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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
RF MEMS
Charge
Pump/
Decoder
ANT
VDD V3 V2 V1
RF5
RF3
RF1156
RF1
RF2
RF4
RF1156
BROADBAND LOW POWER SP5T SWITCH
The RF1156 is a single-pole five-throw (SP5T) switch designed for general purpose
switching applications which require very low insertion loss and moderate power
handling capability.
The RF1156 is ideally suited for battery operated applications requiring high perfor-
mance switching with very low DC power consumption. The RF1156 features very
low insertion loss with excellent linearity performance down to 1.8V control voltage.
Additionally, RF1156 includes integrated decoding logic, allowing just three control
lines needed for switch control. The RF1156 is packaged in a very compact
3mmx3mmx0.85mm, 16-pin, leadless QFN package. No DC-blocking capacitors
are required on RF paths, unless DC is applied external to the device ports.
Features
450MHz to 2.69GHz Opera-
tion
Very Low Insertion Loss:
Cell Band 0.40dB
PCS Band 0.55dB
High Isolation:
Cell Band 30dB
PCS Band 22dB
Compatible With Low Voltage
Logic: (VHIGH=1.8V)
Excellent Linearity Perfor-
mance:
Cell Band 106dBm
PCS Band 108dBm
Small Solution Size
Applications
Cellular Handset Applications
Cellular Infrastructure Appli-
cations
RF1156 Broadband LOW Power SP5T Switch
RF1156PCBA-410 Fully Assembled Evaluation Board
DS110802
Package Style: QFN, 16-pin, 3mmx3mm
2 of 8
RF1156
DS110802
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter Rating Unit
VDD, V1, V2, V3 6.0 V
Maximum Input Peak Power
Momentary Infrequent Occurance
27 at 1:1 VSWR
24 at 6:1 VSWR
dBm
Maximum Continuous Power (PAR <4) 23 at 1:1 VSWR
20 at 6:1 VSWR
dBm
Operating Temperature -30 to +90 °C
Storage Temperature -65 to +125 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Operating Characteristics
Active Mode:VHIGH>1.8V,VLOW <0.4V;
VDD=2.75V; Temp=25°C; PIN =16dBm unless
otherwise specified.
Insertion Loss
RF1-ANT, RF2-ANT, RF3-ANT,
RF4-ANT, RF5-ANT
0.40 0.55 dB 450MHz to 960MHz
0.45 0.60 dB 960 MHz to 1710 MHz
0.55 0.75 dB 1710 MHz to 1990 MHz
0.65 0.85 dB 1990 MHz to 2500 MHz
0.65 0.95 dB 2500 MHz to 2690 MHz
Isolation
RF1-ANT, RF2-ANT, RF3-ANT,
RF4-ANT, RF5-ANT
26 30 dB 450MHz to 960MHz
21 24 dB 960 MHz to 1710 MHz
20 22 dB 1710 MHz to 1990 MHz
19 21 dB 1990 MHz to 2500 MHz
18 21 dB 2500 MHz to 2690 MHz
Return Loss
RF1-ANT, RF2-ANT, RF3-ANT,
RF4-ANT, RF5-ANT
18 20 dB 450MHz to 2690MHz, All RF ports in Insertion
Loss state.s
Harmonics
Second Harmonic (2F0)7083 dBcF
0=880MHz
70 84 dBc F0=1880MHz
Third Harmonic (3F0)7079 dBcF
0=880MHz
70 75 dBc F0=1880MHz
IIP2
RF1-ANT, RF2-ANT, RF3-ANT,
RF4-ANT, RF5-ANT (Cell)
103.5 106 dBm Tone 1: 824MHz @ 16dBm, Tone 2: 1693MHz
@ -20dBm, Receive Freq: 869MHz
RF1-ANT, RF2-ANT, RF3-ANT,
RF4-ANT, RF5-ANT (AWS)
100 108 dBm Tone 1: 1710MHz @ 16dBm, Tone 2:
3820MHz @ -20dBm, Receive Freq: 2110MHz
RF1-ANT, RF2-ANT, RF3-ANT,
RF4-ANT, RF5-ANT (PCS)
100 108 dBm Tone 1: 1850 MHz @ 16dBm, Tone 2:
3780MHz @ -20dBm, Receive Freq: 1930MHz
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EU Directive2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 8
RF1156
DS110802
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Parameter Specification Unit Condition
Min. Typ. Max.
