UPD120N33TA-E1-AT - Renesas Electronics

R03DS0030EJ0400 Rev.4.00 Page 1 of 13

Apr 15, 2011

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Preliminary Data Sheet

PD120Nxx Series

THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR (OUTPUT CURRENT: 0.3 A)

Description

The

PD120Nxx series provides low-voltage output regulators with the output current capacitance of 0.3 A. The output

voltage varies according to the product (1.5 V, 1.8 V, 2.5 V, or 3.3 V). The circuit current is low due to the CMOS

structure, so the power consumption in the ICs can be reduced. Moreover, since ICs are mounted in the small package

of the

PD120Nxx series, this contributes to the miniaturization of the application set.

Features

• Output current: 0.3 A

• On-chip overcurrent protection circuit

• On-chip thermal protection circuit

• Small circuit operation current: 60

A TYP.

Applications

Digital TV, Audio, HDD, DVD, etc.

Pin Configurations (Marking Side)

SC-62

GND

OUTPUT INPUT

321

SC-74A

GND

N.C.

GND

OUTPUT INPUT

123

Block Diagram

INPUT

OUTPUT

GND

Overcurrent

Protection Circuit

Thermal

Protection Circuit

Error

Amp.

Reference

Voltage

Circuit

R03DS0030EJ0400

Rev.4.00

Apr 15, 2011

μPD120Nxx Series Chapter Title

R03DS0030EJ0400 Rev.4.00 Page 2 of 13

Apr 15, 2011

Ordering Information

Part Number Package Output Voltage Marking

PD120N15TA SC-74A 1.5 V K71

PD120N15T1B SC-62 1.5 V 7D

PD120N18TA SC-74A 1.8 V K72

PD120N18T1B SC-62 1.8 V 7E

PD120N25TA SC-74A 2.5 V K73

PD120N25T1B SC-62 2.5 V 7F

PD120N33TA SC-74A .3.3 V K74

PD120N33T1B SC-62 3.3 V 7G

Remark -E1 or -E2 is suffixed to the end of the part number of taping products, and -A, -AT, -AY or -AZ to that of Pb-

free products. See the table below for details.

Part Number Note1 Package Package Type

PD120NxxTA-A Note2

SC-74A • Unit

PD120NxxTA-AT Note2

SC-74A • Unit

PD120NxxTA-E1-A Note2

SC-74A • 8 mm wide embossed taping

• Pin 1 on take-up side

• 3000 pcs/reel (MAX.)

PD120NxxTA-E1-AT Note2

SC-74A • 8 mm wide embossed taping

• Pin 1 on take-up side

• 3000 pcs/reel (MAX.)

PD120NxxTA-E2-A Note2

SC-74A • 8 mm wide embossed taping

• Pin 1 on draw-out side

• 3000 pcs/reel (MAX.)

PD120NxxTA-E2-AT Note2

SC-74A • 8 mm wide embossed taping

• Pin 1 on draw-out side

• 3000 pcs/reel (MAX.)

PD120NxxT1B-AY Note3

SC-62 • Unit

PD120NxxT1B-AZ Note3

SC-62 • Unit

PD120NxxT1B-E1-AY Note3

SC-62 • 12 mm wide embossed taping

• Pin 1 on take-up side

• 1000 pcs/reel (MAX.)

PD120NxxT1B-E1-AZ Note3

SC-62 • 12 mm wide embossed taping

• Pin 1 on take-up side

• 1000 pcs/reel (MAX.)

PD120NxxT1B-E2-AY Note3

SC-62 • 12 mm wide embossed taping

• Pin 1 on draw-out side

• 1000 pcs/reel (MAX.)

PD120NxxT1B-E2-AZ Note3

SC-62 • 12 mm wide embossed taping

• Pin 1 on draw-out side

• 1000 pcs/reel (MAX.)

Notes 1. xx stands for symbols that indicate the output voltage.

