SS3003CH
No.8992-1/3
Applications
High frequency rectification (switching regulators, conver ters, choppers).
Features
Small switching noise.
Low forward voltage (IF=3A, VF max=0.42V).
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V
Average Output Current IO3.0 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 20 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=2.0mA 30 V
Forward Voltage VFIF=2.0A 0.335 0.385 V
IF=3.0A 0.37 0.42 V
Reverse Current IRVR=15V 1.4 mA
Interterminal Capacitance C VR=10V, f=1MHz 90 pF
Reverse Recovery Time trr IF=IR=100mA 20 ns
Thermal Resistance Rth(j-a)
Mouted on a ceramic board (900mm
2
0.8mm)
50 °C / W
Marking : SG
Ordering number : EN8992
72606 / 32406SB MS IM TB-00002130
SS3003CH Low VF Schottky Barrier Diode
30V, 3.0A Rectifier
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SS3003CH
No.8992-2/3
Package Dimensions Electrical Connection
unit : mm
7018-012
trr Test Circuit
00.1 0.2
IT09872
0.01
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
0.60.3 0.4 0.5
Ta=125
°
C
75
°
C
100
°
C
50
°
C
25
°
C
0
°
C
--25
°
C
(2) (3)
(1)
0
00.5
1.8
1.6
1.4
0.2
0.4
0.6
0.8
1.0
1.2
3.52.5 3.02.01.0 1.5
IT09874
(4)
Forward Voltage, VF -- V
Forward Current, IF -- A
IF -- VF
Average Output Current, IO -- A
PF(AV) -- IO
Average Forward Power Dissipation, PF(AV) -- W
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
180°
360°
Sine wave
θ
360°
Rectangular
wave
0
0
0.004
0.008
0.012
105
0.016
0.002
0.006
0.010
0.014
2015 3025 35
IT10607
(1)
(2)
(3)
(4)
100 35
IT09873
0.1
1.0
10
100
1k
10k
100k
1000k
201552530
Ta=125
°
C
1
00
°
C
75
°
C
50
°
C
25
°
C
0
°
C
--25
°
C
Reverse Voltage, VR -- V
IR -- VR
Reverse Current, IR -- µA
PR(AV) -- VR
Average Reverse Voltage, VR -- V
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Rectangular
wave
Sine wave
θ
360°
VR
180°360°
VR
Average Reverse Power Dissipation, PR(AV) -- W
2.9
0.95
0.05
13
465
2
0.20.7 0.9 2.8
1.6
0.6 0.6
0.2
0.4 0.15
1 : Cathode
2 : Cathode
3 : No contact
4 : Anode
5 : Cathode
6 : Cathode
SANYO : CPH6
1 : Cathode
2 : Cathode
3 : No Contact
4 : Anode
5 : Cathode
6 : Cathode
Top view
2
654
13
Duty10%
5010010
--5V trr
10µs
100mA100mA
10mA
SS3003CH
No.8992-3/3
PS
70.01 23 7
0.1
052 2337
1.0
5
24
16
8
20
12
4
ID00523
IFSM -- t
I
S
20ms
t
Current waveform 50Hz sine wave
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
Reverse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -- pF
0.1 2
100
2
3
5
5
7
7
3357
1.0 23 5 23 5710 IT09871
0 0.5 1.51.0 2.0 3.53.02.5
0
20
40
120
100
80
60
140
IT10608
(3)
(1) (2) (4)
Tc -- IO
θ
360°
180°
360°
(1)Rectangular wav
e θ
=60
°
(2)Rectangular wav
e θ
=120
°
(3)Rectangular wav
e θ
=180
°
(4)Sine wav
e θ
=180
°
Rectangular
wave
Sine
wave
Case Temperature, Tc -- °C
Average Output Current, IO -- A
*When mounted in reliability
operaion board,
Rth(J-a)=50°C/W
This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
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