SIGC08T60S - Infineon Technologies

SIGC08T60S

Edited by INFINEON Technologies AI PS DD CLS, L7531D, Edition 2, 26.01.2005

IGBT3 Chip

This chip is used for:

• power module

• discrete components

FEATURES:

• 600V Trench & Field Stop technology

• low VCE(sat)

• low turn-off losses

• short tail current

• positive temperature coefficient

• easy paralleling

Applications:

• drives

• white goods

• resonant applications

Chip Type VCE ICn Die Size Package Ordering Code

SIGC08T60S 600V 15A 2.86 x 2.82 mm2 sawn on foil Q67050-

A4395-A101

MECHANICAL PARAMETER:

Raster size 2.86 x 2.82

Emitter pad size 2.014 x 2.014

Gate pad size 0.361 x 0.513

mm2

Area total / active 8.0 / 5.2 mm2

Thickness 70 µm

Wafer size 150 mm

Flat position 0 deg

Max. possible chips per wafer 1836 pcs

Passivation frontside Photoimide

Emitter metallization 3200 nm AlSiCu

Collector metallization 1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond electrically conductive glue or solder

Wire bond Al, <500µm

Reject ink dot size ∅ 0.65mm ; max 1.2mm

Recommended storage environment store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

SIGC08T60S

Edited by INFINEON Technologies AI PS DD CLS, L7531D, Edition 2, 26.01.2005

MAXIMUM RATINGS:

Parameter Symbol Value Unit

Collector-emitter voltage, Tj=25 °C VCE 600 V

DC collector current, limited by Tjmax IC 1 ) A

Pulsed collector current, tp limited by Tjmax Icpuls 45 A

Gate emitter voltage VGE ±20 V

Operating junction and storage temperature Tj, Tstg -40 ... +175 °C

SC data, VGE = 15V, VCC = 360V, Tvj = 150°C tp 5 µs

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified

Value

Parameter Symbol Conditions min. typ. max. Unit

Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC= 2mA 600

Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=15A 1.5 2.05

Gate-emitter threshold voltage VGE(th) IC=210µA , VGE=VCE 4.1 4.9 5.7

Zero gate voltage collector current ICES VCE=600V , VGE=0V 0.85 µA

Gate-emitter leakage current IGES VCE=0V , VGE=20V 300 nA

Integrated gate resistor RGint none Ω

ELECTRICAL CHARACTERISTICS (verified by design/characterization):

Value

Parameter Symbol Conditions min. typ. max. Unit

Input capacitance Ciss 860

Output capacitance Coss 55

Reverse transfer capacitance Crss

VCE=25V,

VGE=0V,

f=1MHz 24

SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load

Value 2)

Parameter Symbol Conditions min. typ. max. Unit

Turn-on delay time td(on) 17

Rise time tr 15

Turn-off delay time td(off) 212

Fall time tf

Tj=175°C

VCC=400V,

IC=15A,

VGE=0/15V,

RG= 15Ω 79

2) values also influenced by parasitic L- and C- in measurement and package.

SIGC08T60S

Edited by INFINEON Technologies AI PS DD CLS, L7531D, Edition 2, 26.01.2005

CHIP DRAWING:

SIGC08T60S

Edited by INFINEON Technologies AI PS DD CLS, L7531D, Edition 2, 26.01.2005

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet IKB15N60T

DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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