HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E
5962-93140
90 V/1.0 Ω, Hermetically Sealed, Power MOSFET Optocoupler
Data Sheet
Features
Dual Marked with Device Part Number and DSCC
Standard Microcircuit Drawing
ac/dc Signal &Power Switching
Compact Solid-State Bidirectional Switch
Manufactured and Tested on a MIL-PRF-38534Certi ed
Line
QML-38534
MIL-PRF-38534 Class H
Modi ed Space Level Processing Available (Class E)
Hermetically Sealed 8-Pin Dual In-Line Package
Small Size and Weight
Performance Guaranteed over -55°C to 125°C
Connection A0.8 A, 1.0 Ω
Connection B1.6 A, 0.25 Ω
1500 Vdc Withstand Test Voltage
High Transient Immunity
5 Amp Output Surge Current
Applications
Military and Space
High Reliability Systems
Standard 28 Vdc and 48 Vdc Load Driver
Standard 24 Vac Load Driver
Aircraft Controls
ac/dc Electromechanical and Solid State Relay
Replacement
I/O Modules
Harsh Industrial Environments
Description
The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and
SMD 5962-93140 are single channel power MOSFET opto-
couplers, constructed in eight-pin, hermetic, dual-in-line,
ceramic packages. The devices operate exactly like a solid-
state relay.
The products are capable of operation and storage over
the full military temperature range and may be pur-
chased as a standard product (HSSR-7110), with full MIL-
PRF-38534 Class H testing (HSSR-7111 and HSSR- 7112),
with MIL-PRF-38534 Class E testing (Class K with excep-
tions) (HSSR-711E) or from the DSCC Standard Microcircuit
Drawing (SMD) 5962-93140. Details of the Class E program
may be found on page 11 of this datasheet.
Functional Diagrams
CONNECTION A
AC/DC CONNECTION
2
3
4
1
6
7
5
8
NC
NC
+
-
+
-
CONNECTION B
DC CONNECTION
IF
VF
IO
VO
2
3
4
1
6
7
5
8
NC
NC
+
-
+
-
IF
VF
IO
VO
TRUTH TABLE
INPUT OUTPUT
H CLOSED
L OPEN
2
All devices are manufactured and tested on a MIL-
PRF-38534 certi ed line and are included in the DSCC
Quali ed Manufacturers List, QML-38534 for Hybrid Micro-
circuits. Each device contains an AlGaAs light emitting di-
ode optically coupled to a photovoltaic diode stack which
drives two discrete power MOSFETs. The device operates
as a solid-state replacement for single-pole, normally
open, (1 Form A) relay used for general purpose switching
of signals and loads in high reliability applications.
The devices feature logic level input control and very low
output on-resistance, making them suitable for both ac
and dc loads. Connection A, as shown in the Functional
Diagram, allows the device to switch either ac or dc loads.
Connection B, with the polarity and pin con guration as
shown, allows the device to switch dc loads only. The ad-
vantage of Connection B is that the on-resistance is sig-
ni cantly reduced, and the output current capability in-
creases by a factor of two.
The devices are convenient replacements for mechanical
and solid state relays where high component reliability
with standard footprint lead con guration is desirable.
Devices may be purchased with a variety of lead bend
and plating options. See Selection Guide table for details.
Standard Microcircuit Drawing (SMD) parts are available
for each package and lead style.
The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and
SMD 5962-93140 are designed to switch loads on 28 Vdc
power systems. They meet 80 V surge and ± 600 V spike
requirements.
CAUTION: Maximum Switching Frequency – Care should be taken during repetitive switching of loads so as not to exceed the
maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature.
