Memory Module Specifications KVR16R11S8/4EF 4GB 1Rx8 512M x 72-Bit PC3-12800 CL11 Registered w/Parity 240-Pin DIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM's 512M x 72-bit (4GB) CL(IDD) 11 cycles DDR3-1600 CL11 SDRAM (Synchronous DRAM), low voltage, Row Cycle Time (tRCmin) 48.125ns (min.) registered w/parity, 1Rx8 ECC, memory module, based on nine Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at Row Active Time (tRASmin) 35ns (min.) 1.5V. This 240-pin DIMM uses gold contact fingers. The Maximum Operating Power 2.814 W* electrical and mechanical specifications are as follows: UL Rating 94 V - 0 Operating Temperature 0o C to 85o C FEATURES Storage Temperature -55o C to +100o C * JEDEC standard 1.5V (1.425V ~1.575V) Power Supply * *Power will vary depending on the SDRAM and Register/PLL used. VDDQ = 1.5V (1.425V ~ 1.575V) * 800MHz fCK for 1600Mb/sec/pin * 8 independent internal bank * Programmable CAS Latency: 11, 10, 9, 8, 7, 6 * Programmable Additive Latency: 0, CL - 2, or CL - 1 clock * 8-bit pre-fetch * Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] * Bi-directional Differential Data Strobe * Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) * On Die Termination using ODT pin * On-DIMM thermal sensor (Grade B) * Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C * Asynchronous Reset * PCB : Height 1.180" (30.00mm), double sided component SDRAM SUPPORTED Elpida (F-Die) Continued >> Document No. VALUERAM1332-001.A00 04/23/13 Page 1 MODULE DIMENSIONS: (units = millimeters) Document No. VALUERAM1332-001.A00 Page 2