BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
1 Version: H2002
410mW 2% Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.4V to 75V
● VZ Tolerance Selection of ± 2%
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOD-123
● Molding compound: UL flammability classification
rating 94V-0
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 10.54mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ 2.4-75 V
Test current IZT 5-2 mA
Ptot 410 mW
VF at IF=10mA 0.9 V
TJ Max. 150 °C
Package SOD-123
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Forward voltage @ IF=10mA VF 0.9 V
Total power dissipation Ptot 410 mW
Junction temperature range TJ -55 to +150 °C
Storage temperature range TSTG -55 to +150 °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 357 °C/W
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
2 Version: H2002
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PART
NUMBER
MARKING
CODE
ZENER
VOLTAGE
TEST
CURRENT
REGULAR
IMPEDANCE
TEST
CURRENT
LEAKAGE
CURRENT
TYPICAL
T
EMPERATURE
COEFFICIENT
TEST
CURRENT
VZ @ IZT IZT ZZT
@ IZT
ZZK
@ IZK
IZK IR @ VR @ IZTC IZTC
V mA Ω Ω mA µA V mV/°C mA
Min. Nom.
Max. Max. Max. Max. Min. Max.
BZT52B2V4-G
2WX 2.35 2.4 2.45 5 100 600 1.0 50 1.0 -3.5 0 5
BZT52B2V7-G
2W1 2.65 2.7 2.75 5 100 600 1.0 20 1.0 -3.5 0 5
BZT52B3V0-G
2W2 2.94 3.0 3.06 5 95 600 1.0 10 1.0 -3.5 0 5
BZT52B3V3-G
2W3 3.23 3.3 3.37 5 95 600 1.0 5 1.0 -3.5 0 5
BZT52B3V6-G
2W4 3.53 3.6 3.67 5 90 600 1.0 5 1.0 -3.5 0 5
BZT52B3V9-G
2W5 3.82 3.9 3.98 5 90 600 1.0 3 1.0 -3.5 0 5
BZT52B4V3-G
2W6 4.21 4.3 4.39 5 90 600 1.0 3 1.0 -3.5 0 5
BZT52B4V7-G
2W7 4.61 4.7 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5
BZT52B5V1-G
2W8 5.00 5.1 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5
BZT52B5V6-G
2W9 5.49 5.6 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5
BZT52B6V2-G
2WA 6.08 6.2 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5
BZT52B6V8-G
2WB 6.66 6.8 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5
BZT52B7V5-G
2WC 7.35 7.5 7.65 5 15 80 1.0 1 5.0 2.5 5.3 5
BZT52B8V2-G
2WD 8.04 8.2 8.36 5 15 80 1.0 0.7 5.0 3.2 6.2 5
BZT52B9V1-G
2WE 8.92 9.1 9.28 5 15 100 1.0 0.5 6.0 3.8 7.0 5
BZT52B10-G 2WF 9.80 10 10.20
5 20 150 1.0 0.2 7.0 4.5 8.0 5
BZT52B11-G 2WG 10.78
11 11.22
5 20 150 1.0 0.1 8.0 5.4 9.0 5
BZT52B12-G 2WH 11.76
12 12.24
5 25 150 1.0 0.1 8.0 6.0 10.0 5
BZT52B13-G 2WI 12.74
13 13.26
5 30 170 1.0 0.1 8.0 7.0 11.0 5
BZT52B15-G 2WJ 14.70
15 15.30
5 30 200 1.0 0.1 10.5 9.2 13.0 5
BZT52B16-G 2WK 15.68
16 16.32
5 40 200 1.0 0.1 11.2 10.4 14.0 5
BZT52B18-G 2WL 17.64
18 18.36
5 45 225 1.0 0.1 12.6 12.4 16.0 5
BZT52B20-G 2WM 19.60
20 20.40
5 55 225 1.0 0.1 14.0 14.4 18.0 5
BZT52B22-G 2WN 21.56
22 22.44
5 55 250 1.0 0.1 15.4 16.4 20.0 5
BZT52B24-G 2WO 23.52
24 24.48
5 70 250 1.0 0.1 16.8 18.4 22.0 5
BZT52B27-G 2WP 26.46
27 27.54
2 80 300 0.5 0.1 18.9 21.4 25.3 2
BZT52B30-G 2WQ 29.40
30 30.60
2 80 300 0.5 0.1 21.0 24.4 29.4 2
BZT52B33-G 2WR 32.34
33 33.66
2 80 325 0.5 0.1 23.1 27.4 33.4 2
BZT52B36-G 2WS 35.28
36 36.72
2 90 350 0.5 0.1 25.2 30.4 37.4 2
BZT52B39-G 2WT 38.22
39 39.78
2 130 350 0.5 0.1 27.3 33.4 41.2 2
BZT52B43-G 2WU 42.14
43 43.86
2 130 350 0.5 0.1 29.4 36.4 45.2 2
BZT52B47-G
2WV 46.06
47 47.94
2 100 750 1.0 0.1 35.0 10.0 12.0 5
BZT52B51-G
X1. 49.98
51 52.02
2 100 750 1.0 0.045
35.7 10.0 12.0 5
BZT52B56-G
X2. 54.88
56 57.12
2 200 400 0.5 0.045
39.2 10.0 12.0 5
BZT52B62-G
X3. 60.76
62 63.24
2 215 423 0.5 0.045
43.4 10.0 12.0 5
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
3 Version: H2002
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PART
NUMBER
MARKING
CODE
ZENER
VOLTAGE
TEST
CURRENT
REGULAR
IMPEDANCE
TEST
CURRENT
LEAKAGE
CURRENT
TYPICAL
T
EMPERATURE
COEFFICIENT
TEST
CURRENT
VZ @ IZT IZT ZZT
@ IZT
ZZK
@ IZK
IZK IR @ VR @ IZTC IZTC
V mA Ω Ω mA µA V mV/°C mA
Min. Nom.
Max. Max. Max. Max. Min. Max.
BZT52B68-G
X4. 66.64
68 69.36
2 240 447 0.5 0.045
47.6 10.0 12.0 5
BZT52B75-G
X5. 73.5 75 76.5 2 255 470 0.5 0.045
52.5 10.0 12.0 5
ORDERING INFORMATION
ORDERING CODE
(Note 1)
PACKAGE PACKING
BZT52Bxxx-G RHG SOD-123 3K / 7" Reel
Note:
1. "xxx" defines voltage from 2.4V (BZT52B2V4-G) to 75V (BZT52B75-G)
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
4 Version: H2002
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Dissipation Curve
Fig.2 Zener Breakdown Characteristics
Fig.3 Zener Breakdown Characteristics
0
50
100
150
200
250
300
350
400
450
500
0 25 50 75 100 125 150
0
10
20
30
40
50
0 1 2 3 4 5 6 7 8 9 10
3V3
3V9
4V7
5V6
6V8
8V2
2V7
Test current
Iz 5mA
0
10
20
30
0 10 20 30 40
12
15
18
22 27
33
10
Test
current
Iz 5mA
Iz (mA)
Ambient Temperature (°C)
Iz (mA)
Vz (V)
Vz (V)
Power Dissipation (mW)
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
5 Version: H2002
PACKAGE OUTLINE DIMENSION
SOD-123
SUGGEST PAD LAYOUT
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
6 Version: H2002
Notice
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