2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM 2Mb SYNCBURSTTM SRAM MT58L128L18D, MT58L64L32D, MT58L64L36D 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES * Fast clock and OE# access times * Single +3.3V +0.3V/-0.165V power supply (VDD) * Separate +3.3V isolated output buffer supply (VDDQ) * SNOOZE MODE for reduced-power standby * Common data inputs and data outputs * Individual BYTE WRITE control and GLOBAL WRITE * Three chip enables for simple depth expansion and address pipelining * Clock-controlled and registered addresses, data I/Os and control signals * Internally self-timed WRITE cycle * Burst control pin (interleaved or linear burst) * Automatic power-down * 100-pin TQFP package * 165-pin FBGA package * Low capacitive bus loading * x18, x32, and x36 options available OPTIONS 100-Pin TQFP* 165-Pin FBGA (Preliminary Package Data) MARKING * Timing (Access/Cycle/MHz) 3.5ns/6ns/166 MHz 4.0ns/7.5ns/133 MHz 5ns/10ns/100 MHz -6 -7.5 -10 * Configurations 128K x 18 64K x 32 64K x 36 MT58L128L18D MT58L64L32D MT58L64L36D * Packages 100-pin TQFP 165-pin FBGA T F * Operating Temperature Range Commercial (0C to +70C) *JEDEC-standard MS-026 BHA (LQFP). None Micron's 2Mb SyncBurst SRAMs integrate a 128K x 18, 64K x 32, or 64K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input (CLK). The synchronous inputs include all addresses, all data inputs, active LOW chip enable (CE#), two additional chip enables for easy depth expansion (CE2, CE2#), burst control inputs (ADSC#, ADSP#, ADV#), byte write enables (BWx#) and global write (GW#). Part Number Example: MT58L128L18DT-10* *See page 24 for the FBGA Part Marking Guide GENERAL DESCRIPTION The Micron(R) SyncBurstTM SRAM family employs high- speed, low-power CMOS designs that are fabricated using an advanced CMOS process. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM FUNCTIONAL BLOCK DIAGRAM 128K x 18 17 SA0, SA1, SA 15 17 ADDRESS REGISTER 2 MODE SA0-SA1 SA1' BINARY Q1 COUNTER AND LOGIC CLR Q0 ADV# CLK 17 SA0' ADSC# ADSP# BYTE "b" WRITE REGISTER BWb# 9 9 BYTE "a" WRITE REGISTER BWa# BYTE "b" WRITE DRIVER BYTE "a" WRITE DRIVER 9 128K x 9 x 2 MEMORY ARRAY 18 OUTPUT 18 REGISTERS SENSE 18 AMPS OUTPUT BUFFERS 18 E 9 DQs DQPa DQPb BWE# GW# INPUT REGISTERS 18 ENABLE REGISTER CE# CE2 CE2# PIPELINED ENABLE 2 OE# FUNCTIONAL BLOCK DIAGRAM 64K x 32/36 16 ADDRESS REGISTER SA0, SA1, SA 14 16 16 SA0-SA1 MODE SA1' Q1 BINARY COUNTER SA0' CLR Q0 ADV# CLK ADSC# ADSP# BWd# BYTE "d" WRITE REGISTER 9 BYTE "d" WRITE DRIVER 9 BWc# BYTE "c" WRITE REGISTER 9 BYTE "c" WRITE DRIVER 9 BWb# BWa# BWE# GW# CE# CE2 CE2# OE# 64K x 9 x 4 (x36) BYTE "b" WRITE REGISTER 9 BYTE "b" WRITE DRIVER 9 BYTE "a" WRITE REGISTER 9 BYTE "a" WRITE DRIVER 9 ENABLE REGISTER 64K x 8 x 4 (x32) 36 SENSE AMPS OUTPUT REGISTERS 36 36 MEMORY ARRAY OUTPUT BUFFERS E 36 DQs DQPa DQPb DQPb DQPb INPUT REGISTERS 36 PIPELINED ENABLE 4 NOTE: Functional Block Diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for detailed information. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM GENERAL DESCRIPTION (continued) Asynchronous inputs include the output enable (OE#), clock (CLK) and snooze enable (ZZ). There is also a burst mode pin (MODE) that selects between interleaved and linear burst modes. The data-out (Q), enabled by OE#, is also asynchronous. WRITE cycles can be from one to two bytes wide (x18) or from one to four bytes wide (x32/x36), as controlled by the write control inputs. Burst operation can be initiated with either address status processor (ADSP#) or address status controller (ADSC#) input pins. Subsequent burst addresses can be internally generated as controlled by the burst advance pin (ADV#). Address and write control are registered on-chip to simplify WRITE cycles. This allows self-timed WRITE cycles. Individual byte enables allow individual bytes to be written. During WRITE cycles on the x18 device, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb. During WRITE cycles on the x32 and x36 devices, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins and DQPc; BWd# controls DQd pins and DQPd. GW# LOW causes all bytes to be written. Parity pins are only available on the x18 and x36 versions. The device incorporates an additional pipelined enable register which delays turning off the output buffer an additional cycle when a deselect is executed. This feature allows depth expansion without penalizing system performance. Micron's 2Mb SyncBurst SRAMs operate from a +3.3V VDD power supply, and all inputs and outputs are TTL-compatible. The device is ideally suited for Pentium(R) and PowerPC pipelined systems and systems that benefit from a very wide, high-speed data bus. The device is also ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-wide applications. Please refer to Micron's Web site (www.micron.com/ mti/msp/html/sramprod.html) for