Selection Guide – Lead Conguration Options
Avago Technologies’s Part Number and Options
CommercialHSSR-7110
MIL-PRF-38534 Class H HSSR-7111 HSSR-7112
MIL-PRF-38534 Class E HSSR-711E
Standard Lead Finish Gold Plate Gold Plate Gold Plate
Solder Dipped*Option #200 Option -200 Option -200
Butt Joint/Gold Plate Option #100 Option -100
Gull Wing/Soldered*Option #300 Option -300
Crew Cut/Gold Plate Option #600
SMD Part Number
Prescript for all below 5962- 5962-
Either Gold or Soldered 9314001HPX9314002HPX9314001EPX
Gold Plate 9314001HPC9314002HPC9314001EPC
Solder Dipped*9314001HPA9314002HPA9314001EPA
Butt Joint/Gold Plate 9314001HYC 9314002HYC
Butt Joint/Soldered*9314001HYA 9314002HYA
Gull Wing/Soldered*9314001HXA 9314002HXA
Crew Cut/Gold Plate 9314001HZC
Crew Cut/Soldered*9314001HZA
* Solder Contains Lead
3
Thermal Resistance
Maximum Output MOSFET Junction to Case – θJC =
15°C/W
ESD Classi cation
(MIL-STD-883, Method 3015) .......................... ( ), Class 2
Outline Drawing
8-pin DIP Through Hole
Device Marking
3.81 (0.150)
MIN.
4.32 (0.170)
MAX.
9.40 (0.370)
9.91 (0.390)
0.51 (0.020)
MAX.
2.29 (0.090)
2.79 (0.110)
0.51 (0.020)
MIN.
0.76 (0.030)
1.27 (0.050)
8.13 (0.320)
MAX.
7.36 (0.290)
7.87 (0.310)
0.20 (0.008)
0.33 (0.013)
7.16 (0.282)
7.57 (0.298)
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
COMPLIANCE INDICATOR, *
DATE CODE, SUFFIX
A QYYWWZ
XXXXXX
XXXXXXX
XXX XXX
50434
COUNTRY OF MFR.
AVAGO CAGE CODE*
AVAGO
DESIGNATOR
DSCC SMD*
PIN ONE/
ESD IDENT
AVAGO P/N
DSCC SMD*
* QUALIFIED PARTS ONLY
(IF NEEDED)
Absolute Maximum Ratings
Parameter SymbolMin. Max. UnitsNote
Storage Temperature RangeTS-65° +150°C
Operating Ambient Temperature TA-55° +125° C
Junction Temperature TJ+150°C
Operating Case Temperature TC+145° C 1
Lead Solder Temperature
(1.6 mm below seating plane)
260° for 10 sC
Average Input CurrentIF20mA
Peak Repetitive Input Current
(Pulse Width < 100 ms; duty cycle < 50%)
IFPK40mA
Peak Surge Input Current
(Pulse Width < 0.2 ms; duty cycle < 0.1%)
IFPK surge100 mA
Reverse Input VoltageVR5V
Average Output Current - Figure 2
Connection A
Connection B
IO0.8
1.6
A
A
Single Shot Output Current - Figure 3
Connection A (Pulse width < 10 ms)
Connection B (Pulse width < 10 ms)
IOPK surge5.0
10.0
A
A
Output Voltage
Connection A
Connection B
VO-90
0
90
90
V
V
Average Output Power Dissipation - Figure 4 800 mW2
4
Option Description
100 Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel
product.
200 Lead nish is solder dipped rather than gold plated. This option is available on commercial and hi-rel product. DSCC Drawing part
numbers contain provisions for lead nish.
300 Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on commercial and
hi-rel product. This option has solder dipped leads.
600 Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel
product.
Recommended Operating Conditions
Hermetic Optocoupler Options
Note: Dimensions in millimeters (inches).
Parameter SymbolMin. Max. UnitsNote
Input Current (on) IF(ON) 520mA10
Input Current (on) IF(ON) 10 20mA11
Input Voltage (o) VF(OFF) 00.6V
Operating Temperature TA-55° +125° C
1.14 (0.045)
1.40 (0.055)
4.32 (0.170)
MAX.
0.51 (0.020)
MAX.
2.29 (0.090)
2.79 (0.110)
0.51 (0.020)
MIN.
7.36 (0.290)
7.87 (0.310)
0.20 (0.008)
0.33 (0.013)
0.51 (0.020)
MIN.
4.57 (0.180)
MAX.
