TOSHIBA TLN113 TOSHIBA INFRARED LED GaAs INFRARED EMITTER TLN113 INFRARED LED FOR PHOTO SENSOR Unit in mm OPTO-ELECTRONIC SWITCH ga0e08, TAPE, CARD READERS | z ROTARY ENCODER = DETECTION OF FDD (FLOPPY DISK DRIVE) 8 2- 0.6MAX +] Z i sl z High radiant intensity ns = Best suited for combination with Photo Transistor TPS613. MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Forward Current IF 40 mA F ac t Derati ( ): REFERENCE VALUE orward Current Derating > (Ta >25C) Alp/C 0.53 mA /C JEDEC _ Pulse Forward Current (Note) Ipp 400 mA EIAJ Reverse Voltage VR 5 Vv TOSHIBA 4-3G1 Operating Temperature Range Topr 20~75 C Weight : 0.08g (TYP.) Storage Temperature Range Tst 30~100 C : : PIN CONNECTION (Note) Pulse Width= 100s, Repetitive Frequency = 100Hz 1 5 1, ANODE 2, CATHODE OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN,| TYP, |MAX,| UNIT Forward Voltage VF Ip=10mA | 1.15 | 1.30 Vv Reverse Current IR VR=5V 10} pA Radiant Intensity (Note) Ip Ip=20mA 08 | 4.8 |mW/sr Radiant Power Po Ip=20mA 2.5 | mW Capacitance Cr VR=0, f=1MHz 30]; pF Peak Emission Wavelength AP Ip=20mA | 940} om Spectral Line Half Width AA Ip=20mA 50 | nm Half Value Angle ag Ip=20mA |+40]}/ (Note) Ip classification AB: 0.8~3.0mW/sr, BC: 1.25~4.8mW/sr, A : 0.8~2.0mW/sr B : 1.25~3.0mW/sr, C : 2.0~4.8mW/sr 961001EAC2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specitied operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-09-08 1/4 TOSHIBA TLN113 PRECAUTION Please be careful of the followings. 1. Soldering temperature : 260C MAX. Soldering time : 8s MAX. (Soldering portion of lead : above 2mm from the body of the device) 2, When the lead is formed, the lead shall be formed at a distance of 2mm from the body without leaving forming stress to the body of the device. Soldering shall be performed after lead forming. 961001EAC2' @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes ar toxi. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. Na license is granted oy implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-09-08 2/4 TOSHIBA TLN113 Ip Ta Ip - VE (TYP.) = < j es 5 fe ~ i 8 so Z 3 fe & oS . S a S a E = o a < 0 20 40 60 80 100120 06 0.8 1,0 1 14 16 AMBIENT TEMPERATURE Ta (C) FORWARD VOLTAGE Vr WW) AVF/ATa Ip Ipp VFP (TYP.) < a5 = BS E> e as ~ 4 | fe Pu a fe fe 5 El 3 o a g & o8 5 32 5 PULSE WIDTHS 10040 <i a REPETITIVE z5 a PREQUENCY =100Hz oY 2 Ta=25C 0.1 0.3 1 3 10 30 0.8 12 18 2.0 24 2.8 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vpp () WAVELENGTH CHARACTERISTIC In IF (TYP.) > Ip=20mA ie Ta=25C E my 7 & = 2 = a = a a] & 4 5 Fe eq PULSE WIDTH =1 00.8 = REPETITIVE % FREQUENCY = 100Hz Ta=25C 1 3 10 30 100 300 820 860 900 940 980 1026 1080 FORWARD CURRENT If (mA) WAVELENGTH A (nm) 1997-09-08 3/4 TOSHIBA TLN113 RADIATION PATTERN (TYP.) RELATIVE Ip Ta (TYP.) (Ta= 28C) CAAT ARSON RELATIVE RADIANT INTENSITY, ch 9 06 08 19 OL RELATIVE INTENSITY -400 -20 % 20 40 80 80 AMBIENT TEMPERATURE Ta (C) COUPLING CHARACTERISTIC WITH TPS613 5 _ r Ta=25C FI 3 ee Irp Pw o i = IN Tp=1.9mW /sr s ee I~ > 2 zy N = * = TPS613 Ny a i USING SAMPLE \ 22 a Ox 5 L=100A \ ES ee = t VOR=3V oe B og) * CE \ 4 3 E=0.1lmW / em? \ z 3S o a? Ce \ 5 1kHz_|_|200Hz d aL be NU s 1 3 5 10 30 50 100 g 5 102 3050100, 300500 Im 3.5 10m a < DISTANCE d (mm) PULSE WIDTH Py (s) 1997-09-08 4/4