GMV1000 / GMV2100 / GMV5000 GigaMiteTM Surface Mount Varactor Diodes (R) TM RoHS Compliant DESCRIPTION KEY FEATURES This series of devices meets RoHS requirements per EU Directive 2002/95/EC. Low Parasitics LP = 0.5 nH Typical CP = 0.07 pF Typical Surface Mount design Broadband Performance Through 5 Ghz Available on Tape & Reel for Automated Pick & Place Assembly Small, SOD 323 Size Footprint www.MICROSEMI.com This series of surface mount diodes are specifically design for high volume surface mount applications. The GigaMite design is optimized for improved electrical and thermal performance over standard plastic package technology. Our patented dual orthogonal lead frame provides both exceptionally low thermal impedance and series inductance. Microsemi utilizes only the highest quality dielectric materials resulting in low loss tangent and physical stability even in harsh environments. The result is higher frequency coverage and greater stability than comparable plastic packages. RoHS Compliant 1 APPLICATIONS Microsemi Lowell offers a variety of Varactor diodes in the GigaMite package style. Their low internal series inductance makes these products well suited for VCOs and VVFs through 5 gHz. Choose GMV1981 for low voltage battery applications. GMV5007 offers state of the art frequency linearity. GMV2114, GMV2134, and GMV2154 offer smooth wide ratio 20V tuning. GMV1542 offers high Q performance for lowest phase noise and loss. APPLICATIONS/BENEFITS Frequency Linear VCO's Low Phase Noise VCO's Wide Bandwidth VCO's Voltage variable Filters Analog Phase Shifters VCXO's Performance through 5 gHz ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Rating Value Unit IR 100 nA Storage Temperature TSTG -55 to +125 C Operating Temperature TOP -55 to +125 C Maximum Leakage Current @80% of Rated VB IMPORTANT: 1 These devices are supplied with a matte tin finish suitable for RoHS compliant assembly. Specifications are subject to change. For the most current data vist: www.MICROSEMI.com These devices are ESD sensitive and must be handled using ESD precautions Copyright 2007 Rev: 2009-02-09 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GigaMiteTM Varactors Symbol GMV1000 / GMV2100 / GMV5000 GigaMiteTM Surface Mount Varactor Diodes (R) TM RoHS Compliant Low Voltage / High Sensitivity Varactors ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Model Number IR=10A GMV1981-GM1 CT(pF)1 CT(pF)1 CT(pF) CT(pF) Q2 @ VR=1V @ VR=2.5V @ VR=4V @ VR=8V (Min) (Min) (Min - Max) (Max) (Typ) (Min) 12 1.2 0.7 - 1.1 0.5 0.25 1200 www.MICROSEMI.com Vb(V) 20V FLTVAR GigaMite ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Model Number Q2 Vb(V) CT(pF)1 CT(pF)1 CT(pF) @-4V @-20V Ratio (Min) (Min) (Min - Max) (Max) CT0/CT20 (Typ) (Min) 22 2.5 0.9 - 1.3 0.5 13:1 1200 IR=10A GMV5007-GM1 @0V 20V HyperAbrupt GigaMite ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) CT(pF) @ VR=4V Ratio Q2 @ VR=20V (Min-Max) (Max) CT4/CT20 (Typ) (Min) 2.1 0.8 - 1.1 0.5 3.3 900 22 4.9 1.7 - 2.2 0.7 3.7 750 22 14 4.4 - 5.5 1.3 4.1 600 CT(pF)1 CT(pF)1 (Min) (Min) 22 GMV2134-GM1 GMV2154-GM1 Vb(V) Model Number GMV2114-GM1 IR=10A @ VR=0V 30V Abrupt Junction GigaMite ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Model Number CT(pF)1 (Min) (Min) 30 2.4 IR=10A @ VR=0V Q2 CT(pF) @ VR=4V @ VR=30V Ratio (Min-Max) (Max) CT0/CT30 (Typ) (Min) 1.0 - 1.3 0.75 3.4 3800 GigaMite Varactors GMV1542-GM1 CT(pF)1 Vb(V) 1. F = 1MHz. 2. V=4 V, F = 50 MHz Copyright 2007 Rev: 2009-02-09 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GMV1000 / GMV2100 / GMV5000 TM GigaMiteTM Surface Mount Varactor Diodes (R) RoHS Compliant PACKAGE STYLE GM1 www.MICROSEMI.com NOTES MECHANICAL Copyright 2007 Rev: 2009-02-09 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3