Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Low Gate Charge BVDSS -30V
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▼ Simple Drive Requirement RDS(ON) 200mΩ
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▼ Fast Switching ID- 10A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-case Thermal Resistance Junction-case Max. 3.4 ℃/W
Rthj-amb Thermal Resistance Junction-ambient Max. 110 ℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
200505031
AP3403GH/J
Rating
- 30
± 20
-10
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current -8.6
Pulsed Drain Current1-48
36.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.29
Storage Temperature Range
Thermal Data Parameter
Total Power Dissipation
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-252/TO-251 package is universally used for all commercial-
industrial application.
G
D
S
GDSTO-252(H)
GD
STO-251(J)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-6A - - 200 mΩ
VGS=-4.5V, ID=-4A - - 400 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-6A - 2 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge2ID=-6A - 3.8 - nC
Qgs Gate-Source Charge VDS=-24V - 1.7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 1.6 - nC
td(on) Turn-on Delay Time2VDS=-15V - 6.7 - ns
trRise Time ID=-6A - 20.8 - ns
td(off) Turn-off Delay Time RG=2Ω,VGS=-10V - 14.9 - ns
tfFall Time RD=2.5Ω- 4.4 - ns
Ciss Input Capacitance VGS=0V - 217 - pF
Coss Output Capacitance VDS=-25V - 103 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 31 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-1.25A, VGS=0V - - -1.2 V
trr Reverse Recovery Time IS=-6A, VGS=0V, - 35 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 63 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
AP3403GH/J
± 20V ±100
AP3403GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
2
4
6
8
10
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150oC
VG=-4.0V
-6.0V
-8.0V
-10V
-5.0V
100
150
200
250
34567891011
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
I
D=-10A
Tc=25
℃
℃℃
℃
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG= -10V
ID=-10A
0
2
4
6
8
10
12
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC-10V
-8.0V
-6.0V
VG=-4.0V
-5.0V
0
0
1
10
100
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oC
Tj=150oC
0
1
2
3
-50 0 50 100 150
Tj, Junction Temperature ( oC)
-VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig11. Switching Time Circuit Fig 12. Gate Charge Circuit
AP3403GH/J
10
100
1000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.5 x RATED VDS
TO THE
OSCILLOSCOPE
D
G
S
VDS
VGS
ID
IG
-1~-3mA
0.5 x RATED VDS
TO THE
OSCILLOSCOPE
-10 V
D
G
S
VDS
VGS
RG
RD
0
2
4
6
8
10
12
14
0 2 4 6 8 10 12
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-10A
VDS =-24V
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
1
10
100
1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
Tc=25 oC
Single Pulse DC
1ms
10ms
100ms