2. Pb-free (This product does not contain Pb in external electrode and other parts.)

3. Pb-free (This product does not contain Pb in external electrode.)

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μPD120Nxx Series Chapter Title

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Apr 15, 2011

Absolute Maximum Ratings (TA = 25°C, unless otherwise specified.)

Rating Parameter Symbol

PD120NxxTA

PD120NxxT1B

Unit

Input Voltage VIN −0.3 to +6 V

Power Dissipation Note1 PT 180/510 Note2 400/2000 Note3 mW

Operating Ambient Temperature TA –40 to +85 °C

Operating Junction Temperature TJ –40 to +150 °C

Storage Temperature Tstg –55 to +150 °C

Thermal Resistance (junction to ambient) Rth(J-A) 695/245 Note2 315/62.5 Note3 °C/W

Note 1. Internally limited. When the operating junction temperature rises over 150°C, the internal circuit shuts down the

output voltage.

2. Mounted on ceramic substrate of 75 mm2 x 0.7 mm

3. Mounted on ceramic substrate of 16 cm2 x 0.7 mm

Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any

parameter. That is, the absolute maximum ratings are rated values at which the product is on the

verge of suffering physical damage, and therefore the product must be used under conditions that

ensure that the absolute maximum ratings are not exceeded.

Typical Connection

OUT

INPUT OUTPUT

PD120Nxx

CIN: 0.1

F or higher. Set this value according to the length of the line between the regulator and INPUT pin. Be sure to

connect CIN to prevent parasitic oscillation. If using a laminated ceramic capacitor, it is necessary to ensure that CIN

is 0.1

F or higher for the voltage and temperature range to be used.

COUT: 10

F or higher. Be sure to connect COUT to prevent oscillation and improve excessive load regulation. Place CIN

and COUT as close as possible to the IC pins (within 2 cm). Be sure to use the capacitor of 10

F or higher of

capacity values and 1 to 8 Ω of equivalent series resistance under an operating condition.

D1: If the OUTPUT pin has a higher voltage than the INPUT pin, connect a diode.

D2: If the OUTPUT pin has a lower voltage than the GND pin, connect a schottky barrier diode.

Caution Make sure that no voltage is applied to the OUTPUT pin from external.

μPD120Nxx Series Chapter Title

R03DS0030EJ0400 Rev.4.00 Page 4 of 13

Apr 15, 2011

Recommended Operating Conditions

Parameter Symbol Type Number MIN. TYP. MAX. Unit

PD120N15 3.0 5.5 V

PD120N18 3.2 5.5 V

PD120N25

4.5 5.5 V

Input Voltage VIN

PD120N33 4.5 5.5 V

Output Current IO All 0 0.3 A

Operating Ambient Temperature TA All −40 +85 °C

Operating Junction Temperature TJ All −40 +125 °C

Caution Use of conditions other than the above-listed recommended operating conditions is not a problem as

long as the absolute maximum ratings are not exceeded. However, since the use of such conditions

diminishes the margin of safety, careful evaluation is required before such conditions are used.

Moreover, using the MAX. value for all the recommended operating conditions is not guaranteed to be

safe.

Electrical Characteristics

PD120N15 (TJ = 25°C, VIN = 5.0 V, IO = 0.15 A, CIN = 0.1

F, COUT = 10

F, unless otherwise specified.)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

VO1 1.47 1.5 1.53 V Output Voltage

VO2 3.0 V ≤ VIN ≤ 5.5 V, 0 A ≤ IO ≤ 0.3 A 1.455 − 1.545 V

Line Regulation REGIN 3.0 V ≤ VIN ≤ 5.5 V − 1 30 mV

Load Regulation REGL 0 A ≤ IO ≤ 0.3 A − 2 30 mV

Quiescent Current IBIAS IO = 0 A − 60 120

Quiescent Current Change

IBIAS 3.0 V ≤ VIN ≤ 5.5 V − − 25

Output Noise Voltage Vn 10 Hz ≤ f ≤ 100 kHz − 100 −

Vr.m.s.