the latest data sheet. TQFP PIN ASSIGNMENT TABLE PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 x18 NC NC NC x32/x36 NC/DQPc** DQc DQc VDDQ VSS NC DQc NC DQc DQb DQc DQb DQc VSS VDDQ DQb DQc DQb DQc VDD VDD NC VSS DQb DQd DQb DQd VDDQ VSS DQb DQd DQb DQd DQPb DQd NC DQd PIN # 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 x18 x32/x36 VSS VDDQ NC DQd NC DQd NC NC/DQPd** MODE SA SA SA SA SA1 SA0 DNU DNU VSS VDD DNU DNU SA SA SA SA SA SA NC/SA* PIN # 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 x18 NC NC NC x32/x36 NC/DQPa** DQa DQa VDDQ VSS NC DQa NC DQa DQa DQa VSS VDDQ DQa DQa ZZ VDD NC VSS DQa DQb DQa DQb VDDQ VSS DQa DQb DQa DQb DQPa DQb NC DQb PIN # 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 x18 NC NC SA NC NC x32/x36 VSS VDDQ DQb DQb NC/DQPb** SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD CE2# BWa# BWb# BWc# BWd# CE2 CE# SA SA *Pin 50 is reserved for address expansion. **No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM SA NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC PIN ASSIGNMENT (Top View) 100-Pin TQFP 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 81 49 82 48 83 47 84 46 85 45 86 44 87 43 88 42 89 41 90 40 91 39 92 38 93 37 94 36 95 35 96 34 97 33 98 32 99 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 x18 NC/SA* SA SA SA SA SA SA DNU DNU VDD VSS DNU DNU SA0 SA1 SA SA SA SA MODE NC NC/DQPb** NC DQb NC DQb V DDQ VDDQ SS V VSS NC DQb NC DQb DQb DQb DQb DQb VSS VSS VDDQ VDDQ DQb DQb DQb DQb VDD VSS VDD NC NC VDD ZZ VSS DQa DQb DQa DQb VDDQ VDDQ VSS VSS DQa DQb DQa DQb DQa DQPb DQa NC VSS VSS VDDQ VDDQ DQa NC DQa NC NC/DQPa** NC SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD CE2# BWa# BWb# NC NC CE2 CE# SA SA 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 81 49 82 48 83 47 84 46 85 45 86 44 87 43 88 42 89 41 90 40 91 39 92 38 93 37 94 36 95 35 96 34 97 33 98 32 99 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 x32/x36 NC/SA* SA SA SA SA SA SA DNU DNU VDD VSS DNU DNU SA0 SA1 SA SA SA SA MODE NC/DQPc** DQc DQc VDDQ VSS DQc DQc DQc DQc VSS VDDQ DQc DQc VDD VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd NC/DQPd** SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD CE2# BWa# BWb# BWc# BWd# CE2 CE# SA SA *Pin 50 is reserved for address expansion. **No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM TQFP PIN DESCRIPTIONS x18 x32/x36 SYMBOL TYPE SA0 SA1 SA Input Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of CLK. 37 37 36 36 32-35, 44-49, 32-35, 44-49, 80-82, 99, 81, 82, 99, 100 100 DESCRIPTION 93 94 - - 93 94 95 96 BWa# BWb# BWc# BWd# Input Synchronous Byte Write Enables: These active LOW inputs allow individual bytes to be written and must meet the setup and hold times around the rising edge of CLK. A byte write enable is LOW for a WRITE cycle and HIGH for a READ cycle. For the x18 version, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb. For the x32 and x36 versions, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins and DQPc; BWd# controls DQd pins and DQPd. Parity is only available on the x18 and x36 versions. 87 87 BWE# Input Byte Write Enable: This active LOW input permits BYTE WRITE operations and must meet the setup and hold times around the rising edge of CLK. 88 88 GW# Input Global Write: This active LOW input allows a full 18-, 32-, or 36-bit WRITE to occur independent of the BWE# and BWx# lines and must meet the setup and hold times around the rising edge of CLK. 89 89 CLK Input Clock: This signal registers the address, data, chip enable, byte write enables and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock's rising edge. 98 98 CE# Input Synchronous Chip Enable: This active LOW input is used to enable the device and conditions the internal use of ADSP#. CE# is sampled only when a new external address is loaded. 92 92 CE2# Input Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled only when a new external address is loaded. 64 64 ZZ Input Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When ZZ is active, all other inputs are ignored. 97 97 CE2 Input Synchronous Chip Enable: This active HIGH input is used to enable the device and is sampled only when a new external address is loaded. 86 86 OE# Input Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. 