VS-MUR3020WTPbF, VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 15 A FRED Pt(R) FEATURES Base common cathode 2 * Ultrafast recovery time * Low forward voltage drop * 175 C operating junction temperature * Low leakage current * Compliant to RoHS Directive 2002/95/EC * Designed and JEDEC-JESD47 1 3 Anode Anode 2 1 2 Common cathode TO-247AC qualified according to * Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION/APPLICATIONS PRODUCT SUMMARY Package TO-247AC IF(AV) 2 x 15 A VR 200 V VF at IF 1.05 V trr typ. See Recovery table TJ max. 175 C Diode variation Common cathode VS-MUR3020WT... is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM per leg Average rectified forward current total device IF(AV) Non-repetitive peak surge current per leg IFSM Peak repetitive forward current per leg IFM Operating junction and storage temperatures MAX. UNITS 200 V 15 Rated VR, TC = 150 C 30 200 Rated VR, square wave, 20 kHz, TC = 150 C TJ, TStg A 30 - 65 to 175 C UNITS ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 15 A - - 1.05 IR = 100 A IF = 15 A, TJ = 150 C - - 0.85 VR = VR rated - - 10 TJ = 150 C, VR = VR rated - - 500 V A Reverse leakage current IR Junction capacitance CT VR = 200 V - 55 - pF Series inductance LS Measured lead to lead 5 mm from package body - 12 - nH Revision: 15-Aug-11 Document Number: 94080 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR3020WTPbF, VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. IF = 1.0 A, dIF/dt = 50 A/s, VR = 30 V TJ = 25 C TJ = 125 C TYP. MAX. - - 35 - 22 - UNITS ns - 39 - - 1.6 - - 4.1 - TJ = 25 C - 19 - TJ = 125 C - 90 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 C Thermal resistance, junction to case per leg RthJC - - 1.5 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf * cm (lbf * in) Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 C TJ = 125 C IF = 15 A dIF/dt = 200 A/s VR = 160 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Revision: 15-Aug-11 Case style TO-247AC C/W MUR3020WT Document Number: 94080 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR3020WTPbF, VS-MUR3020WT-N3 Vishay Semiconductors 1000 100 10 TJ = 175 C TJ = 150 C TJ = 25 C 1 TJ = 175 C IR - Reverse Current (A) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 C TJ = 125 C 10 TJ = 100 C 1 0.1 0.1 TJ = 25 C 0.01 0 0.3 0.6 0.9 0 1.5 1.2 50 100 150 200 250 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 TJ = 25 C 10 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Aug-11 Document Number: 94080 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR3020WTPbF, VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors 60 170 50 160 40 trr (ns) Allowable Case Temperature (C) 180 DC 150 IF = 30 A IF = 15 A IF = 8 A 30 Square wave (D = 0.50) Rated VR applied 140 20 See note (1) 130 0 10 5 15 20 10 100 25 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/s) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 25 200 20 RMS limit 15 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 10 5 DC 5 10 15 20 160 VR = 160 V TJ = 125 C TJ = 25 C 120 IF = 30 A IF = 15 A IF = 8 A 80 40 0 0 Qrr (nC) Average Power Loss (W) VR = 160 V TJ = 125 C TJ = 25 C 25 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 0 100 1000 dIF/dt (A/s) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 15-Aug-11 Document Number: 94080 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR3020WTPbF, VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 15-Aug-11 Document Number: 94080 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR3020WTPbF, VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MUR 1 2 30 20 WT PbF 3 4 5 6 1 - Vishay Semiconductors product 2 - Ultrafast MUR series (TO-247AC) 3 - Current rating (30 = 30 A) 4 - Voltage rating (20 = 200 V) 5 - WT = Center tap (dual) TO-247 6 - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-MUR3020WTPbF 25 500 PACKAGING DESCRIPTION Antistatic plastic tube VS-MUR3020WT-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 15-Aug-11 www.vishay.com/doc?95223 TO-247ACPbF www.vishay.com/doc?95226 TO-247AC-N3 www.vishay.com/doc?95007 Document Number: 94080 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) O P E B (2) R/2 N A2 S (Datum B) O K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000