0.51 (0.020)
MAX.
2.29 (0.090)
2.79 (0.110)
1.40 (0.055)
1.65 (0.065) 9.65 (0.380)
9.91 (0.390)
5˚ MAX.
4.57 (0.180)
MAX.
0.20 (0.008)
0.33 (0.013)
3.81 (0.150)
MAX.
1.02 (0.040)
TYP.
2.29 (0.090)
2.79 (0.110)
0.51 (0.020)
MIN.
7.36 (0.290)
7.87 (0.310)
0.20 (0.008)
0.33 (0.013)
Note: Solder contains lead.
5
Electrical Specications
TA =-55°C to +125°C, unless otherwise specied. See note 9.
Parameter Sym.
Group A,
Sub-group Test Conditions Min. Typ.* Max. UnitsFig. Notes
Output Withstand
Voltage
|VO(OFF)|1, 2, 3 VF = 0.6 V, IO = 10 PA90 110 V 5
Output On-Resistance
Connection A
R(ON) 1, 2, 3I
F = 10 mA, IO = 800 mA,
(pulse duration ≤ 30 ms)
0.40 1.0 :6, 73, 11
IF = 5 mA, IO = 800 mA,
(pulse duration ≤ 30 ms)
1.0 3, 10
Output On-Resistance
Connection B
R(ON) 1, 2, 3I
F = 10 mA, IO = 1.6 A,
(pulse duration ≤ 30 ms)
0.120.25 :6, 73, 11
IF = 5 mA, IO = 1.6 A,
(pulse duration ≤ 30 ms)
0.25 3, 10
Output Leakage
Current
IO(OFF) 1, 2, 3 VF = 0.6 V, VO = 90 V10
-4 10 PA8
Input Forward
Voltage
VF1, 2, 3I
F = 10 mA1.0 1.24 1.7V911
IF = 5 mA10
Input Reverse
Breakdown Voltage
VR1, 2, 3I
R = 100 PA5.0 V
Input-Output
Insulation
II-O1RH ≤ 65%, t = 5 s,
VI-O = 1500 Vdc, TA = 25°C
1.0 PA4, 5
Turn On Time tON9, 10, 11 IF = 10 mA, VDD = 28 V,
IO = 800 mA
1.25 6.0 ms1,
10, 11,
12, 13
11
IF = 5 mA, VDD = 28 V,
IO = 800 mA
6.0 10
Turn O Time tOFF 9, 10, 11 IF = 10 mA, VDD = 28 V,
IO = 800 mA
0.020.25 ms1,
10, 14, 15
11
IF = 5 mA, VDD = 28 V,
IO = 800 mA
0.25 10
Output Transient
Rejection
dVo
dt
9V
PEAK = 50 V, CM = 1000 pF,
CL = 15 pF, RM ≥ 1 M:
1000 V/Ps17
Input-Output
Transient Rejection
dVio
dt
9V
DD = 5 V, VI-O(PEAK) = 50 V,
RL = 20 k:, CL = 15 pF
500 V/Ps18
6
Typical Characteristics
All typical values are at TA = 25°C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specied.
Notes:
1. Maximum junction to case thermal resistance for the device is 15°C/W, where case temperature, TC, is measured at the center of the package
bottom.
2. For rating, see Figure 4. The output power PO rating curve is obtained when the part is handling the maximum average output current IO as
shown in Figure 2.
3. During the pulsed RON measurement (IO duration <30 ms), ambient (TA) and case temperature (TC) are equal.
4. Device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together.
5. This is a momentary withstand test, not an operating condition.
6. For a faster turn-on time, the optional peaking circuit shown in Figure 1 may be implemented.
7. VOS is a function of IF, and is dened between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a stable ambient (free of tem-
perature gradients).
8. Zero-bias capacitance measured between the LED anode and cathode.
9. Standard parts receive 100% testing at 25°C (Subgroups 1 and 9). SMD, Class H and Class E parts receive 100% testing at 25°C, 125°C and -55°C
(Subgroups 1 and 9, 2 and 10, 3 and 11 respectively).
