UPS120e3 1.0 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION The Microsemi UPS120e3 Powermite Schottky rectifier is RoHS compliant and offers low forward voltage characteristics with reverse blocking capabilities up to 20 Volt. They are ideal for surface mount applications that operate at high frequencies. In addition to its size advantages, Powermite(R) package features include a full metallic bottom that eliminates possibility of solder flux entrapment during assembly, and a unique locking tab acts as an efficient heat path from die to mounting plane for external heat sinking with very low thermal resistance junction to case (bottom). Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Low thermal resistance DO-216AA package RoHS Compliant with e3 suffix part number Guard-ring-die construction for transient protection Efficient heat path with Integral locking bottom metal tab Low forward voltage Full metallic bottom eliminates flux entrapment Compatible with automatic insertion Low profile-maximum height of 1mm Options for screening in accordance with MIL-PRF-19500 for JAN, JANTX, and JANTXV are available by adding MQ, MX, or MV prefixes respectively to part numbers. For example, designate MXUPS120e3 for a JANTX (consult factory for Tin-Lead plating). Optional 100% avionics screening available by adding MA prefix for 100% temperature cycle, thermal impedance and 24 hours HTRB (consult factory for Tin-Lead plating) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V RMS Reverse Voltage Average Rectified Output Current (at rated VR, TC =135C) Peak Repetitive Forward Current (at rated VR, square wave, 100kHz, TC=135C) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Voltage Rate of Change (rated VR, TJ =25C) V R (RMS) 14 V Io 1.0 A IFRM 2.0 A IFSM 50 A dv/dt 10,000 V/s Storage Temperature TSTG -55 to +150 C MECHANICAL & PACKAGING Junction Temperature TJ -55 to +125 C * CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0 * FINISH: Annealed matte-Tin plating over copper and readily solderable per MILSTD-750 method 2026 (consult factory for Tin-Lead plating) * POLARITY: See figure (left) * MARKING: S20* * WEIGHT: 0.016 grams (approx.) * Package dimension on last page * Tape & Reel option: 12 mm tape per Standard EIA-481-B, 3000 on 7 inch reel and 12,000 on 13" reel THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance Junction-to-case (bottom) Junction-to-ambient (1) RJC RJA 15 240 C/ Watt C/ Watt (1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print DO-216 APPLICATIONS/BENEFITS Switching and Regulating Power Supplies. Silicon Schottky (hot carrier) rectifier for minimal reverse voltage recovery Elimination of reverse-recovery oscillations to reduce need for EMI filtering Charge Pump Circuits Reduces reverse recovery loss with low IRM 2 Small 8.45 mm foot print (See mounting pad details next page) Microsemi Page 1 UPS140E3 See further details and dimensions on last page Copyright (c) 2007 6-26-2007 Rev C WWW . Microsemi .C OM (R) UPS120e3 1.0 A Schottky Barrier Rectifier Parameter Symbol Maximum Instantaneous Reverse Current (Note 1) VF IR TJ = 25C TJ =85C IF = 0.1 A IF = 1.0 A IF = 3.0 A 0.34 0.45 0.65 0.25 0.415 0.67 VR = 20 V VR = 10 V 0.40 0.10 25 18 Conditions Units WWW . Microsemi .C OM Maximum Forward Voltage (Note 1) See Figure 2 V mA Note: 1 Short duration test pulse used to minimize self - heating effect. PACKAGE & MOUNTING PAD DIMENSIONS DO-216 Package (All dimensions +/-.005 inches) MOUNTING PAD in inches UPS140E3 Copyright (c) 2007 6-26-2007 Rev C Microsemi Page 2 UPS120e3 1.0 A Schottky Barrier Rectifier WWW . Microsemi .C OM CHARTS AND GRAPHS FIGURE 1 FIGURE 2 Forward Power Dissipation * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJ max-r(t) Pr, Where r(t)=Rthja. For other power applications further calculations must be performed. Copyright (c) 2007 6-26-2007 Rev C Microsemi Page 3 UPS140E3 TJ = TJ max = r(t)(Pf+Pr) where r(t) = thermal impedance under given conditions. Pf = forward power dissipation, and Pr = reverse power dissipation UPS120e3 1.0 A Schottky Barrier Rectifier WWW . Microsemi .C OM FIGURE 3 - Thermal Impedance Junction to Case (bottom) FIGURE 4 - Thermal Impedance Junction to Ambient UPS140E3 Copyright (c) 2007 6-26-2007 Rev C Microsemi Page 4