83 83 ADV# Input Synchronous Address Advance: This active LOW input is used to advance the internal burst counter, controlling burst access after the external address is loaded. A HIGH on this pin effectively causes wait states to be generated (no address advance). To ensure use of correct address during a WRITE cycle, ADV# must be HIGH at the rising edge of the first clock after an ADSP# cycle is initiated. (continued on next page) 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM TQFP PIN DESCRIPTIONS (continued) x18 x32/x36 SYMBOL TYPE DESCRIPTION 84 84 ADSP# Input Synchronous Address Status Processor: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ is performed using the new address, independent of the byte write enables and ADSC#, but dependent upon CE#, CE2, and CE2#. ADSP# is ignored if CE# is HIGH. Powerdown state is entered if CE2 is LOW or CE2# is HIGH. 85 85 ADSC# Input Synchronous Address Status Controller: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ or WRITE is performed using the new address if CE# is LOW. ADSC# is also used to place the chip into power-down state when CE# is HIGH. 31 31 MODE Input Mode: This input selects the burst sequence. A LOW on this pin selects "linear burst." NC or HIGH on this pin selects "interleaved burst." Do not alter input state while device is operating. (a) 58, 59, (a) 52, 53, 62, 63, 68, 69, 56-59, 62, 63 72, 73 (b) 8, 9, 12, (b) 68, 69, 13, 18, 19, 72-75, 78, 79 22, 23 (c) 2, 3, 6-9, 12, 13 (d) 18, 19, 22-25, 28, 29 74 24 - - 51 80 1 30 DQa DQb Input/ SRAM Data I/Os: For the x18 version, Byte "a" is DQa pins; Byte "b" Output is DQb pins. For the x32 and x36 versions, Byte "a" is DQa pins; Byte "b" is DQb pins; Byte "c" is DQc pins; Byte "d" is DQd pins. Input data must meet setup and hold times around the rising edge of CLK. DQc DQd NC/DQPa NC/DQPb NC/DQPc NC/DQPd NC/ I/O No Connect/Parity Data I/Os: On the x32 version, these pins are No Connect (NC). On the x18 version, Byte "a" parity is DQPa; Byte "b" parity is DQPb. On the x36 version, Byte "a" parity is DQPa; Byte "b" parity is DQPb; Byte "c" parity is DQPc; Byte "d" parity is DQPd. Supply Power Supply: See DC Electrical Characteristics and Operating Conditions for range. 14, 15, 41, 65, 14, 15, 41, 65, 91 91 VDD 4, 11, 20, 27, 4, 11, 20, 27, 54, 61, 70, 77 54, 61, 70, 77 VDDQ 5, 10, 17, 21, 5, 10, 17, 21, 26, 40, 55, 60, 26, 40, 55, 60, 67, 71, 76, 90 67, 71, 76, 90 VSS 38, 39, 42, 43 38, 39, 42, 43 DNU - Do Not Use: These signals may either be unconnected or wired to GND to improve package heat dissipation. Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for range. Supply Ground: GND. 1-3, 6, 7, 16, 25, 28-30, 51-53, 56, 57, 66, 75, 78, 79, 95, 96 16, 66 NC - No Connect: These signals are not internally connected and may be connected to ground to improve package heat dissipation. 50 50 NC/SA - No Connect: This pin is reserved for address expansion. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM PIN LAYOUT (TOP VIEW) 165-PIN FBGA x18 x32/x36 10 11 BWE# ADSC# ADV# SA SA GW# OE# (G#) ADSP# SA NC VSS VSS VDDQ NC DQPa VSS VSS VDD VDDQ NC DQa VSS VSS VSS VDD VDDQ NC DQa VDD VSS VSS VSS VDD VDDQ NC DQa VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa VSS NC VDD VSS VSS VSS VDD NC NC ZZ DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC DQPb NC VDDQ VSS NC NC VSS VSS VDDQ NC NC NC NC SA SA DNU SA1 DNU SA SA SA NC MODE (LBO#) NC SA SA DNU SA0 DNU SA SA SA NC 1 2 3 4 5 6 NC SA CE# BWb# NC CE2# NC SA CE2 NC BWa# CLK NC NC VDDQ VSS VSS VSS NC DQb VDDQ VDD VSS NC DQb VDDQ VDD NC DQb VDDQ NC DQb VDD 7 8 9 A A B VSS VSS VDD VDDQ DQb DQb VSS VSS VSS VDD VDDQ DQb DQb VDD VSS VSS VSS VDD VDDQ DQb DQb VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb VSS NC VDD VSS VSS VSS VDD NC NC ZZ DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa NC/DQPd NC VDDQ VSS NC NC VSS VSS VDDQ NC NC/DQPa NC NC SA SA DNU SA1 DNU SA SA SA NC MODE (LBO#) NC SA SA DNU SA0 DNU SA SA SA NC CE2 BWd# BWa# CLK NC/DQPc NC VDDQ VSS VSS VSS DQc DQc VDDQ VDD VSS DQc DQc VDDQ VDD DQc DQc VDDQ DQc DQc VDD B C D E F G H J K L M N P R NC/DQPb SA M N P NC NC A L M N VDDQ CE2# K L M VSS BWc# BWb# J K L VSS CE# 9 H J K NC SA 8 G H J SA NC 7 F G H GW# OE# (G#) ADSP# 6 E F G NC 5 D E F SA 4 C D E BWE# ADSC# ADV# 3 B C D 11 2 A B C 10 1 N P R P R TOP VIEW R TOP VIEW *No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version. NOTE: Pins 11R, 11P, and 6N reserved for address pin expansion; 4Mb, 8Mb, and 16Mb respectively. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM FBGA PIN DESCRIPTIONS x18 x32/x36 SYMBOL TYPE SA0 SA1 SA Input Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of CLK. 6R 6R 6P 6P 2A, 2B, 3P, 2A, 2B, 3P, 3R, 4P, 4R, 3R, 4P, 4R, 8P, 8R, 9P, 8P, 8R, 9P, 9R, 10A, 10B, 9R, 10A, 10B, 10P, 10R, 11A 10P, 10R DESCRIPTION 5B 4A - - 5B 5A 4A 4B BWa# BWb# BWc# BWd# Input Synchronous Byte Write Enables: These active LOW inputs allow individual bytes to be written and must meet the setup and hold times around the rising edge of CLK. A byte write enable is LOW for a WRITE cycle and HIGH for a READ cycle. For the x18 version, BWa# controls DQas and DQPa; BWb# controls DQbs and DQPb. For the x32 and x36 versions, BWa# controls DQas and DQPa; BWb# controls DQbs and DQPb; BWc# controls DQcs and DQPc; BWd# controls DQds and DQPd. Parity is only available on the x18 and x36 versions. 