10. Applies to HSSR-7112 and 5962-9314002Hxx devices only.
11. Applies to HSSR-7110, HSSR-7111, HSSR-711E, 5962-9314001Hxx and 5962-9314001Exx devices only.
Parameter SymbolTest Conditions Typ. UnitsFig. Notes
Output O-Capacitance CO(OFF) VO = 28 V, f = 1 MHz 145 pF16
Output Oset Voltage|VOS|I
F = 10 mA, IO = 0 mA2PV19 7
Input Diode Temperature Coecient'VF/'TAIF = 10 mA-1.4mV/°C
Input Capacitance CIN VF = 0 V, f = 1MHz 20pF8
Input-Output Capacitance CI-OVI-O = 0 V, f = 1 MHz 1.5pF4
Input-Output Resistance RI-OVI-O = 500 V, t = 60 s 1013:4
Turn On Time With Peaking tONIFPK = 100 mA, IFSS = 10 mA
VDD = 28 V, IO = 800 mA
0.22 ms16
R1 = REQUIRED CURRENT LIMITING RESISTOR
FOR IF (ON) = 10 mA.
R2 = PULL-UP RESISTOR FOR VF (OFF) < 600 mV;
IF (VCC-VOH ) < 600 mV, OMIT R2.
R3, C = OPTIONAL PEAKING CIRCUIT.
TYPICAL VALUES
R3
(Ω)
IF (PK)
(mA)
HSSR-7110
tON (ms)
-
330
100
33
10 (NO PK)
20
40
100
2.0
1.0
0.48
0.22
* USE SECOND GATE IF IF (PK) > 50 mA
REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR VCC
IN
1/4 54ACTOO*
1/4 54ACTOO
VCC (+5V)
R2
1200 Ω
R1
330 Ω
R3
C
15 μF
HSSR-7110
2
3
4
1
6
7
5
8
-
IF
VF
+
Figure 1. Recommended Input Circuit.
7
Figure 2. Maximum Average Output Current Rat-
ing vs. Ambient Temperature.
Figure 3. Single Shot (non-repetitive) Output
Current vs. Pulse Duration.
Figure 4. Output Power Rating vs. Ambient
Temperature.
Figure 6. Normalized Typical Output Resistance
vs. Temperature.
Figure 5. Normalized Typical Output Withstand
Voltage vs. Temperature.
Figure 7. Typical On State Output I-V Character-
istics.
Figure 9. Typical Input Forward Current vs. Input
Forward Voltage.
Figure 8. Typical Output Leakage Current vs.
Temperature.
0
-55
T
A
- AMBIENT TEMPERATURE - ˚C
1.0
0.4
15512595655-25
0.6
0.8
0.2
35
I
O
- OUTPUT CURRENT - A
CONNECTION - A
I
F
10 mA
Q
CA
= 40˚ C/W
Q
CA
= 80˚ C/W
I
OPK
SURGE - OUTPUT CURRENT - A
3
1000
PULSE DURATION - ms
8
5
400200
6
7
4
9
10
11
12
600 800
I
F
10 mA
CONNECTION-A
CONNECTION-B
10
0
-55
T
A
- AMBIENT TEMPERATURE - ˚C
1.0
0.4
15512595655-25
0.6
0.8
0.2
35
P
O
- OUTPUT POWER DISSIPATION - W
CONNECTION - A
I
F
10 mA
Q
CA
= 40˚ C/W
Q
CA
= 80˚ C/W
V
F
= 0.6 V
I
O
= 10 μA
-55
T
A
- AMBIENT TEMPERATURE - ˚C
12595655-25
0.92 35
NORMALIZED TYPICAL OUTPUT
WITHSTAND VOLTAGE
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
1.10
NORMALIZED TYPICAL
OUTPUT RESISTANCE
-55
T
A
- AMBIENT TEMPERATURE - ˚C
12595655-25
0.6 35
0.8
1.0
1.2
1.4
1.6
1.8
CONNECTION - A
I
F
10 mA
I
O
= 800 mA
(PULSE DURATION 30 ms)
V
O
- OUTPUT VOLTAGE - V
I
O
- OUTPUT CURRENT - A
-0.6 0.60.40.2-0.2-0.4
-0.4
0
-0.2
0
0.2
0.4
0.6
0.8
-0.8
-0.6
CONNECTION - A
I
O
10 mA
I
O
(PULSE DURATION
30 ms)
T
A
= 25˚C
T
A
= 125˚C
T
A
= -55˚C
-11
10
-7
10
-8
10
-9
10
-10
10
I
O(OFF)
- OUTPUT LEAKAGE CURRENT - A
T
A
- TEMPERATURE - ˚C
125956520 35
CONNECTION A
V
F
= 0.6 V
V
O
= 90 V
TA = 25˚C
TA = 125˚C
TA = -55˚C
VF - INPUT FORWARD VOLTAGE - V
0.6 1.61.41.20.80.4 1.0
-1
10
-2
10
-4
10
-3
10
-5
10
-6
10
IF - INPUT FORWARD CURRENT - A
8
Figure 10. Switching Test Circuit for tON, tOFF.
