2SC5103F5 Transistor, NPN Features * available in CPT F5 (SC-63) package * package marking: C5103%*Q, where * is Nee code and Q is lot number high-speed switching, typically t =0.1 us for Ic=3A low collector saturation voltage, Dimensions (Units : mm) 2SC5103F5 (CPT F5) 65+02 CO. n 5 40.2 $1 4 21 / a a 4 40.2 235 05*01 4 95205 2 , Ty A 0.85 2 0.1 ll: 4 typically Veg;saty = 0.5 V for er fh pal fl Ic/Ip = 3 A/0.15 055-906 . . 2.3202/2.3 + 0.2 10402 wide safe operating area (SOA) Trt Poimax) = | W for Tg = 25C and ant (1) Base 0 oa a (2) Collector Poimax) = 10 W for Tg = 25C (3) Emitter Applications high speed switching applications Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vcgo 100 Vv Collector-to-emitter voltage Vceo 60 V Emitter-to-base voltage VeBo 5 Vv 5 DC Collector current Ic A 10 Pulse 1.0 Collector dissipation Po W 10 To = 25C Junction temperature T; 150 C Storage temperature Tstg 55 ~ +150 C Surface Mount Transistors ROHM 223 3.0 a EO 2.32.3 2SC5103F5 Transistor, NPN, 2SC series Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbo!| Min |Typical; Max Unit Conditions Collector-to-base _ breakdown voltage BVcpo | 100 Vi |lc =50 HA vise Veeoisus)) 60 V |ig/lg =3 40.3 A,L=1mH Collector-to-emitter _ breakdown voltage BVceo | 60 Vi flc=1 mA Emitter-to-base = breakdown voltage BVeso 5 Vi fle =50 HA Collector cutoff current IcBo 10 vA |Veg = 100 V Emitter cutoff current leBo 10 HA |Veg=5V 82 150 270 Vop=2V, IG=1A DC current gain hee 40 Vce=2V, Ic =3A Collector-to-emitter v 0.3 V Io/lg = 3 A/O.IS5 A saturation voltage CE(sat) 05 Io/lg =4 A0.2 A Base-to-emitter saturation 1.2 Ic/lg = 3 A/0.15 A VBE(sat) V voltage 1.5 Ic/lg = 4 A/0.2 A Transition frequency fr 120 MHz [Vce = 10 V, Ie =-0.5 A, f = 30 MHz Collector output _ _ _ capacitance Cob 80 pF Veg = 10V, IE=0A,f= 1 MHz Turn on time ton 0.3 ys 3A R