7A 7A BWE# Input Byte Write Enable: This active LOW input permits BYTE WRITE operations and must meet the setup and hold times around the rising edge of CLK. 7B 7B GW# Input Global Write: This active LOW input allows a full 18-, 32-, or 36-bit WRITE to occur independent of the BWE# and BWx# lines and must meet the setup and hold times around the rising edge of CLK. 6B 6B CLK Input Clock: This signal registers the address, data, chip enable, byte write enables, and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock's rising edge. 3A 3A CE# Input Synchronous Chip Enable: This active LOW input is used to enable the device and conditions the internal use of ADSP#. CE# is sampled only when a new external address is loaded. 6A 6A CE2# Input Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled only when a new external address is loaded. 11H 11H ZZ Input Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When ZZ is active, all other inputs are ignored. 3B 3B CE2 Input Synchronous Chip Enable: This active HIGH input is used to enable the device and is sampled only when a new external address is loaded. 8B 8B OE#(G#) Input Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. 9A 9A ADV# Input Synchronous Address Advance: This active LOW input is used to advance the internal burst counter, controlling burst access after the external address is loaded. A HIGH on ADV# effectively causes wait states to be generated (no address advance). To ensure use of correct address during a WRITE cycle, ADV# must be HIGH at the rising edge of the first clock after an ADSP# cycle is initiated. (continued on next page) 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM FBGA PIN DESCRIPTIONS (continued) x18 x32/x36 SYMBOL TYPE 9B 9B ADSP# Input Synchronous Address Status Processor: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ is performed using the new address, independent of the byte write enables and ADSC#, but dependent upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Powerdown state is entered if CE2 is LOW or CE2# is HIGH. 8A 8A ADSC# Input Synchronous Address Status Controller: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ or WRITE is performed using the new address if CE# is LOW. ADSC# is also used to place the chip into power-down state when CE# is HIGH. 1R 1R MODE (LB0#) Input Mode: This input selects the burst sequence. A LOW on this input selects "linear burst." NC or HIGH on this input selects "interleaved burst." Do not alter input state while device is operating. (a) 10J, 10K, (a) 10J, 10K, 10L, 10M, 11D, 10L, 10M, 11J, 11E, 11F, 11G 11K, 11L, 11M (b) 1J, 1K, (b) 10D, 10E, 1L, 1M, 2D, 10F, 10G, 11D, 2E, 2F, 2G 11E, 11F, 11G (c) 1D, 1E, 1F, 1G, 2D, 2E, 2F, 2G (d) 1J, 1K, 1L, 1M, 2J, 2K, 2L, 2M 11C 1N - - 11N 11C 1C 1N DQa DQb Input/ SRAM Data I/Os: For the x18 version, Byte "a" is associated DQas; Output Byte "b" is associated with DQbs. For the x32 and x36 versions, Byte "a" is associated with DQas; Byte "b" is associated with DQbs; Byte "c" is associated with DQcs; Byte "d" is associated with DQds. Input data must meet setup and hold times around the rising edge of CLK. DQc DQd NC/DQPa NC/DQPb NC/DQPc NC/DQPd 1H, 4D, 4E, 4F, 1H, 4D, 4E, 4F, 4G, 4H, 4J, 4G, 4H, 4J, 4K, 4L, 4M, 4K, 4L, 4M, 8D, 8E, 8F, 8D, 8E, 8F, 8G, 8H, 8J, 8G, 8H, 8J, 8K, 8L, 8M 8K, 8L, 8M 3C, 3D, 3E, 3F, 3G, 3J, 3K, 3L, 3M, 3N, 9C, 9D, 9E, 9F, 9G, 9J, 9K, 9L, 9M, 9N DESCRIPTION 3C, 3D, 3E, 3F, 3G, 3J, 3K, 3L, 3M, 3N, 9C, 9D, 9E, 9F, 9G, 9J, 9K, 9L, 9M, 9N VDD VDDQ NC/ I/O No Connect/Parity Data I/Os: On the x32 version, these are No Connect (NC). On the x18 version, Byte "a" parity is DQPa; Byte "b" parity is DQPb. On the x36 version, Byte "a" parity is DQPa; Byte "b" parity is DQPb; Byte "c" parity is DQPc; Byte "d" parity is DQPd. Supply Power Supply: See DC Electrical Characteristics and Operating Conditions for range. Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for range. (continued on next page) 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM FBGA PIN DESCRIPTIONS (continued) x18 x32/x36 SYMBOL TYPE DESCRIPTION 2H, 4C, 4N, 5C, 2H, 4C, 4N, 5C, 5D, 5E 5F, 5D, 5E 5F, 5G, 5H, 5J, 5G, 5H, 5J, 5K, 5L, 5M, 5K, 5L, 5M, 6C, 6D, 6E, 6F, 6C, 6D, 6E, 6F, 6G, 6H, 6J, 6G, 6H, 6J, 6K, 6L, 6M, 6K, 6L, 6M, 7C, 7D, 7E, 7C, 7D, 7E, 7F, 7G, 7H, 7F, 7G, 7H, 7J, 7K, 7L, 7J, 7K, 7L, 7M, 7N, 8C, 8N 7M, 7N, 8C, 8N VSS 5P, 5R, 7P, 7R 5P, 5R, 7P, 7R DNU - Do Not Use: These signals may either be unconnected or wired to GND to improve package heat dissipation. NC - No Connect: These signals are not internally connected and may be connected to ground to improve package heat dissipation. Pins 11R, 11P, and 6N reserved for address pin expansion; 4Mb, 8Mb, and 16Mb respectively. 