KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com Vishay General Semiconductor
Revision: 14-May-14 1Document Number: 88656
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single-Phase Bridge Rectifier
FEATURES
UL recognition, file number E54214
Ideal for printed circuit boards
High surge current capability
High case dielectric strength of 1500 VRMS
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, SMPS, adapter, audio equipment,
and home appliances applications.
MECHANICAL DATA
Case: KBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1) Units mounted on a 2.0" x 1.6" x 0.3" thick (5 cm x 4 cm x 0.8 cm) aluminum plate
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
PRIMARY CHARACTERISTICS
Package KBU
IF(AV) 4 A
VRRM 50 V, 100, V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM 200 A
IR5 μA
VF at IF = 4 A 1.0 V
TJ max. 150 °C
Diode variations In-Line
Case Style KBU
~~
~
~
e4
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBU4A KBU4B KBU4D KBU4G KBU4J KBU4K KBU4M UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward
rectified output current at
TC = 100 °C (1)
IF(AV) 4.0 A
TA = 30 °C (2) 4.0
Peak forward surge current single sine-wave
superimposed on rated load IFSM 200 A
Operating junction and storage temperature range TJ, TSTG - 50 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL KBU4A KBU4B KBU4D KBU4G KBU4J KBU4K KBU4M UNIT
Maximum instantaneous
forward drop per diode IF = 4.0 A VF 1.0 V
Maximum DC reverse
current at rated DC blocking
voltage per diode
TA = 25 °C
IR
5.0 μA
TA = 125 °C 1.0 mA
KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com Vishay General Semiconductor
Revision: 14-May-14 2Document Number: 88656
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Units mounted on a 2.0" x 1.6" x 0.3" thick (5 cm x 4 cm x 0.8 cm) aluminum plate
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBU4A KBU4B KBU4D KBU4G KBU4J KBU4K KBU4M UNIT
Typical thermal resistance RJA 19 (2)
°C/W
RJL 4.0 (1)
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
KBU4J-E4/51 8.0 51 250 Anti-static PVC tray
050 100 150
0
1
2
3
4
Heatsink Mounting,
TC, 2.0 x 1.6 x 3.0"
(5.0 x 4.0 x 0.8 cm)
Al. Plate
TA, PCB Mounting
0.47" x 0.47" (12 x 12 mm)
Copper Pads
60 Hz
Resistive or
Inductive Load
Temperature (°C)
Average Forward Current (A)
110 100
25
50
75
100
125
150
175
200
T
J
= 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.6 0.7
100
10
1
0.1
0.80.9 1.0 1.1 1.2 1.3
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
020 40 60 80100
0.01
0.1
1
10
50
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com Vishay General Semiconductor
Revision: 14-May-14 3Document Number: 88656
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1 110 100
0
25
50
75
100
150
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.160 (4.1)
0.065 (1.7)
0.185 (4.7)
0.895 (22.7)
0.935 (23.7)
0.140 (3.6) 0.165 (4.2)
0.085 (2.2)
0.240 (6.09)
0.200 (5.08)
0.220 (5.6)
0.180 (4.6)
0.075 (1.9) R TYP. (2 Places)
45°
0.205 (5.2)
0.185 (4.7)
0.052 (1.3)
0.048(1.2)
0.280 (7.1)
0.260 (6.6)
DIA.
0.760
(19.3)
MAX.
0.700
(17.8)
0.660
(16.8)
1.0
(25.4)
MIN.
0.455 (11.3)
0.405 (10.3)
Case Style KBU
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Revision: 08-Feb-17 1Document Number: 91000
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