TOSHIBA 1$S403 TENTATIVE TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm e Two-pin small packages are suitable for higher mounting densities. e = e = Excellent in Forward Current and Forward Voltage 8 oe Characteristics : VF(2) = 0.90 V (Typ.) F *A a 040.05 e Fast Reverse Recovery Time : ty; = 60 ns (Typ.) Small Total Capacitance : Cp = 1.5 pF (Typ.) 032.005 0.15 006 MAXIMUM RATINGS (Ta = 25C) 5g CHARACTERISTIC SYMBOL | RATING | UNIT | Maximum (Peak) Reverse Voltage VRM 250 Vv Reverse Voltage VR 200 Vv Maximum (Peak) Forward Current IrmM 300 mA Average Forward Current Io 100 mA JEDEC _ Surge Current (10ms) Irsm 2 A Power Dissipation P 200 (*) | mW EIAJ Junction Temperature Tj 125 C TOSHIBA 1-1E1A Storage Temperature Range Tstg 55~125 C (*) When mounted on a glass epoxy board PCB : 20mm X 20 mm, with copper pad 4mm X 4mm. ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT VF(1) |Ip=10mA 0.72 1.0 Forward Voltage Vr(q) |p =100mA = 0.90 12 Vv IR (1) VR = 50V _ _ 0.1 Reverse Current Tria) [VR = 200V = = 10 un Total Capacitance Cy Vr = 0, f=1MHz 15] 3.0 | pF Reverse Recovery Time try Ip = 10mA (Fig.1) 10 60 ns 961001EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION oar others. @ The information contained herein is subject to change without notice. 1999-02-17 1/3 TOSHIBA 1$S403 Fig1. REVERSE RECOVERY TIME (trp) TEST CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) INPUT OUTPUT WAVEFORM WAVEFORM INPUT 0.01 4F DUT ouTPpUT dq 1 L 0 __ Ip = 10mA 0 s | g S S MARKING 50 ns E ter | F5 7 1999-02-17 2/3 TOSHIBA 1$S403 (A) Tp FORWARD CURRENT TOTAL CAPACITANCE Cr (pF) 100m 380m 10m 38m/Ta = 100C lm 30042 1004 304 104 0 02 04 06 08 10 12 14 16 0.3 Ip VF FORWARD VOLTAGE VF (V) Crt VR f=1MHz Ta = 25C 1 3 10 30 REVERSE VOLTAGE VR (V) 100 18 2.0 300 IR VR 10 3 Ta = 100C e REVERSE CURRENT Ip (A) e 0 50 100 150 200 250 REVERSE VOLTAGE VR (V) trr Ip 100 Ta = 25C Fig.1 ot So oo So REVERSE RECOVERY TIME t,, (ns) - o 0.3 1 3 10 30 100 FORWARD CURRENT Ip (mA) 1999-02-17 3/3