERMINAL TREAT :Au
PCB :FR5
Molding material :Epoxy resin
UNIT :mm
WEIGHT :4mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a h armful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this pro duct.
• Do NOT chemically make gas or powder with this product.
• T
o
waste this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
ou
r
countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care t
o
avoid these dama
g
es.
[CAUTION]
The specific ations on this dat abook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representativ e usages
of the product and not intended for the
guarant ee or permission of any right including
the industr ial rights.
