2SA2013 / 2SC5566
No.6307-1/5
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitales miniaturization in end products.
High allowable power dissipation.
Specifications ( ) : 2SA2013
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--50)100 V
Collector-to-Emitter Voltage VCES (--50)100 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)4 A
Collector Current (Pulse) ICP (--)7 A
Base Current IB(--)600 mA
Collector Dissipation PCMounted on a ceramic board (250mm20.8mm) 1.3 W
Tc=25°C 3.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)1 µA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1 µA
DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 560
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)500mA (360)400 MHz
Marking : 2SA2013 : AT 2SC5566 : FC Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6307B
62405EA MS IM TB-00001405 / 52501 TS KT TA-3260
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2013 / 2SC5566
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
2SA2013 / 2SC5566
No.6307-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Output Capacitance Cob VCB=(--)10V, f=1MHz (24)15 pF
Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=(--)1A, IB=(--)50mA (--105)85 (--180)130 mV
VCE(sat)2 IC=(--)2A, IB=(--)100mA (--200)150 (--340)225 mV
Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)100mA (--)0.89 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--50)100 V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100µA, RBE=0(--50)100 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=(--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)6 V
T urn-On Time ton See specified Test Circuit.
(30)35
ns
Storage Time tstg See specified Test Circuit.
(230)300
ns
Fall T ime tfSee specified Test Circuit. (15)20 ns
Package Dimensions Switching Time Test Circuit
unit : mm
7007-004
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
123
1.5
Top View
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
VR10 RB
VCC=25VVBE= --5V
++
50
INPUT
OUTPUT
RL
25
100µF 470µF
PW=20µsIB1
D.C.1% IB2
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
IC -- VCE IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
4
3
2
1
0.4 0.8 1.2 1.6 2.0
00
IB=0mA
10mA
20mA
30mA
40mA
50mA
100mA
60mA
70mA
80mA
90mA
IT00153
--4
--3
--2
--1
00 --0.4 --0.8 --1.2 --1.6 --2.0
--10mA
--20mA
--60mA
--50mA
--80mA
--90mA
--100mA
IB=0mA
IT00152
--30mA
--40mA
--70mA
2SA2013
2SC5566
2SA2013 / 2SC5566
No.6307-3/5
hFE -- IChFE -- IC
DC Current Gain, hFE
Collector Current, IC -- A
Collector Current, IC -- A
DC Current Gain, hFE
IC -- VBE
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
VCE(sat) -- ICVCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
VCE(sat) -- ICVCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4
2SC5566
VCE=2V
Ta=75°C
25°C
--25°C
IT00155
Ta=75°C
25°C
--25°C
2SA2013
VCE= --2V
--4.0
--3.5
--3.0
--2.5
--2.0
--1.0
--0.5
--1.5
00 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
IT00154
1000
100
2
3
5
7
2
3
5
7
10
2
3
5
7
1.0
0.01 0.1
23 57 23 57 23 57
1.0 10
Ta=75°C
--25
°C
IT00160
2SC5566
IC / IB=20
--1000
--100
2
3
5
7
2
3
5
7
--10
2
3
5
7
--1.0
--0.01 --0.1
23 57 23 57 23 57
--1.0 --10
Ta=75°C
--
25
°C
IT00158
2SA2013
IC / IB=20
Ta=75°C
25°C
--25°C
1000
100
7
5
3
2
7
5
3
2
10
--0.01 325 --10--0.1
73257 3257
--1.0
2SA2013
VCE= --2V
IT00156
1000
100
7
5
3
2
7
5
3
2
10
0.01 325 100.1
73257 3257
1.0
Ta=75°C
--25°C
25°C
2SC5566
VCE=2V
IT00157
25°C
25°C
0.01 0.1
23 57 23 57 23 57
1.0 10
10000
1000
7
5
3
2
7
5
3
2
7
5
3
2
100
10
IT00161
Ta=75°C
--25°C
2SC5566
IC / IB=50
--0.01 --0.1
23 57 23 57 23 57
--1.0 --10
--10000
7
5
3
2
7
5
3
2
--1000
7
5
3
2
--100
--10
IT00159
Ta=75°C
Ta=75°C
25°C
25°C
--25°C
--25°C
2SA2013
IC / IB=50
25°C
25°C
Ta=75°C
--25°C
2SA2013 / 2SC5566
No.6307-4/5
10
1.0
0.01
2
7
5
3
2
7
5
3
2
0.1
7
5
3
2
1.00.1 10 100
253725372537
I
CP=7A 100ms
10ms
1ms
100µs
500µs
IC=4A
DC operation
IT00168
0
2.0
1.5
1.3
1.0
0.5
2006040 80 100 140120 160
IT00169
2SA2013 / 2SC5566
VBE(sat) -- ICVBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
A S O PC -- Ta
Collector Dissipation, PC -- W
Ambient Temperature, Ta -- °CCollector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
2SA2013 / 2SC5566
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
Mounted on a ceramic board (250mm
2
0.8mm)
Cob -- VCB
fT -- ICfT -- IC
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
10
1.0
0.1
0.01 0.1 1.0 10
Ta= --25°C
75°C
7
5
3
2
7
5
3
2
23 57 23 57 23 57
2SC5566
IC / IB=50
IT00163
--10
--1.0
--0.1
--0.01 --0.1 --1.0 --10
Ta=
--
25
°
C
25°C
75°C
7
5
3
2
7
5
3
2
23 57 23 57 23 57
2SA2013
IC / IB=50
IT00162
25°C
7
3
100
10
2
5
1000
7
5
3
2
--0.01 257 7 73 --0.1 253253
--1.0 --10
57
IT00166
2SA2013
VCE= --10V
7
3
100
10
2
5
1000
7
5
3
2
0.01 257 7 73 0.1 253253
1.0 10
5
IT00167
2SC5566
VCE=10V
5
3
2
7
5
3
2
7
5
3
2
100
10
0.1 23 37737755 1.0 210 25 100
5
IT00165
2SC5566
f=1MHz
5
3
2
7
5
3
2
2
7
5
3
100
10
--0.1 23 757523752375
--1.0 --10 --100
IT00164
2SA2013
f=1MHz
2SA2013 / 2SC5566
No.6307-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS
PC -- Tc
Case Temperature, Tc -- °C
Collector Dissipation, PC -- W
PC -- Tc
4.0
0
3.5
3.0
2.0
1.5
1.0
0.5
2.5
2006040 80 100 140120 160
IT01533
2SA2013 / 2SC5566