Figure 11. Typical Turn On Time vs. Temperature. Figure 12. Typical Turn On Time vs. Input Current.Figure 13. Typical Turn On Time vs. Voltage.
Figure 14. Typical Turn O Time vs. Temperature. Figure 15. Typical Turn O Time vs. Input Cur-
rent.
Figure 16. Typical Output OCapacitance vs.
Output Voltage.
TA - TEMPERATURE - ˚C
0.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
2.4
2.6
TON - TURN ON TIME - ms
-55 12595655-25 35
CONNECTION A
IF = 10 mA
VDD = 28 V
IO = 800 mA
IF - INPUT CURRENT - mA
10 15 205
0.2
2.2
1.8
1.4
1.0
0.6
2.6
3.0
TON - TURN ON TIME - ms
CONNECTION A
VDD = 28 V
IO = 800 mA
TA = 25˚C
VDD - VOLTAGE - V
10 30200
0
1.0
0.8
0.6
0.4
0.2
1.2
1.4
TON - TURN ON TIME - ms
908070605040
2.0
1.8
1.6
CONNECTION - A
IF = 10 mA
IO = 800 mA
TA = 25˚C
T
A
-TEMPERATURE - ˚C
13.2
14.6
14.4
14.2
14.0
13.8
13.6
13.4
14.8
15.0
T
OFF
- TURN OFF TIME - μs
-55 12595655-25 35
CONNECTION A
I
F
= 10 mA
V
DD
= 28 V
I
O
= 800 mA
5
40
35
30
25
20
15
10
45
T
OFF
- TURN OFF TIME - μs
I
F
- INPUT CURRENT - mA
10 15 205
CONNECTION A
V
DD
= 28 V
I
O
= 800 mA
T
A
= 25˚C
V
O(OFF)
- OUTPUT VOLTAGE - V
515100
120
320
280
240
200
160
360
400
302520
440
C
O(OFF)
- OUTPUT OFF CAPACITANCE - pF
CONNECTION A
f = 1 MHz
T
A
= 25˚C
9
Figure 17. Output Transient Rejection Test Circuit.
MONITOR
NODE
-
PULSE
GENERATOR
VPEAK
+
CM INCLUDES PROBE AND FIXTURE CAPACITANCE
RM INCLUDES PROBE AND FIXTURE RESISTANCE
CMRMINPUT OPEN
VM
HSSR-7110
2
3
4
1
6
7
5
8
-
IF
VF
+
VPEAK
tf
tr
90%
10%
90%
10%
VM
OVERSHOOT ON VPEAK IS TO BE a 10%.
