International Rectifier HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated @ Fast Switching Ease of Paralieling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low PD-9.620A IRFBG3O Voss = 1000V Rosen) = 5.00 Ip=3.1A on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings TO-220AB Parameter Max. Units Ib @ Te = 25C Continuous Drain Current, Ves @ 10 V 3.1 Ip @ Tc = 100C. | Continuous Drain Current, Ves @ 10 V 2.0 A Ibm Pulsed Drain Current 12 Pp @ Tc = 25C | Power Dissipation 125 Ww Linear Derating Factor 1.0 wre Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 280 md lar Avalanche Current 3.1 A Ear Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt @ 1.0 Vins Ta Operating Junction and -55 to +150 Tsta Storage Temperature Range C { Soldering Temperature, for 10 seconds 300 (1.6mm from case) | Mounting Torque, 6-32 or M3 screw 10 ibfsin (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Rec Junction-to-Case = _ 1.0 Recs Case-to-Sink, Flat, Greased Surface _ 0.50 C Rasa Junction-to-Ambient _ 62 479IRFBG30 | | Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vieryoss Drain-to-Source Breakdown Voltage 1000 | - V_ | Vas=0V, Ip= 250A AV (er)oss/ATy} Breakdown Voltage Temp. Coefficient _ 1.4 _| VC | Reference 'to 25C, Ibp= 1mA Rosj(on) Static Drain-to-Source On-Resistance _ _ 5.0 Q | Vas=10V, Ip=1.9A @ Vestn) Gate Threshold Voltage 20 | | 40 V__ | Vos=Ves, Ib= 250A Dis Forward Transconductance 2.1 _ _ S| Vos=100V, Ip=1.9A @ Inss Drain-to-Source Leakage Current |__| 100 nA Voe=1000V, Ves=0V | 500 Vps=800V, Ves=0V, Ty=125C lass Gate-to-Source Forward Leakage _ 100 nA Vas=20V Gate-to-Source Reverse Leakage _ | -100 Vas=-20V Qg Total Gate Charge = = 80 [p=3.1A Qgs Gate-to-Source Charge _ 10 | nC | Vps=400V Qga Gate-to-Drain ("Miller") Charge _ _ 42 Vas=10V See Fig. 6 and 13 tafon) Turn-On Delay Time 12 _ Voo=500V t Rise Time 25 = ns ID=3.1A taotty Turn-Off Delay Time _ 89 Re=120 t Fall Time _ 29 _ Rp=170Q See Figure 10 @ Lo internal Drain Inductance _ 4.5 - oo oad ) nH | from package iis Ls Internal Source Inductance | 75) and center of ap die contact 8 Ciss Input Capacitance | 980 | Vas=0V Coss Output Capacitance | 140), PF | Vos=25V Crss Reverse Transfer Capacitance _ 50 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current MOSFET symbol D (Body Diode) ~}]7]* A | Showing the Isha Pulsed Source Current _ _ 12 integral reverse (Body Diode) p-n junction diode. 8 Vsp Diode Forward Voltage _ _ 1.8 V__ | Ts=25C, Is=3.1A, Vas=0V ter Reverse Recovery Time | 410 | 620 | ns | Ty=25C, Ip=3.1A Qr Reverse Recovery Charge _ 1.3 | 2.0 | uC |{di/dt=100A/us @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Lg+Lp) Notes: @ Repetitive rating; puise width limited by Igp<3.1A, di/dts80A/us, Vpp<600 , max. junction temperature (See Figure 11) Tys150C @ Vpp=50V, starting Ty=25C, L=55mH Pulse width < 300 ys; duty cycle <2%. Rg=25Q, las=3.1A (See Figure 12) 480IRFBG30 Ip, Drain Current (Amps) Ip, Drain Current (Amps) 404 @ Qa E < < 2 5 O 40 g o fo 20us PULSE WIDTH 20us PULSE WIDTH Te = 25C Te = 150C 10 . 102 Vps, Drain-to-Source Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To=25C Tco=150C Ros(on) Drain-to-Source On Resistance (Normalized) Vps = 100V 20us PULSE WIDTH 0.0 Ves = 10V *~60 ~40 -20 0 20 40 60 80 100 120 140 160 Ves, Gate-to-Source Voltage (volts) Ty, Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 481IRFBG30 Capacitance (pF) Isp, Reverse Drain Current (Amps) 20 Cgs + Cga Cas Cog Cas + Vog = 400V Vog = 200 Ving = 100V a fos Vas, Gate-to-Source Voltage (volts) SEE FIGURE 13 40 80 Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 102 OPERATION IN THIS AREA LIMITED Fos (ON) 104 @ a & <= 10 < 5 6 4 a a T Ty=150C Veg = OV SINGLE 0. : : : Al o.4 1 2 5 49 2 8 422 5 493 2 5 404 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 482Ip, Drain Current (Amps) IRFBG30 D Vos WN D.U.T, L A paul Vop YP10Vv Pulse Wich s 1s Duty Factor < 0.1% L Fig 10a. Switching Time Test Circuit ws TN fT | | | | | | | I ! t 10% 25 50 75 100 125 150 Ves I Tc, Case Temperature (C) taon) tr tao) Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature Be e o Poy (THERMAL RESPONSE) fen tall NOTES: 4. DUTY FACTOR, O=t1/t2 2. PEAK Tj=Ppy x Ztnjc + Te Thermal Response (Zgjc) SINGLE PULSE 10 105 1074 10-3 10? 0.4 1 10 t1, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 483IRFBG30 Vary tp to obtain Vps > required las > = oO Cc ui > Fig 12a. Unclamped Inductive Test Circuit 2 a 2 oO t ao P a t Lu Vos / / 25 50 75 100 125 150 / Starting Ty, Junction Temperature(C) lag - Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator ______ Q sovMl lw Te abe ( CisCSC RR RSEESESSSSES] k- Qas Qep 4 Ves Ve oma [ Charge -+ lq * 'b Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1509 Appendix C: Part Marking Information See page 1516 International Appendix E: Optional Leadforms ~ See page 1525 Rectifier 484