IIP3
RF1-ANT, RF2-ANT, RF3-ANT,
RF4-ANT, RF5-ANT (Cell)
58 61 dBc Tone 1: 836.5 MHz @ 16dBm,
Tone 2: 791.5MHz @ -20dBm
Receive Freq: 881.5MHz
RF1-ANT, RF2-ANT, RF3-ANT,
RF4-ANT, RF5-ANT (IMT)
58 61 dBc Tone 1: 1950MHz @ 16dBm,
Tone 2: 1760MHz @ -20dBm
Receive Freq: 2140MHz
0.1dB Compression (P0.1dB)
29 dBm f=900MHz
28 dBm f=1800MHz
Switching Speed
0.5 1.0 us 50% control to 10%/90%
Supply and Control Signal
Characteristics
Switch Supply Voltage (VDD) 2.50 2.75 3.30 V Continuously
Control Voltage
VHIGH 1.3 1.8 2.9 V
VLOW 00.45V
Control Current 0.018 1.5 uA PIN=16dBm
Supply Current 0.6 0.9 mA PIN=16dBm
4 of 8
RF1156
DS110802
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Pin Function Description
1VDD
Supply.
2V3
Control Signal V3.
3V2
Control Signal V2.
4V1
Control Signal V1.
5GND
Ground.
6RF4
RF Output 4.
7GND
Ground.
8RF3
RF Output 3.
9RF5
RF Output 5.
10 GND Ground.
11 ANT RF input. Connected to antenna.
12 GND Ground.
13 RF1 RF Output 1.
14 GND Ground.
15 RF2 RF Output 2.
16 NC Can be left floating or grounded.
6 of 8
RF1156
DS110802
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
General Information
Control Logic
The switch is operable in five states (see Truth table, below). The switch is designed for two modes: Active and Stand-by. These
modes are controlled by the VDD signal. When VDD is high, the switch is active.
Control Logic
Electrical Test Methods
The electrical parameters for the switch were measured on test Evaluation Board provided by the switch supplier. The test Eval-
uation Board includes means for decoupling RF signals from control signal port (shunt capacitor at control signal ports).
All measurements are done with calibration plane at switch pins. The effect of test board losses and phase delay has been
removed from the results.
Mode V1 V2 V3
ANT-RF1 Low Low Low
ANT-RF2 Low Low High
ANT-RF3 Low High Low
ANT-RF4 Low High High
ANT-RF5 High Low X
7 of 8
RF1156
DS110802
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Application Schematic
Application Diagram and Guidelines
The decoupling capacitors are optional and, if necessary, may be used for noise reduction. Decoupling capacitors on the con-
trol pins protect the control circuitry from possible RF leakage. DC Blocking capacitors are not needed on the RF paths as there
is no DC on the RF paths, however care should be taken to ensure that DC is not injected into the switch from external circuitry.
The switch has a supply input to feed the built-in logic decoding.
1
2
3
4
12
11
10
9
16 15 14 13
5 6 7 8
VDD
V3
V2
V1
C4
100 pF
C3
100 pF
C2
100 pF
C1
10 nF
J4
RF4
J3
RF3
22
J5
RF5
J6
ANT
22
J1
RF1
2
2
J2
RF2
P1
6
5
4
3
2
1
GND
VDD
V3
V2
V1
HDR_1X6
GND
8 of 8
RF1156
DS110802
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Evaluation Board Layout
Board Thickness 0.0658”, Board Material FR-4 and Rogers R4003 8 mil top layer
Component Layer Topside RF Layer Inner Layer 1
Inner Layer 2 Ground Plane Layer
