©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 03/17/16
Low Capacitance ESD Protection - SP0544T Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
IPP Peak Current (tp=8/20μs) 4.0 A
TOP Operating Temperature -40 to 150 °C
TSTOR Storage Temperature -55 to 150 °C
Electrical Characteristics (TOP=25ºC)
Note: 1 Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) with 100ns width and 2ns rise time.
8/20μS Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.05.0 10.015.020.025.030.0
Time (μs)
Percent of IPP
Clamping Voltage vs IPP
0.0
2.0
4.0
6.0
8.0
10.0
1.02.0 3.04.0
Clamp Voltage (V
C
)
Peak Pulse Current-I
PP
(A)
Capacitance vs. Reverse Bias
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
00.5 11.5 22.533.5 44.5 5
Capacitance (pF)
Bias Voltage (V)
Transmission Line Pulsing(TLP) Plot
0
5
10
15
036912 15
TLP Voltage (V)
TLP Current (A)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR ≤ 1µA 5.0 V
Reverse Leakage Current ILEAK VR=5V, Any I/O to GND 1. 5 µA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Fwd 6.6 V
IPP=2A, tp=8/20µs, Fwd 7. 0 V
Dynamic Resistance2RDYN TLP, tP=100ns, I/O to GND 0.3 Ω
ESD Withstand Voltage1VESD
IEC61000-4-2 (Contact) ±12 kV
IEC61000-4-2 (Air) ±25 kV
Diode Capacitance1CI/O-GND Reverse Bias=0V, f=1 MHz 0.5 pF
Diode Capacitance1CI/O-/O Reverse Bias=0V, f=1 MHz 0.3 pF