MJE182 - CENTRAL SEMICONDUCTOR

Supertex inc.

www.supertex.com

Doc.# DSFP - TP2520

C081413

TP2520

TP5CW W = Code for week sealed

= “Green” Packaging

Features

►Low threshold (-2.4V max.)

►High input impedance

►Low input capacitance (125pF max.)

►Fast switching speeds

►Low on-resistance

►Free from secondary breakdown

►Low input and output leakage

Applications

►Logic level interfaces - ideal for TTL and CMOS

►Solid state relays

►Battery operated systems

►Photo voltaic drives

►Analog switches

►General purpose line drivers

►Telecom switches

General Description

This low threshold enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Pin Conguration

Product Marking

TO-243AA (SOT-89)

GATE

SOURCE

DRAIN

P-Channel Enhancement-Mode

Vertical DMOS FET

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BVDSS

Drain-to-gate voltage BVDGS

Gate-to-source voltage ±20V

Operating and storage temperature -55OC to +150OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Ordering Information

Part Number Package Option Packing

TP2520N8-G TO-243AA (SOT-89) 2000/Reel

Product Summary

BVDSS/BVDGS

RDS(ON)

(max)

VGS(th)

(max)

ID(ON)

(min)

-200V 12Ω-2.4V -750mA

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Typical Thermal Resistance

Package θja

TO-243AA (SOT-89) 133OC/W Package may or may not include the following marks: Si or

2

Supertex inc.

www.supertex.com

Doc.# DSFP - TP2520

C081413

TP2520

Switching Waveforms and Test Circuit

90%

10%

90% 90%

10%

Pulse

Generator

VDD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

f

t

r

INPUT

R

GEN

INPUT

OUTPUT

0V

VDD

0V

-10V

Sym Parameter Min Typ Max Units Conditions

Electrical Characteristics (TA = 25°C unless otherwise specied)

BVDSS Drain-to-source breakdown voltage -200 - - V VGS = 0V, ID = -2.0mA

VGS(th) Gate threshold voltage -1.0 - -2.4 V VGS = VDS, ID= -1.0mA

∆VGS(th) Change in VGS(th) with temperature - - 4.5 mV/OC VGS = VDS, ID= -1.0mA

IGSS Gate body leakage - - -100 nA VGS = ± 20V, VDS = 0V

IDSS Zero gate voltage drain current -

- -10 μA VGS = 0V, VDS = Max Rating

--1.0 mA VDS = 0.8 Max Rating,

VGS = 0V, TA = 125°C

ID(ON) On-state drain current -0.25 -0.7 - AVGS = -4.5V, VDS = -25V

-0.75 -2.1 - VGS = -10V, VDS = -25V

RDS(ON)

Static drain-to-source on-state

resistance -10 15 ΩVGS = -4.5V, ID = -100mA

8.0 12 VGS = -10V, ID = -200mA

∆RDS(ON) Change in RDS(ON) with temperature - - 1.7 %/OC VGS = -10V, ID = -200mA

GFS Forward transconductance 100 250 - mmho VDS = -25V, ID = -200mA

CISS Input capacitance - 75 125

pF

VGS = 0V,

VDS = -25V,

f = 1.0 MHz

COSS Common source output capacitance - 20 85

CRSS Reverse transfer capacitance - 10 35

td(ON) Turn-on delay time - - 10

ns

VDD = -25V,

ID = -750mA,

RGEN = 25Ω

trRise time - - 15

td(OFF) Turn-off delay time - - 20

tfFall time - - 15

VSD Diode forward voltage drop - - -1.8 V VGS = 0V, ISD = -500mA

trr Reverse recovery time - 300 - ns VGS = 0V, ISD = -500mA

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Thermal Characteristics

Package ID

(continuous)†

ID

(pulsed)

Power Dissipation

@ TA = 25OCIDR

†IDRM

TO-243AA (SOT-89) -260mA -2.0A 1.6W -260mA -2.0A

† ID (continuous) is limited by max rated Tj .

‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.

3

Supertex inc.

www.supertex.com

Doc.# DSFP - TP2520

C081413

TP2520

Typical Performance Curves

Gate Drive Dynamic Characteristics

Q

G (nanocoulombs)

VGS(th) (normalized)

V

(th)

and R

DS

Variation with Temperature

On-Resistance vs. Drain Current

RDS(ON) (ohms)

BV

DSS

Variation with Temperature

BVDSS (normalized)

Transfer Characteristics

200

100

50

0

C (picofarads)

0 -10 -20 -30 -40

0 -2.0 -4.0 -6.0 -8.0 -10

-2.5

-2.0

-1.5

-1.0

-0.5

0

-50 0 50 100 150

1.1

1.0

0.9

50

40

30

20

10

0

1.2

1.1

1.0

0.9

0.8

-10

-8.0

-6.0

-4.0

-2.0

0

0 0.5 1.0 1.5 2.0 2.5

73pF

0 -0.5 -1.0 -1.5 -2.0 -2.5

f = 1MHz

200pF

2.5

2.0

1.5

1.0

0.5

0

V

(th)

@ 1.0mA

R

DS(ON)

@ -10V, -0.2A

Tj (OC) ID (amperes)

V

GS

= -10V

V

GS

= -4.5V

RDS(ON) (normalized)

VGS (volts)

V

DS

= -25V

T

A

= -55

O

C

25

O

C

125

O

C

ID (amperes)

V

DS

= -10V

VDS (volts)

VGS (volts)

C

ISS

C

OSS

C

RSS

Tj (OC)

V

DS

= -40V

-50 0 50 100 150

Capacitance vs. Drain-to-Source Voltage

4

Supertex inc.

www.supertex.com

Doc.# DSFP - TP2520

C081413

TP2520

Typical Performance Curves (cont.)

Output Characteristics

-2.5

-2.0

-1.5

-1.0

-0.5

0

Saturation Characteristics

-2.0

-1.6

-1.2

-0.8

-0.4

0

Maximum Rated Safe Operating Area

-1.0 -10 -100 -1000

-0.1

-1.0

-10

-0.01

Thermal Response Characteristics

Thermal Resistance (normalized)

1.0

0.8

0.6

0.4

0.2

0

0.001 0.01 0.1 1.0 10

Transconductance vs. Drain Current

1.0

0.8

0.6

0.4

0.2

0 0 -0.4 -0.8 -1.2 -1.6 -2.0

Power Dissipation vs. Ambient Temperature

0 25 50 75 100 125 150

2.0

1.0

0

0 -10 -20 -30 -40 -50

V

GS

= -10V

-4V

-3V

0 -2.0 -4.0 -6.0 -8.0 -10

-6V

-8V

-4V

-8V

T

A

= -55

O

C

TO-243AA (DC)

-3V

TO-243AA

VDS (volts) VDS (volts)

ID (amperes)

V

DS

= -25V

GFS (siemens)

PD (watts)

VDS (volts) tp (seconds)

ID (amperes)

TO-243AA (pulsed)

TA (OC)

ID (amperes)

TO-243AA

T

A

= 25

O

C

P

D

= 1.6W

ID (amperes)

V

GS

= -10V

25

O

C

125OC

T

A

= 25

O

C

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

5

TP2520

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP - TP2520

C081413

3-Lead TO-243AA (SOT-89) Package Outline (N8)

Symbol A b b1 C D D1 E E1 e e1 H L

Dimensions

(mm)

MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00†

1.50

BSC

3.00

BSC

3.94 0.73†

NOM-------- --

MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986.

† This dimension differs from the JEDEC drawing

Drawings not to scale.

Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.

b b1

D

D1

E H E1

C

A

1 2 3

e

e1

Top View Side View

L