AP4410GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance D Fast Switching D D D G S 30V RDS(ON) 13.5m ID Simple Drive Requirement SO-8 BVDSS 10A S S Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G S S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 30 V +25 V 3 10 A 3 8 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 50 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 1 200810203 AP4410GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.037 - V/ VGS=10V, ID=10A - - 13.5 m VGS=4.5V, ID=5A - - 22 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=15V, ID=10A - 20 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS= +25V - - +100 nA ID=10A - 13.5 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 7 - nC VDS=25V - 14 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 16 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 21 - ns tf Fall Time RD=25 - 15 - ns Ciss Input Capacitance VGS=0V - 1160 - pF Coss Output Capacitance VDS=15V - 240 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 165 - pF Min. Typ. IS=2.1A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 17.1 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4410GM 150 200 o T A =150 o C 10V 8.0V 150 ID , Drain Current (A) ID , Drain Current (A) T A =25 C 6.0V 100 50 8.0V 100 6.0V 50 V G =4.0V V G =4.0V 0 0 0 1 2 3 4 5 6 7 0 8 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 20 I D =10A I D =10A V G =10V 1.6 T A =25 o C Normalized RDS(ON) 18 RDS(ON) (m) 10V 16 14 1.4 1.2 1 12 0.8 10 0.6 3 4 5 6 7 8 9 10 11 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100.00 10.00 IS(A) VGS(th) (V) 2 o o T j =150 C T j =25 C 1.00 1 0.10 0 0.01 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Jujnction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4410GM f=1.0MHz 10000 10 I D =10A V DS =15V 8 1000 C iss C (pF) VGS , Gate to Source Voltage (V) 12 6 4 C oss C rss 100 2 0 10 0 5 10 15 20 25 30 1 6 11 16 21 26 31 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 1ms 10 ID (A) Normalized Thermal Response (Rthja) DUTY=0.5 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Circuit Charge Q Fig 12. Gate Charge Circuit 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 0.90 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number 4410GM YWWSSS Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5