BUX48 & BUX48A
Silicon NPN Transistors
Audio Power Amp, Switch
TO−3 Type Package
Description:
The BUX48 and BUX48A are silicon NPN power transistors in a TO−3 type package designed for high
voltage, high−speed power switching regulators, converters, inverters, and motor control system ap-
plications
Features:
DCollector−Emitter Sustaining Voltage:
VCEO(sus) = 400V Min (BUX48)
VCEO(sus) = 450V Min (BUX48A)
DCollector−Emitter Saturation Voltage: VCE(sat) = 1.5V Max
DSwitching Time: tf = 0.8s Max
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
BUX48 400V.....................................................................
BUX48A 450V...................................................................
Collector−Emitter Voltage (VBE = −2.5V), VCEX
BUX48 800V.....................................................................
BUX48A 1000V..................................................................
Emitter−Base Voltage, VEBO 7V..........................................................
Collector Current, IC
Continuous 15A..................................................................
Peak 30A.......................................................................
Base Current, IB4A....................................................................
Total Power Dissipation (TC = +25C), PD175W...........................................
Derate Above 25C 1.0W/C.......................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.0C/W.....................................
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage
BUX48 VCEO(sus) IC = 100mA, IB = 0, L = 25mH, Note 1 400 − − V
BUX48A 450 − − V
Collector Cutoff Current ICEX VCE = VCEX, VEB = −2.5V − − 0.2 mA
VCE = VCEX, VEB = −2.5V, TC = +125C− − 2.0 mA
Collector Cutoff Current ICER VCE = VCEX, RBE < 10− − 0.5 mA
VCE = VCEX, RBE < 10, TC = +125C− − 4.0 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 1.0 mA
Note 1. Pulse Test: Pulse Width = 300ms, Duty Cycle 2%.
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
Collector−Emitter Saturation Voltage
BUX48 VCE(sat) IC = 10A, IB = 2A − − 1.5 V
IC = 15A, IB = 3A − − 5.0 V
BUX48A IC = 8A, IB = 1.6A − − 1.5 V
IC = 12A, IB = 2.4A − − 5.0 V
Base−Emitter Saturation Voltage
BUX48 VBE(sat) IC = 10A, IB = 2A − − 1.6 V
BUX48A IC = 8A, IB = 1.6A − − 1.6 V
Switching Characteristics
BUX48
Turn On Time ton VCC = 150V, IC = 10A, IB1 = 2A,
IB2 = −2A
− − 1.0 s
Storage Time ts− − 3.0 s
Fall Time tf− − 0.8 s
BUX48A
Turn On Time ton VCC = 150V, IC = 8A, IB1 = 1.6A,
IB2 = −1.6A
− − 1.0 s
Storage Time ts− − 3.0 s
Fall Time tf− − 0.8 s
Note 1. Pulse Test: Pulse Width = 300ms, Duty Cycle 2%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
