1SS321
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS321
Low Voltage High Speed Switching
Low forward voltage : VF = 0.42V (typ.)
Low reverse current : IR = 500nA (max)
Small package : SC-59 (SOT-23MOD)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 12 V
Reverse voltage VR 10 V
Maximum (peak) forward current IFM 150 (*) mA
Average forward current IO 50 (*) mA
Surge current (10ms) IFSM 1000 (*) mA
Power dissipation P 150 mW
Junction temperature Tj 125 °C
Storage temperature Tstg 55125 °C
(*) Unit rating. Total rating = unit ra ting × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) IF = 1mA 0.32
VF (2) IF = 10mA 0.42
Forward voltage
VF (3) IF = 50mA 0.63 1.00
V
Reverse current IR VR = 10V 500
nA
Total capacitance CT VR = 0, f = 1MHz 3.2 4.5 pF
Marking
Unit: mm
JEDEC SOT23MOD
EIAJ SC59
TOSHIBA 13G1F
Weight: 0.012g
1SS321
2001-06-07
2
1SS321
2001-06-07
3
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000707EA
A
RESTRICTIONS ON PRODUCT USE