Mar. 2016. Version 1.1 MagnaChip Semiconductor Ltd.
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MDF1903 – Single N-Channel Trench MOSFET 100V
ㄹ
Absolute Maximum Ratings (Tc = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
V
Gate-Source Voltage
VGSS
V
Continuous Drain Current (1)
TC=25oC
ID
A
TC=70oC
Pulsed Drain Current
IDM
A
Power Dissipation
TC=25oC
PD
33.8
W
TC=70oC
21.7
Single Pulse Avalanche Energy (2)
EAS
25.9
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient (1)
RθJA
62.5
oC/W
Thermal Resistance, Junction-to-Case
RθJC
3.7
MDF1903
Single N-channel Trench MOSFET 100V, 12A, 110mΩ
D
G
S
Features
VDS = 100V
ID = 12A @VGS = 10V
RDS(ON) (MAX)
< 110mΩ @VGS = 10V
< 115mΩ @VGS = 6.0V
100% UIL Tested
General Description
The MDF1903 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDF1903 is suitable device for DC to DC
converter and general purpose applications.
G D S
Mar. 2016. Version 1.1 MagnaChip Semiconductor Ltd.
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MDF1903 – Single N-Channel Trench MOSFET 100V
Ordering Information
Part Number
Temp. Range
Package
Packing
Rohs Status
MDF1903TH
-55~150oC
TO-220F
Tube
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
100
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.0
2.0
3.0
Drain Cut-Off Current
IDSS
VDS = 80V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 9A
-
90
110
mΩ
VGS = 6.0V, ID = 9A
-
95
115
Forward Transconductance
gfs
VDS = 10V, ID = 9A
-
16
-
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
VDS = 50.0V, ID = 9A,
VGS = 10V
-
8.8
-
nC
Gate-Source Charge
Qgs
-
1.7
-
Gate-Drain Charge
Qgd
-
2.3
-
Input Capacitance
Ciss
VDS = 25.0V, VGS = 0V,
f = 1.0MHz
-
475
800
pF
Reverse Transfer Capacitance
Crss
-
20
-
Output Capacitance
Coss
-
60
-
Turn-On Delay Time
td(on)
VGS = 10V, VDS = 50V,
ID = 9A , RG = 3.0Ω
-
6.8
-
ns
Rise Time
tr
-
10.6
-
Turn-Off Delay Time
td(off)
-
16.2
-
Fall Time
tf
-
5.5
-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 9A, VGS = 0V
-
0.75
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 9A, dl/dt = 100A/μs
-
41
-
ns
Body Diode Reverse Recovery Charge
Qrr
-
68
-
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 5.5A, VDD = 50V, VGS = 10V
Mar. 2016. Version 1.1 MagnaChip Semiconductor Ltd.
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MDF1903 – Single N-Channel Trench MOSFET 100V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
25
30
8.0V
4.5V
VGS = 10V
5.0V
4.0V
3.5V
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25
70
80
90
100
110
120
130
140
150
VGS = 10V
VGS = 6.0V
Drain-Source On-Resistance [mΩ]
ID, Drain Current [A]
-50 -25 025 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
※ Notes :
1. VGS = 10 V
2. ID = 9.0 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
2 3 4 5 6 7 8 9 10
0
50
100
150
200
250
300
350
400
450
500
※ Notes :
ID = 9.0A
TJ = 25℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0 1 2 3 4 5 6 7 8
0
5
10
15
20
25
VGS, Gate-Source Voltage [V]
TJ=25℃
※ Notes :
VDS = 10V
ID, Drain Current [A]
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
100
101
TJ=25℃
※ Notes :
VGS = 0V
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
Mar. 2016. Version 1.1 MagnaChip Semiconductor Ltd.
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MDF1903 – Single N-Channel Trench MOSFET 100V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
25 50 75 100 125 150
0
3
6
9
12
15
ID, Drain Current [A]
TC, Case Temperature [℃]
10-4 10-3 10-2 10-1 100101
10-3
10-2
10-1
100
101
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
, Thermal Response
t1, Rectangular Pulse Duration [sec]
0 5 10 15 20 25 30
0
200
400
600
800 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 2 4 6 8 10
0
2
4
6
8
10
VDS = 50V
※ Note : ID = 9A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101102
10-2
10-1
100
101
102
100us
1 ms
1s
100 ms
DC
10 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Mar. 2016. Version 1.1 MagnaChip Semiconductor Ltd.
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MDF1903 – Single N-Channel Trench MOSFET 100V
Package Dimension
3 Leads, TO-220F
Dimensions are in millimeters, unless otherwise specified
Mar. 2016. Version 1.1 MagnaChip Semiconductor Ltd.
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MDF1903 – Single N-Channel Trench MOSFET 100V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.