1A, 1B, 1C, 1A, 1B, 1P, 1D, 1E, 1F, 2C, 2N, 1G, 1P, 2C, 2P, 2R, 3H, 2J, 2K, 5N, 6N, 2L, 2M, 2N, 9H, 10C, 2P, 2R, 3H, 10H, 10N, 4B, 5A, 5N, 11A, 11B, 6N, 9H, 10C, 11P, 11R 10D, 10E, 10F, 10G, 10H, 10N, 11B, 11J, 11K, 11L, 11M, 11N, 11P, 11R 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 Supply Ground: GND. 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH) FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL) X...X00 X...X01 X...X10 X...X11 X...X01 X...X00 X...X11 X...X10 X...X10 X...X11 X...X00 X...X01 X...X11 X...X10 X...X01 X...X00 LINEAR BURST ADDRESS TABLE (MODE = LOW) FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL) X...X00 X...X01 X...X10 X...X11 X...X01 X...X10 X...X11 X...X00 X...X10 X...X11 X...X00 X...X01 X...X11 X...X00 X...X01 X...X10 Partial Truth Table For WRITE COMMANDS (x18) FUNCTION GW# BWE# BWa# BWb# READ H H X X READ H L H H WRITE Byte "a" H L L H WRITE Byte "b" H L H L WRITE All Bytes H L L L WRITE All Bytes L X X X PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36) FUNCTION GW# BWE# BWa# BWb# BWc# BWd# READ H H X X X X READ H L H H H H WRITE Byte "a" H L L H H H WRITE All Bytes H L L L L L WRITE All Bytes L X X X X X NOTE: Using BWE# and BWa# through BWd#, any one or more bytes may be written. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM TRUTH TABLE OPERATION ADDRESS USED Deselected Cycle, Power-Down None Deselected Cycle, Power-Down None Deselected Cycle, Power-Down None CE# CE2# CE2 ZZ ADSP# ADSC# ADV# WRITE# OE# CLK DQ H L L X X H X L X L L L X L L L X X X X X X X X X X X L-H L-H L-H High-Z High-Z High-Z Deselected Cycle, Power-Down Deselected Cycle, Power-Down SNOOZE MODE, Power-Down READ Cycle, Begin Burst READ Cycle, Begin Burst None None None External External L L X L L X H X L L L X X H H L L H L L H H X L L L L X X X X X X X X X X X X X X X X L H L-H L-H X L-H L-H High-Z High-Z High-Z Q High-Z WRITE Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Continue Burst External External External Next L L L X L L L X H H H X L L L L H H H H L L L H X X X L L H H H X L H L L-H L-H L-H L-H D Q High-Z Q READ Cycle, Continue Burst READ Cycle, Continue Burst Next Next X H X X X X L L H X H H L L H H H L L-H L-H High-Z Q READ Cycle, Continue Burst WRITE Cycle, Continue Burst WRITE Cycle, Continue Burst Next Next Next H X H X X X X X X L L L X H X H H H L L L H L L H X X L-H L-H L-H High-Z D D READ Cycle, Suspend Burst READ Cycle, Suspend Burst Current Current X X X X X X L L H H H H H H H H L H L-H L-H Q High-Z READ Cycle, Suspend Burst READ Cycle, Suspend Burst WRITE Cycle, Suspend Burst WRITE Cycle, Suspend Burst Current Current Current Current H H X H X X X X X X X X L L L L X X H X H H H H H H H H H H L L L H X X L-H L-H L-H L-H Q High-Z D D NOTE: 1. X means "Don't Care." # means active LOW. H means logic HIGH. L means logic LOW. 2. For WRITE#, L means any one or more byte write enable signals (BWa#, BWb#, BWc# or BWd#) and BWE# are LOW or GW# is LOW. WRITE# = H for all BWx#, BWE#, GW# HIGH. 3. BWa# enables WRITEs to DQa pins, DQPa. BWb# enables WRITEs to DQb pins, DQPb. BWc# enables WRITEs to DQc pins, DQPc. BWd# enables WRITEs to DQd pins, DQPd. DQPa and DQPb are only available on the x18 and x36 versions. DQPc and DQPd are only available on the x36 version. 4. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK. 5. Wait states are inserted by suspending burst. 6. For a WRITE operation following a READ operation, OE# must be HIGH before the input data setup time and held HIGH throughout the input data hold time. 7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up. 8. ADSP# LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write enable signals and BWE# LOW or GW# LOW for the subsequent L-H edge of CLK. Refer to WRITE timing diagram for clarification. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Maximum junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See Micron Technical Note TN-05-14 for more information. Voltage on VDD Supply Relative to Vss .................................... -0.5V to +4.6V Voltage on VDDQ Supply Relative to Vss .................................... -0.5V to +4.6V VIN ............................................... -0.5V to VDDQ + 0.5V Storage Temperature (plastic) ............ -55C to +150C Junction Temperature** .................................... +150C Short Circuit Output Current ........................... 100mA 3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (0C TA +70C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted) DESCRIPTION CONDITIONS Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage 0V VIN VDD Output(s) disabled, 0V VIN VDD IOH = -4.0mA IOL = 8.0mA Supply Voltage Isolated Output Buffer Supply SYMBOL MIN MAX UNITS NOTES VIH VIL 2.0 -0.3 VDD + 0.3 0.8 V V 1, 2 1, 2 ILI ILO -1.0 -1.0 1.0 1.0 A A 3 VOH VOL 2.4 - - 0.4 V V 1, 4 1, 4 VDD VDDQ 3.135 3.135 3.6 VDD V V 1 1, 5 NOTE: 1. All voltages referenced to VSS (GND). 