Single N-channel Trench MOSFET 100V, 12A, 110m Features General Description The MDF1903 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1903 is suitable device for DC to DC converter and general purpose applications. VDS = 100V ID = 12A @VGS = 10V RDS(ON) (MAX) < 110m @VGS = 10V < 115m @VGS = 6.0V 100% UIL Tested D MDF1903 - Single N-Channel Trench MOSFET 100V MDF1903 G GDS S Absolute Maximum Ratings (Tc = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25oC Continuous Drain Current (1) TC=70oC Pulsed Drain Current Symbol Rating Unit VDSS 100 V VGSS 20 V 12 ID IDM TC=25oC Power Dissipation TC=70oC Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range PD A 9.6 40 A 33.8 W 21.7 EAS 25.9 TJ, Tstg -55~150 Symbol Rating RJA 62.5 RJC 3.7 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Mar. 2016. Version 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. Part Number MDF1903TH Temp. Range o -55~150 C Package Packing Rohs Status TO-220F Tube Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 2.0 3.0 Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 VGS = 10V, ID = 9A - 90 110 VGS = 6.0V, ID = 9A - 95 115 VDS = 10V, ID = 9A - 16 - - 8.8 - - 1.7 - - 2.3 - - 475 800 Drain-Source ON Resistance Forward Transconductance RDS(ON) gfs V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 50.0V, ID = 9A, VGS = 10V VDS = 25.0V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss - 20 - Output Capacitance Coss - 60 - Turn-On Delay Time td(on) - 6.8 - - 10.6 - - 16.2 - - 5.5 - - 0.75 1.2 V - 41 - ns - 68 - nC Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 50V, ID = 9A , RG = 3.0 tf MDF1903 - Single N-Channel Trench MOSFET 100V Ordering Information pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 9A, VGS = 0V IF = 9A, dl/dt = 100A/s Note : 1. 2. Surface mounted FR-4 board by JEDEC (jesd51-7) EAS is tested at starting Tj = 25, L = 1.0mH, IAS = 5.5A, VDD = 50V, VGS = 10V Mar. 2016. Version 1.1 2 MagnaChip Semiconductor Ltd. 150 ID, Drain Current [A] 25 Drain-Source On-Resistance [m] VGS = 10V 8.0V 5.0V 20 4.5V 15 4.0V 10 5 3.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 140 130 120 110 VGS = 6.0V 100 VGS = 10V 90 80 3.0 3.5 4.0 4.5 70 5.0 0 5 10 VDS, Drain-Source Voltage [V] 15 20 25 ID, Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 500 2.4 Notes : Notes : 450 1. VGS = 10 V 2. ID = 9.0 A 2.0 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 2.2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 9.0A 400 350 MDF1903 - Single N-Channel Trench MOSFET 100V 30 300 250 200 TJ = 25 150 100 50 0.4 0.2 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 25 Notes : Notes : VGS = 0V IDR, Reverse Drain Current [A] VDS = 10V ID, Drain Current [A] 20 15 TJ=25 10 5 0 0 1 2 3 4 5 6 7 TJ=25 0 10 0.3 8 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Mar. 2016. Version 1.1 1 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Note : ID = 9A VDS = 50V VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 600 6 4 Ciss 400 Notes ; 200 1. VGS = 0 V 2. f = 1 MHz Coss 2 Crss 0 0 0 2 4 6 8 0 10 5 10 Fig.7 Gate Charge Characteristics ID, Drain Current [A] 10 30 15 100us Operation in This Area is Limited by R DS(on) 1 12 1 ms 0 100 ms 1s DC 10 25 2 10 ms 10 20 Fig.8 Capacitance Characteristics ID, Drain Current [A] 10 15 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] -1 MDF1903 - Single N-Channel Trench MOSFET 100V 800 10 9 6 3 Single Pulse TJ=Max rated TC=25 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 10 0.2 10 0.1 0.05 0.02 -1 10 0.01 single pulse Z JC , Thermal Response D=0.5 0 -2 10 Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Mar. 2016. Version 1.1 4 MagnaChip Semiconductor Ltd. 3 Leads, TO-220F Dimensions are in millimeters, unless otherwise specified Mar. 2016. Version 1.1 5 MDF1903 - Single N-Channel Trench MOSFET 100V Package Dimension MagnaChip Semiconductor Ltd. MDF1903 - Single N-Channel Trench MOSFET 100V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar. 2016. Version 1.1 6 MagnaChip Semiconductor Ltd.