Power Transistors
1
Publication date: April 2003 SJD00080BED
2SB1504
Silicon PNP epitaxial planar type darlington
For power switching
•High forward current transfer ratio hFE
•High-speed switching
•Allowing automatic insertion with radial taping
■Absolute Maximum Ratings Ta = 25°C
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank P Q R
hFE1 1
000 to 2
500 2
000 to 5
000 4
000 to 10
000
Internal Connection
B
C
E
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2 2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
1
0.8 C 23
0.4±0.1
4.5±0.2
0.8 C 0.8 C
3.8±0.2
16.0±1.0 10.8±0.2
2.05±0.2
90˚
2.5±0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −50 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−8A
Peak collector current ICP −12 A
Collector power dissipation PC1.5 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −30 mA, IB = 0 −50 V
Collector-base cutoff current (Emitter open)
ICBO VCB = −50 V, IE = 0 −100 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = −7 V, IC = 0 −2mA
Forward current transfer ratio hFE1 *VCE = −3 V, IC = −4 A 1
000 10
000
hFE2 VCE = −3 V, IC = −8 A 500
Collector-emitter saturation voltage VCE(sat) IC = −4 A, IB = −8 mA −1.5 V
Base-emitter saturation voltage VBE(sat) IC = −4 A, IB = −8 mA −2.0 V
Transition frequency fTVCB = −10 V, IE = 0.5 A, f = 200 MHz 20 MHz
Turn-on time ton IC = −4 A, IB1 = −8 mA, IB2 = 8 mA 0.5 µs
Storage time tstg VCC = −50 V 2.0 µs
Fall time tf1.0 µs
2SB1504
2SJD00080BED
PC TaIC VCE VCE(sat) IC
VBE(sat) IChFE ICCob VCB
Safe operation area Rth t
0 16040 12080
0
0.4
0.8
1.2
1.6
2.0
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
Without heat sink
0
−2
−6
−4
−8
0−5−1−2−4−3
I
B
=–2.0mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
TC=25˚C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
− 0.1
−1
−10
−100
− 0.1 −1−10
IC/IB=500
T
C
=100˚C
–25˚C
25˚C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
− 0.1
− 0.1 −1−10
−10
−1
−100
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
IC/IB=500
TC=–25˚C
25˚C
100˚C
− 0.1 −1−10
102
103
104
105
Forward current transfer ratio hFE
Collector current IC (A)
V
CE
=–3V
T
C
=100˚C 25˚C
–25˚C
− 0.1 −1−10 −100
1
10
102
103
104
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
Collector-base voltage V
CB
(V)
IE=0
f=1MHz
TC=25˚C
− 0.01
−1
− 0.1
−1
−10
−100
−10 −100
−1
000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
Non repetitive pulse
T
C
=25˚C
t=10ms
t=1ms
I
CP
I
C
t=300ms
10−1
1
10
102
104
103
10−4104
103
102
10110−1
10−2
10−3
Time t (s)
Thermal resistance R
th
(°C/W)
Without heat sink
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