2. Overshoot: VIH +4.6V for t tKC/2 for I 20mA Undershoot: VIL -0.7V for t tKC/2 for I 20mA Power-up: VIH +3.6V and VDD 3.135V for t 200ms 3. MODE pin has an internal pull-up, and input leakage = 10A. 4. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 5. VDDQ should never exceed VDD. VDD and VDDQ can be connected together for 3.3V I/O. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM IDD OPERATING CONDITIONS AND MAXIMUM LIMITS (0C TA +70C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted) MAX DESCRIPTION Power Supply Current: Operating Power Supply Current: Idle CMOS Standby SYMBOL TYP -6 -7.5 -10 IDD 100 340 280 225 mA 1, 2, 3 IDD1 30 85 70 65 mA 1, 2, 3 ISB2 0.5 10 10 10 mA 2, 3 ISB3 6 25 25 25 mA 2, 3 ISB4 30 85 70 65 mA 2, 3 Device selected; VDD = MAX; ADSC#, ADSP#, GW#, BWx#, ADV# VIH; All inputs VSS + 0.2 or VDD - 0.2; Cycle time tKC MIN Device deselected; VDD = MAX; All inputs VSS + 0.2 or VDD - 0.2; All inputs static; CLK frequency = 0 TTL Standby Clock Running CONDITIONS Device selected; All inputs VIL or VIH; Cycle time tKC MIN; VDD = MAX; Outputs open Device deselected; VDD = MAX; All inputs VIL or VIH; All inputs static; CLK frequency = 0 Device deselected; VDD = MAX; ADSC#, ADSP#, GW#, BWx#, ADV# VIH; All inputs VSS + 0.2 or VDD - 0.2; Cycle time tKC MIN UNITS NOTES TQFP CAPACITANCE DESCRIPTION Control Input Capacitance Input/Output Capacitance (DQ) CONDITIONS SYMBOL TYP MAX UNITS NOTES TA = 25C; f = 1 MHz; CI 2.7 3.5 pF 4 VDD = 3.3V CO 4 5 pF 4 Address Capacitance CA 2.5 3.5 pF 4 Clock Capacitance CCK 2.5 3.5 pF 4 FBGA CAPACITANCE DESCRIPTION CONDITIONS SYMBOL TYP MAX UNITS NOTES CI 2.5 3.5 pF 4, 5 TA = 25C; f = 1 MHz CO 4 5 pF 4, 5 CCK 2.5 3.5 pF 4, 5 Address/Control Input Capacitance Output Capacitance (Q) Clock Capacitance NOTE: 1. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and greater output loading. 2. "Device deselected" means device is in power-down mode as defined in the truth table. "Device selected" means device is active (not in power-down mode). 3. Typical values are measured at 3.3V, 25C, and 10ns cycle time. 4. This parameter is sampled. 5. Preliminary package data. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM TQFP THERMAL RESISTANCE DESCRIPTION Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Top of Case) CONDITIONS SYMBOL TYP UNITS NOTES Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. qJA 40 C/W 1 qJC 8 C/W 1 CONDITIONS SYMBOL TYP Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. JA 40 C/W 1, 2 JC 9 C/W 1, 2 JB 17 C/W 1, 2 FBGA THERMAL RESISTANCE DESCRIPTION Junction to Ambient (Airflow of 1m/s) Junction to Case (Top) Junction to Pins (Bottom) UNITS NOTES NOTE: 1. This parameter is sampled. 2. Preliminary package data. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 1) (0C TA +70C; VDD = +3.3V +0.3V/-0.165V) -6 DESCRIPTION Clock Clock cycle time Clock frequency Clock HIGH time Clock LOW time Output Times Clock to output valid Clock to output invalid Clock to output in Low-Z Clock to output in High-Z OE# to output valid OE# to output in Low-Z OE# to output in High-Z Setup Times Address Address status (ADSC#, ADSP#) Address advance (ADV#) Write signals (BWa#-BWd#, BWE#, GW#) Data-in Chip enables (CE#, CE2#, CE2) Hold Times Address Address status (ADSC#, ADSP#) Address advance (ADV#) Write signals (BWa#-BWd#, BWE#, GW#) Data-in Chip enables (CE#, CE2#, CE2) SYMBOL MIN tKC 6.0 fKF tKH tKL tKQLZ 3.5 0 tAS tADSS tAAS tWS tDS tCES tAH tADSH tAAH tWH tDH tCEH 100 3.2 3.2 4.0 5.0 1.5 1.5 4.0 4.0 0 3.5 MAX 10 1.5 1.5 3.5 3.5 tOEHZ -10 MIN 133 1.9 1.9 1.5 1.5 tOEQ -7.5 MAX 7.5 1.7 1.7 tKQHZ tOELZ MIN 166 tKQ tKQX MAX 5.0 5.0 0 4.0 4.5 UNITS NOTES ns MHz ns ns 2 2 ns ns ns ns ns ns ns 3 3, 4, 5, 6 3, 4, 5, 6 7 3, 4, 5, 6 3, 4, 5, 6 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 2.2 2.2 2.2 2.2 ns ns ns ns 8, 9 8, 9 8, 9 8, 9 1.5 1.5 1.5 1.5 2.2 2.2 ns ns 8, 9 8, 9 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns 8, 9 8, 9 8, 9 8, 9 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 8, 9 8, 9 NOTE: 1. Test conditions as specified with the output loading shown in Figure 1 (VDDQ = +3.3V +0.3V/-0.165V) unless otherwise noted. 2. Measured as HIGH above VIH and LOW below VIL. 3. This parameter is measured with the output loading shown in Figure 2. 4. This parameter is sampled. 5. Transition is measured 500mV from steady state voltage. 6. Refer to Technical Note TN-58-09, "Synchronous SRAM Bus Contention Design Considerations," for a more thorough discussion on these parameters. 7. OE# is a "Don't Care" when a byte write enable is sampled LOW. 8. A WRITE cycle is defined by at least one byte write enable LOW and ADSP# HIGH for the required setup and hold times. A READ cycle is defined by all byte write enables HIGH and ADSC# or ADV# LOW or ADSP# LOW for the required setup and hold times. 9. