fiAAMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SD1047 transistor is designed for use in general purpose Power 2SD1047 amplifier, application FEATURES: Collector-Emitter Voltage 12 AMPERE Veeo= 140V(Min) POWER * DC Current Gain TRANASISTORS hFE= 60-200@I,.= 1.0A 140 VOLTS * Complement to 2SB817 100 WATTS MAXIMUM RATINGS Characteristic Symbol 2SD1047 Unit Collector-Emitter Voltage Voeo 140 Vv S gy Collector-Base Voltage Veso 160 V LEP Emitter-Base Voltage Veso 6.0 V TO-247(3P Collector Current - Continuous le 12 A (SP) - Peak lom 15 B tr = 9R0 o r Total Power Dissipation @T,, = 25C Pp 100 Ww r Derate above 25C 0.8 wrc 2 Ba As Th Operating and Storage Junction Ty. Tst C Temperature Range -55 to +150 wd N i" ot THERMAL CHARACTERISTICS ge : PIN 1.BASE Characteristic Symbol Max Unit 2 COLLECTOR Thermai Resistance Junction to Case R8jc 1.25 C/W S-EMITTER DIM MILLIMETERS MIN MAX A 20.63 | 22.38 +00 FIGURE -1 POWER DERATING B 45.38 16.20 Cc 4.90 2.70 ge 90 D 5.10 | 610 E 80 E | 1481 | 15.22 = 70 F | 11.72 | 12.84 S 60 G 420 | 450 H 182 | 2.46 F 0 | 292 | 323 2 40 J 089 | 153 & 30 K 5.26 5.66 3 20 L 18.50 21.50 a 10 M 468 5.36 oe 0 N 2.40 2.80 0 25 50 75 100 125 150 > 5 2 5 e To , TEMPERATURE(*C)2SD1047 NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage Vipr)cBo Vv (lg= 5.0 mA, I= 0) 160 Collector-Emitter Breakdown Voltage ViBRycEo Vv (ig= 5.0 mA, I,=9 ) 140 Emitter-Base Voltage VipRiEBo Vv ( !,= 5.0 mA, I,= 0) 6.0 Collector Cutoff Current loBo uA ( Veg= 80 V, Ie= 0 ) 100 Emitter Cutoff Current leBo uA ( Vep= 4.0 V, I,= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (Ig= 1.0 A, Veg= 5.0 V )* hFE(2) 60 200 (lg= 6.0 A, Vog= 5.0 V ) hFE 20 Collector-Emitter Saturation Voltage VecE(sat) Vv (1,=5.0A, I,p=0.5A) 2.5 Base-Emitter On Voltage VeE(on) V (Ig= 1.0 A, Vog= 5.0 V ) 1.5 SWITCHING CHARATERISTICS Turn-cn Time Voec= 20V,I_= 1.0A ton 0.3 us Storage Time laa -Igg= 100mA ts 7.0 us - PWe= 20Hs Fall Time tf 0.7 us (1) Pulse Test: Pulse Width =300): s,Duty Cycle = 2.0% * hHF(2) Classification: 60 D 120 100 E 200 | ACTIVE-REGION SAFE OPERATING AREA (SOA) _ There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ic-Voe limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typig=150 C:T is -Bonding Wire Limit variable depending on conditions. second breakdown eee ed pulse limits are valid for duty cycles to 10% provided at T .=25C (Single Pulse) TuenS150C,At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. lc , COLLECTOR CURRENT (Amp) 80 7.0 16 20 30 50 70 100 200 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS)2SD1047 NPN Se a le, COLLECTOR CURRENT (A) lc, COLLECTOR CURRENT (A) V VOLTAGE (VOLTS) Ic - Vee T.225C 8.0 6.0 4.0 2.0 0 10 20 30 40 Vee , COLLECTOR-EMITTER VOLTAGE (V) Ic - Vbe 7 Voe=5.0V 6 cE 7 5 7 / V S 0 9 02 0.4 06 08 1 12 14 16 Vee, BASE - EMITTER VOLTAGE (V) "ON" VOLTAGES Vee (set) @ leflg=10 Voksen) @ Ielp=10 0.5 1.0 20 IC , COLLECTOR CURRENT (AMP) fr, TRANSITION FREQUENCY (MHz) hre , OC CURRENT GAIN C,CAPACITANCE(pF) DC CURRENT GAIN 0.1 02 0.5 4.0 2.0 5.0 10 20 Ic , COLLECTOR CURRENT (AMP) fy - Ie COMMON EMITTER T=25C Voe=5V 04 0.2 05 1.6 2.0 5.0 10 lc, COLLECTOR CURRENT (A) CAPACITANCES 30 1.0 2.0 5.0 10 20 50 100 Vr, REVERSE VOLTAGE(VOLTS)