Ripple Rejection R•R f = 1 kHz, 3.0 V ≤ VIN ≤ 5.5 V − 63 − dB

IO = 0.15 A − 0.6 0.9 V Dropout Voltage VDIF

IO = 0.3 A − 1.0 − V

Short Circuit Current IOshort VIN = 5 V − 0.2 − A

Peak Output Current IOpeak VIN = 5 V 0.3 − − A

Temperature Coefficient of

Output Voltage

VO/

T IO = 0 A, 0°C ≤ TJ ≤ 125°C − −0.03 − mV/°C

PD120N18 (TJ = 25°C, VIN = 5.0 V, IO = 0.15 A, CIN = 0.1

F, COUT = 10

F, unless otherwise specified.)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

VO1 1.764 1.8 1.836 V Output Voltage

VO2 3.2 V ≤ VIN ≤ 5.5 V, 0 A ≤ IO ≤ 0.3 A 1.746 − 1.854 V

Line Regulation REGIN 3.2 V ≤ VIN ≤ 5.5 V − 1 30 mV

Load Regulation REGL 0 A ≤ IO ≤ 0.3 A − 2 30 mV

Quiescent Current IBIAS IO = 0 A − 60 120

Quiescent Current Change

IBIAS 3.2 V ≤ VIN ≤ 5.5 V − − 25

Output Noise Voltage Vn 10 Hz ≤ f ≤ 100 kHz − 120 −

Vr.m.s.

Ripple Rejection R•R f = 1 kHz, 3.2 V ≤ VIN ≤ 5.5 V − 63 − dB

Dropout Voltage VDIF IO = 0.15 A − 0.4 0.65 V

Short Circuit Current IOshort VIN = 5 V − 0.2 − A

Peak Output Current IOpeak VIN = 5 V 0.3 − − A

Temperature Coefficient of

Output Voltage

VO/

T IO = 0 A, 0°C ≤ TJ ≤ 125°C − −0.06 − mV/°C

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Apr 15, 2011

PD120N25 (TJ = 25°C, VIN = 5.0 V, IO = 0.15 A, CIN = 0.1

F, COUT = 10

F, unless otherwise specified.)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

VO1 2.45 2.5 2.55 V Output Voltage

VO2 4.5 V ≤ VIN ≤ 5.5 V, 0 A ≤ IO ≤ 0.3 A 2.425 − 2.575 V

Line Regulation REGIN 4.5 V ≤ VIN ≤ 5.5 V − 1 30 mV

Load Regulation REGL 0 A ≤ IO ≤ 0.3 A − 2 30 mV

Quiescent Current IBIAS IO = 0 A − 60 120

Quiescent Current Change

IBIAS 4.5 V ≤ VIN ≤ 5.5 V − − 25

Output Noise Voltage Vn 10 Hz ≤ f ≤ 100 kHz − 170 −

Vr.m.s.

Ripple Rejection R•R f = 1 kHz, 4.5 V ≤ VIN ≤ 5.5 V − 60 − dB

Dropout Voltage VDIF IO = 0.15 A − 0.3 0.7 V

Short Circuit Current IOshort VIN = 5 V − 0.2 − A

Peak Output Current IOpeak VIN = 5 V 0.3 − − A

Temperature Coefficient of

Output Voltage

VO/

T IO = 0 A, 0°C ≤ TJ ≤ 125°C − −0.07 − mV/°C

PD120N33 (TJ = 25°C, VIN = 5.0 V, IO = 0.15 A, CIN = 0.1

F, COUT = 10

F, unless otherwise specified.)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

VO1 3.234 3.3 3.366 V Output Voltage

VO2 4.5 V ≤ VIN ≤ 5.5 V, 0 A ≤ IO ≤ 0.3 A 3.201 − 3.399 V

Line Regulation REGIN 4.5 V ≤ VIN ≤ 5.5 V − 1 30 mV

Load Regulation REGL 0 A ≤ IO ≤ 0.3 A − 2 30 mV

Quiescent Current IBIAS IO = 0 A − 60 120

Quiescent Current Change

IBIAS 4.5 V ≤ VIN ≤ 5.5 V − − 25

Output Noise Voltage Vn 10 Hz ≤ f ≤ 100 kHz − 220 −

Vr.m.s.