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK when either ADSP# or ADSC# is LOW and chip enabled. All other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each rising edge of CLK when either ADSP# or ADSC# is LOW to remain enabled. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM Output Load Equivalents AC TEST CONDITIONS Input pulse levels ................. VIH = (VDD/2.2) + 1.5V Q .................... VIL = (VDD/2.2) - 1.5V Z O= 50 Input rise and fall times ..................................... 1ns Input timing reference levels ..................... VDD/2.2 50 VT = 1.5V Output reference levels ............................ VDDQ/2.2 Output load ............................. See Figures 1 and 2 Figure 1 +3.3V LOAD DERATING CURVES 317 Q The Micron 128K x 18, 64K x 32, and 64K x 36 SyncBurst SRAM timing is dependent upon the capacitive loading on the outputs. Consult the factory for copies of I/O current versus voltage curves. 5pF 351 Figure 2 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM SNOOZE MODE The ZZ pin is an asynchronous, active HIGH input that causes the device to enter SNOOZE MODE. When the ZZ pin becomes a logic HIGH, ISB2Z is guaranteed after the setup time tZZ is met. Any READ or WRITE operation pending when the device enters SNOOZE MODE is not guaranteed to complete successfully. Therefore, SNOOZE MODE must not be initiated until valid pending operations are completed. SNOOZE MODE is a low-current, "power-down" mode in which the device is deselected and current is reduced to ISB2Z. The duration of SNOOZE MODE is dictated by the length of time the ZZ pin is in a HIGH state. After the device enters SNOOZE MODE, all inputs except ZZ become gated inputs and are ignored. SNOOZE MODE ELECTRICAL CHARACTERISTICS DESCRIPTION Current during SNOOZE MODE CONDITIONS SYMBOL ZZ VIH ZZ active to input ignored MAX UNITS ISB2Z 10 mA tZZ 2(tKC) ns 1 ns 1 ns 1 ns 1 ZZ inactive to input sampled tRZZ ZZ active to snooze current tZZI tRZZI ZZ inactive to exit snooze current MIN 2(tKC) 2(tKC) 0 NOTES NOTE: 1. This parameter is sampled. SNOOZE MODE WAVEFORM CLK t ZZ ZZ I t RZZ t ZZI SUPPLY I ISB2Z t RZZI ALL INPUTS DESELECT or READ Only (except ZZ) Outputs (Q) High-Z DON'T CARE 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM READ TIMING tKC CLK tKL tKH tADSS tADSH ADSP# tADSS tADSH ADSC# tAS tAH A1 ADDRESS A2 tWS A3 Burst continued with new base address. tWH GW#, BWE#, BWa#-BWd# tCES Deselect (NOTE 4) cycle. tCEH CE# (NOTE 2) tAAS tAAH ADV# ADV# suspends burst. OE# tOEQ tKQ t OELZ tKQX (NOTE 3) t KQLZ Q High-Z t OEHZ Q(A2) Q(A1) t KQHZ Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A3) t KQ Burst wraps around to its initial state. (NOTE 1) Single READ BURST READ DON'T CARE UNDEFINED READ TIMING PARAMETERS -6 SYM tKC MIN 6.0 fKF tKH tKL tKQLZ 166 tOEHZ 133 3.5 0 4.0 UNITS 100 ns MHz tAAS 5.0 ns ns ns ns ns tAH ns ns ns tAAH 1.5 1.5 4.0 4.0 0 3.5 -6 MAX 3.2 3.2 1.5 1.5 3.5 3.5 tOEQ -10 MIN 10 1.9 1.9 1.5 1.5 tKQHZ tOELZ -7.5 MIN MAX 7.5 1.7 1.7 tKQ tKQX MAX 5.0 5.0 0 4.0 4.5 SYM tAS tADSS tWS tCES tADSH tWH tCEH MIN 1.5 1.5 -7.5 MAX MIN 1.5 1.5 MAX -10 MIN 2.2 2.2 MAX UNITS ns ns 1.5 1.5 1.5 1.5 1.5 1.5 2.2 2.2 2.2 ns ns ns 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. Timing is shown assuming that the device was not enabled before entering into this sequence. OE# does not cause Q to be driven until after the following clock rising edge. 4. Outputs are disabled within two clock cycles after deselect. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM WRITE TIMING t KC CLK tKH tKL tADSS tADSH ADSP# ADSC# extends burst. tADSS tADSH tADSS tADSH ADSC# tAS tAH A1 ADDRESS A2 A3 Byte write signals are ignored for first cycle when ADSP# initiates burst. tWS tWH BWE#, BWa#-BWd# (NOTE 5) tWS tWH GW# tCES tCEH CE# (NOTE 2) tAAS tAAH ADV# ADV# suspends burst. (NOTE 4) OE# (NOTE 3) tDS D tDH D(A2) D(A1) High-Z D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) tOEHZ (NOTE 1) Q BURST READ Single WRITE BURST WRITE Extended BURST WRITE DON'T CARE UNDEFINED WRITE TIMING PARAMETERS -6 SYM tKC MIN 6.0 fKF tKH tKL MAX -7.5 MIN MAX 7.5 166 1.7 1.7 tOEHZ -10 MIN 10 133 1.9 1.9 ns 100 3.2 3.2 4.5 MHz ns ns tAS 1.5 1.5 2.2 tADSS 1.5 1.5 1.5 1.5 1.5 1.5 2.2 2.2 2.2 ns ns ns tWS 4.0 UNITS ns ns tAAS 3.5 -6 MAX -10 MIN 1.5 tCES 1.5 0.5 0.5 1.5 0.5 0.5 2.2 0.5 0.5 ns ns ns 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 0.5 0.5 0.5 0.5 0.5 0.5 ns ns tAH tADSH tAAH tDH tWH tCEH MAX -7.5 MIN MAX 1.5 SYM tDS MIN 2.2 MAX UNITS ns NOTE: 1. D(A2) refers to input for address A2. D(A2 + 1) refers to input for the next internal burst address following A2. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/ output data contention for the time period prior to the byte write enable inputs being sampled. 4. ADV# must be HIGH to permit a WRITE to the loaded address. 