dt
dVOOR
=tf
(0.8) V (PEAK)
tr
(0.8) V (PEAK)
(MAX) a 5 V
VI-O
PULSE
GENERATOR
+
(C L INCLUDES PROBE PLUS
FIXTURE CAPACITANCE )
VO
CL
S1
VDD
VIN
B
A
RL
-
HSSR-7110
2
3
4
1
6
7
5
8
-
IF
VF
+
OVERSHOOT ON VI-O(PEAK) IS TO BE a 10%
tf
tr
dt
dV I-O OR
=(0.8) V I-O(PEAK)
(0.8) V I-O(PEAK)
tf
tr
90%
10%
90%
10%
VI-O(PEAK)
VO(OFF)
VO(OFF)
(min) q 3.25 V
S1 AT A (VF = 0 V)
VO(ON)
(max) 0.8
VO(ON)
S1 AT B (IF = 10 mA)11 OR (IF
= 5 mA)10
Figure 18. Input-Output Transient Rejection Test Circuit.
10
Applications Information
Thermal Model
The steady state thermal model for the HSSR-7110 is
shown in Figure 21. The thermal resistance values given
in this model can be used to calculate the temperatures
at each node for a given operating condition. The thermal
resistances between the LED and other internal nodes
are very large in comparison with the other terms and
are omitted for simplicity. The components do, however,
interact indirectly through θCA, the case-to-ambient
thermal resistance. All heat generated  ows through θCA,
which raises the case temperature TC accordingly. The val-
ue of θCA depends on the conditions of the board design
and is, therefore, determined by the designer.
The maximum value for each output MOSFET junction-
to-case thermal resistance is speci ed as 15°C/W . The
thermal resistance from FET driver junction-to-case is also
15°C/W/W. The power dissipation in the FET driver, how-
ever, is negligible in comparison to the MOSFETs.
On-Resistance and Rating Curves
The output on-resistance, RON, speci ed in this data sheet,
is the resistance measured across the output contact
when a pulsed current signal (IO = 800 mA) is applied to
the output pins. The use of a pulsed signal (≤ 30 ms) im-
plies that each junction temperature is equal to the am-
bient and case temperatures. The steadystate resistance,
RSS, on the other hand, is the value of the resistance mea-
sured across the output contact when a DC current signal
is applied to the output pins for a duration su cient to
reach thermal equilibrium. RSS includes the e ects of the
temperature rise of each element in the thermal model.
Rating curves are shown in Figures 2 and 4. Figure 2 speci-
es the maximum average output current allowable for a
given ambient temperature. Figure 4 speci es the output
power dissipation allowable for a given ambient tempera-
ture. Above 55°C (for θCA = 80°C/W) and 107°C (for θCA =
40°C/W/W), the maximum allowable output current and
power dissipation are related by the expression RSS =
PO(max)/ (IO(max))2 from which RSS can be calculated. Stay-
ing within the safe area assures that the steady-state junc-
tion temperatures remain less than 150°C. As an example,
for TA = 95°C and θCA = 80°C/W , Figure 2 shows that the
output current should be limited to less than 610 mA. A
check with Figure 4 shows that the output power dissipa-
tion at TA = 95°C and IO = 610 mA, will be limited to less
than 0.35 W. This yields an RSS of 0.94 Ω.
Figure 19. Voltage Oset Test Setup.
Figure 20. Burn-In Circuit.
Figure 21. Thermal Model.
Tje = LED JUNCTION TEMPERATURE
Tjf1 = FET 1 JUNCTION TEMPERATURE
Tjf2 = FET 2 JUNCTION TEMPERATURE
Tjd = FET DRIVER JUNCTION TEMPERATURE
TC = CASE TEMPERATURE (MEASURED AT CENTER
OF PACKAGE BOTTOM)
TA = AMBIENT TEMPERATURE (MEASURED 6" AWAY
FROM THE PACKAGE)
QCA = CASE-TO-AMBIENT THERMAL RESISTANCE
ALL THERMAL RESISTANCE VALUES ARE IN ˚C/W
Tje
QCA
104 15
TA
TC
Tjd
Tjf1
1515
Tjf2
NOTE:
IN ORDER TO DETERMINE V
BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING
CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE
DERATING REQUIREMENTS AS SHOWN.
