Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BVDSS 30V
▼ Fast Switching RDS(ON) 13.5mΩ
▼ Simple Drive Requirement ID10A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient350 ℃/W
Data and specifications subject to change without notice
200810203
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Continuous Drain Current38
Pulsed Drain Current150
Gate-Source Voltage +25
Continuous Drain Current310
Parameter Rating
Drain-Source Voltage 30
1
AP4410GM
RoHS-compliant Product
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=10A - - 13.5 mΩ
VGS=4.5V, ID=5A - - 22 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=15V, ID=10A - 20 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +25V - - +100 nA
QgTotal Gate Charge2ID=10A - 13.5 - nC
Qgs Gate-Source Charge VDS=15V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 7 - nC
td(on) Turn-on Delay Time2VDS=25V - 14 - ns
trRise Time ID=1A - 16 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 21 - ns
tfFall Time RD=25Ω-15-ns
Ciss Input Capacitance VGS=0V - 1160 - pF
Coss Output Capacitance VDS=15V - 240 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 165 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2.1A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=5A, VGS=0V, - 17.1 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4410GM
AP4410GM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=10A
VG=10V
0
50
100
150
200
012345678
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
8.0V
6.0V
VG=4.0V
0
50
100
150
02468
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC
VG=4.0V
6.0V
8.0V
10V
10
12
14
16
18
20
34567891011
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=10A
TA=25oC
0.01
0.10
1.00
10.00
100.00
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0
1
2
3
-50 0 50 100 150
Tj , Jujnction Temperature ( oC )
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit
4
AP4410GM
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=10A
VDS =15V
10
100
1000
10000
1 6 11 16 21 26 31
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
5V
QGS QGD
QG
Charge
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
c 0.19 0.22 0.25
D 4.80 4.90 5.00
E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e
G
L 0.38 －0.90
α0.00 4.00 8.00
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
0.254 TYP
Package Outline : SO-8
ADVANCED POWER ELECTRONICS CORP.
e
B
134
5678
2
D
E1
A1
A
G
Part Number
4410G
M
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
E
5
meet Rohs requirement
for low voltage MOSFET only