5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa# and BWb# LOW for x18 device; or GW# HIGH and BWE#, BWa#-BWd# LOW for x32 and x36 devices. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM READ/WRITE TIMING tKC CLK tKL tKH tADSS tADSH ADSP# ADSC# tAS A1 ADDRESS tAH A3 A2 BWE#, BWa#-BWd# (NOTE 4) tCES A4 tWS tWH tDS tDH A5 A6 D(A5) D(A6) tCEH CE# (NOTE 2) ADV# OE# tKQ tOELZ D High-Z Q High-Z D(A3) tOEHZ tKQLZ Q(A1) Q(A2) Q(A4) Back-to-Back READs Single WRITE Q(A4+1) Q(A4+2) Q(A4+3) BURST READ Back-to-Back WRITEs (NOTE 5) DON'T CARE UNDEFINED READ/WRITE TIMING PARAMETERS -6 SYM tKC MIN MAX 6.0 fKF -7.5 MIN MAX 7.5 166 133 1.7 1.9 3.2 tKL 1.7 1.9 3.2 tKQLZ tOELZ 3.5 1.5 0 tOEHZ tAS 4.0 1.5 0 3.5 1.5 SYM MIN tADSS 100 ns MHz ns 1.5 1.5 1.5 1.5 2.2 2.2 ns ns 1.5 1.5 0.5 1.5 1.5 0.5 2.2 2.2 0.5 ns ns ns 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 1.5 2.2 0.5 0.5 0.5 0.5 0.5 0.5 ns ns tDS tCES 5.0 ns ns tADSH 4.5 ns ns ns ns tCEH 1.5 0 4.0 -10 UNITS tWS tAH tWH tDH MAX -7.5 MIN MAX MAX 10 tKH tKQ -6 -10 MIN MIN MAX UNITS NOTE: 1. Q(A4) refers to output from address A4. Q(A4 + 1) refers to output from the next internal burst address following A4. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP#, ADSC# or ADV# cycle is performed. 4. GW# is HIGH. 5. Back-to-back READs may be controlled by either ADSP# or ADSC#. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 21 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM 165-PIN FBGA 0.85 0.075 0.10 A SEATING PLANE A 10.00 +.05 O .45 -.10 TYP 1.00 (TYP) PIN A1 ID 1.20 MAX PIN A1 ID 7.50 0.05 14.00 15.00 0.10 7.00 0.05 1.00 (TYP) MOLD COMPOUND: EPOXY NOVOLAC SUBSTRATE: PLASTIC LAMINATE 6.50 0.05 SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb SOLDER BALL PAD: O .33mm 5.00 0.05 13.00 0.10 NOTE: 1. All dimensions in millimeters MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM 100-PIN PLASTIC TQFP (JEDEC LQFP) PIN #1 ID 22.10 +0.10 -0.15 0.15 +0.03 -0.02 0.32 +0.06 -0.10 0.65 20.10 0.10 DETAIL A 0.62 1.50 0.10 0.10 14.00 0.10 16.00 +0.20 -0.05 0.25 0.10 +0.10 -0.05 GAGE PLANE 1.00 (TYP) 0.60 0.15 1.40 0.05 DETAIL A NOTE: 1. All dimensions in millimeters MAX or typical here noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM FBGA PART MARKING GUIDE SDK PC Product Family Speed Grade S = SRAM M = SRAM Mechanical sample X = SRAM Engineering sample B = -3 C = -3.3 D = -4 F = -4.4 G = -5 H = -6 J = -7 K = -7.5 Product T ype B C D F G H J K = = = = = = = = QDRTM burst of 2 QDR burst of 4 DDR SyncBurstTM, Pipelined, Single-Cycle Deslect SyncBurst, Pipelined, Double-Cycle Deslect SyncBurst, Flow-Through ZBT(R), Pipelined ZBT, Flow-Through Width B = x18, 3.3V VDDQ C = x18, 2.5V VDDQ D = x18, 3.3V & 2.5V VDDQ F = x18, HSTL VDDQ G = x32, 3.3V VDDQ H = x32, 2.5V VDDQ J = x32, 3.3V & 2.5V VDDQ K = x32, HSTL VDDQ L = x36, 3.3V VDDQ M = x36, 2.5V VDDQ N = x36, 3.3V & 2.5V VDDQ P = x36, HSTL VDDQ Q = x72, 3.3V VDDQ R = x72, 2.5V VDDQ S = x72, 3.3V & 2.5V VDDQ T = x72, HSTL VDDQ Density B= C= D= F = G= H= J = K= L = M= N= P = 2Mb, 3.3V VDD 2Mb, 2.5V VDD 2Mb, 1.8V VDD 4Mb, 3.3V VDD 4Mb, 2.5V VDD 4Mb, 1.8V VDD 8Mb, 3.3V VDD 8Mb, 2.5V VDD 8Mb, 1.8V VDD 16Mb, 3.3V VDD 16Mb, 2.5V VDD 16Mb, 1.8V VDD Q= R= S = T = V= W= X= Y= Z = L = -8 M = -8.5 N = -9 P = -9.5 Q = -10 R = -10.5 S = -11 T = -12 32Mb, 3.3V VDD 32Mb, 2.5V VDD 32Mb, 1.8V VDD 64Mb, 3.3V VDD 64Mb, 2.5V VDD 64Mb, 1.8V VDD 128Mb, 3.3V VDD 128Mb, 2.5V VDD 128Mb, 1.8V VDD 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron and SyncBurst are registered trademarks of Micron Technology, Inc. Pentium is a registered trademark of Intel Corporation. 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM REVISION HISTORY Changed FBGA capacitance values, REV 8/00, FINAL ............................................................................. August/7/00 CI; TYP 2.5pF from 4pF; MAX. 5pF from 7pF CO; TYP 4pF from 6pF; MAX. 5pF from 7pF CCK; TYP 2.5pF from 5pF; MAX. 3.5pF from 6pF Removed IT References, REV 7/00, FINAL ..................................................................................................... July/14/00 Added FBGA Part Marking Guide Added Revision History to Datasheet Removed IT from Part Number Example, REV 6/00, FINAL ....................................................................... June/21/00 Added # of datalines to the databus in x32/36 Block Diagram Added Note - "Preliminary Package Data" to FBGA Capacitance and Thermal Resistance Tables Changed heading on Mechanical Drawing from BGA to FBGA Added 165-Pin FBGA package, REV 3/00, FINAL ....................................................................................... May/23/00 Added PRELIMINARY PACKAGE DATA to diagram 2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L128L18D_2.p65 - Rev. 8/00 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.