OUT
CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST
Q
CA
, DETERMINE THE
2
3
4
1
6
7
5
8
RIN
VIN
5.5 V
1.0 7
ROUT
VO (SEE NOTE)
200 7
1.0 7
ROUT
HSSR-7110
On-Resistance and Rating Curves
VOS
+
DIGITAL
NANOVOLTMETER
ISOTHERMAL CHAMBER
HSSR-7110
2
3
4
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Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-1944EN
AV02-3801EN - September 12, 2012
Design Considerations for Replacement of Electro-
Mechanical Relays
The HSSR-7110 family can replace electro-mechanical re-
lays with comparable output voltage and current ratings.
The following design issues need to be considered in the
replacement circuit.
Input Circuit: The drive circuit of the electro-mechanical
relay coil needs to be modi ed so that the average for-
ward current driving the LED of the HSSR- 7110 does not
exceed 20 mA. A nominal forward drive current of 10 mA
is recommended. A recommended drive circuit with 5 volt
VCC and CMOS logic gates is shown in Figure 1. If higher
VCC voltages are used, adjust the current limiting resistor
to a nominal LED forward current of 10 mA. One impor-
tant consideration to note is that when the LED is turned
o , no more than 0.6 volt forward bias should be applied
across the LED. Even a few microamps of current may be
su cient to turn on the HSSR- 7110, although it may take
a considerable time. The drive circuit should maintain at
least 5 mA of LED current during the ON condition. If the
LED forward current is less than the 5 mA level, it will cause
the HSSR-7110 to turn on with a longer delay. In addition,
the power dissipation in the output power MOSFETs in-
creases, which, in turn, may violate the power dissipation
guidelines and a ect the reliability of the device.
Output Circuit: Unlike electromechanical relays, the de-
signer should pay careful attention to the output on-resis-
tance of solid state relays. The previous section, “On- Re-
sistance and Rating Curves” describes the issues that need
to be considered. In addition, for strictly dc applications
the designer has an advantage using Connection B which
has twice the output current rating as Connection A. Fur-
thermore, for dc-only applications, with Connection B the
on-resistance is considerably less when compared to Con-
nection A.
Output over-voltage protection is yet another important
design consideration when replacing electro-mechanical
relays with the HSSR-7110. The output power MOSFETs
can be protected using Metal oxide varistors (MOVs) or
TransZorbs against voltage surges that exceed the 90 volt
output withstand voltage rating. Examples of sources of
voltage surges are inductive load kickbacks, lightning
strikes, and electro-static voltages that exceed the speci-
cations on this data sheet. For more information on out-
put load and protection refer to Application Note 1047.
References:
1. Application Note 1047, “Low On-Resistance Solid State
Relays for High Reliability Applications.”
2. Reliability Data for HSSR-7110.
MOV is a registered trademark of GE/RCA Solid State.
TransZorb is a registered trademark of General Semicon-
ductor.
MIL-PRF-38534 Class H, Class E and DSCC SMD Test
Program
Class H:
Avago Technologies’ s Hi-Rel Optocouplers are in compli-
ance with MIL-PRF-38534 Class H. Class H devices are also
in compliance with DSCC drawing 5962-93140.
Testing consists of 100% screening and quality confor-
mance inspection to MIL-PRF-38534.
Class E:
Class E devices are in compliance with DSCC drawing
5962-9314001Exx. Avago Technologies has de ned the
Class E device on this drawing to be based on the Class K
requirements of MIL-PRF-38534 with exceptions. The ex-
ceptions are as follows:
1. Nondestructive Bond Pull, Test method 2023 of MIL-
STD-883 in device screening is not required.
2. Particle Impact Noise Detection (PIND), Test method
2020 of MIL-STD-883 in device screening and group C
testing is not required.
3. Die Shear Strength, Test method 2019 of MIL-STD-883
in group B testing is not required.
4. Internal Water Vapor Content, Test method 1018 of MIL-
STD-883 in group C testing is not required.
5. Scanning Electron Microscope (SEM) inspections, Test
method 2018 of MIL-STD-883 in element evaluation is
not required.