AP3403GH/J Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Simple Drive Requirement Fast Switching BVDSS -30V RDS(ON) 200m ID - 10A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. S TO-252(H) The TO-252/TO-251 package is universally used for all commercialindustrial application. G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage 20 V ID@TA=25 Continuous Drain Current -10 A ID@TA=70 Continuous Drain Current -8.6 A 1 IDM Pulsed Drain Current -48 A PD@TA=25 Total Power Dissipation 36.7 W Linear Derating Factor 0.29 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-case Thermal Resistance Junction-case Max. 3.4 /W Rthj-amb Thermal Resistance Junction-ambient Max. 110 /W Data and specifications subject to change without notice 200505031 AP3403GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -30 - - V - -0.1 - V/ VGS=-10V, ID=-6A - - 200 m VGS=-4.5V, ID=-4A - - 400 m VDS=VGS, ID=-250uA -1 - -3 V VDS=-10V, ID=-6A - 2 - S VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=-6A - 3.8 - nC BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=-250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 1.6 - nC VDS=-15V - 6.7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-6A - 20.8 - ns td(off) Turn-off Delay Time RG=2,VGS=-10V - 14.9 - ns tf Fall Time RD=2.5 - 4.4 - ns Ciss Input Capacitance VGS=0V - 217 - pF Coss Output Capacitance VDS=-25V - 103 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 31 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.25A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-6A, VGS=0V, - 35 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 63 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. AP3403GH/J 12 10 o T C =25 C -10V -8.0V -6.0V 8 -ID , Drain Current (A) -ID , Drain Current (A) T C =150 o C -10V -8.0V -6.0V 10 8 -5.0V 6 4 V G =-4.0V -5.0V 6 4 V G =-4.0V 2 2 0 0 0 1 2 3 4 5 0 6 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 250 1.8 I D =-10A T c =25 I D =-10A V G = -10V Normalized R DS(ON) 1.6 200 RDS(ON) (m ) 1 -V DS , Drain-to-Source Voltage (V) 150 1.4 1.2 1 0.8 0.6 100 3 4 5 6 7 8 9 10 -50 11 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 100 3 10 T j =150 o C 1 -VGS(th) (V) -IS(A) 2 T j =25 o C 1 0 0 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) Fig5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP3403GH/J f=1.0MHz 14 1000 -VGS , Gate to Source Voltage (V) 12 I D =-10A V DS =-24V 10 Ciss C (pF) 8 6 100 Coss 4 Crss 2 0 10 0 2 4 6 8 10 12 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 1ms -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 10ms 10 100ms T c =25 o C Single Pulse DC DUTY=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 0.01 Duty factor = t/T Peak T j = PDM x Rthjc + TC Single Pulse 0.01 1 0.00001 1 10 0.0001 0.001 0.01 0.1 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance RD VDS D VDS TO THE OSCILLOSCOPE D TO THE OSCILLOSCOPE 0.5 x RATED VDS 0.5 x RATED VDS RG G G S VGS S -10 V 1 100 VGS -1~-3mA IG Fig11. Switching Time Circuit ID Fig 12. Gate Charge Circuit