Ripple Rejection R•R f = 1 kHz, 4.5 V ≤ VIN ≤ 5.5 V − 60 − dB

Dropout Voltage VDIF IO = 0.15 A − 0.2 0.6 V

Short Circuit Current IOshort VIN = 5 V − 0.2 − A

Peak Output Current IOpeak VIN = 5 V 0.3 − − A

Temperature Coefficient of

Output Voltage

VO/

T IO = 0 A, 0°C ≤ TJ ≤ 125°C − −0.06 − mV/°C

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μPD120Nxx Series Chapter Title

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Apr 15, 2011

Typical Characteristics

Pd vs. TA (

PD120NxxTA) Pd vs. TA (

PD120NxxT1B)

Pd - Internal Power Consumption - W

0.1

0.2

0.3

0.4

0.5

0.6

0 20406080100

(Mounted on ceramic substrate of 75 mm

x 0.7

(Without heatsink)

245°C/W

695°C/W

TA - Operating Ambient Temperature - °C

Pd - Internal Power Consumption - W

0.5

1.5

2.5

0 20406080100

62.5°C/W

315°C/W

(Mounted on ceramic substrate of 16 cm

x 0.7

(Without heatsink)

A - Operating Ambient Temperature - °C

VO vs. TJ

VO - Output Voltage Variation - mV

-10

-5

-50 0 50 100 150

= 0.15 A

μPD120N18

μPD120N15

TJ - Operating Junction Temperature - °C

VO - Output Voltage Variation - mV

-10

-5

-50 0 50 100 150

= 0.15 A

μPD120N25

μPD120N33

TJ - Operating Junction Temperature - °C

VO vs. VIN (

PD120N15)

VO vs. VIN (

PD120N18)

VO - Output Voltage - V

12345 6

TJ = 25˚C

IO = 5 mA

IO = 150 mA

IO = 300 mA

VIN - Input Voltage - V

VO - Output Voltage - V

12 345 6

= 25˚C

= 5 mA

= 150 mA

= 300 mA

VIN - Input Voltage - V

μPD120Nxx Series Chapter Title

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Apr 15, 2011

VO vs. VIN (

PD120N25)

VO vs. VIN (

PD120N33)

VO - Output Voltage - V

12 3 45 6

TJ = 25˚C

IO = 5 mA

IO = 150 mA

IO = 300 mA

VIN - Input Voltage - V

VO - Output Voltage - V

123456

= 25˚C

= 5 mA

= 150 mA

= 300 mA

VIN - Input Voltage - V

IBIAS (IBIAS(S)) vs. VIN (

PD120N15)

IBIAS (IBIAS(S)) vs. VIN (

PD120N18)

IBIAS - Quiescent Current -

200

400

600

800

1000

1234 5 6

TJ = 25˚C

IO = 300 mA

IO = 150 mA

IO = 5 mA

VIN - Input Voltage - V

IBIAS - Quiescent Current -

200

400

600

800

1000

123456

= 25˚C

= 300 mA

= 150 mA

= 5 mA

IN - Input Voltage - V

BIAS (IBIAS(S)) vs. VIN (

PD120N25) IBIAS (IBIAS(S)) vs. VIN (

PD120N33)

IBIAS - Quiescent Current -

200

400

600

800

1000

123456

= 25˚C

= 300 mA

= 150 mA

= 5 mA

VIN - Input Voltage - V

IBIAS - Quiescent Current -

200

400

600

800

1000

1234 56

TJ = 25˚C

IO = 300 mA

IO = 150 mA

IO = 5 mA

VIN - Input Voltage - V

μPD120Nxx Series Chapter Title

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Apr 15, 2011

VDIF vs. TJ IOpeak vs. VDIF (

PD120N15)

VDIF - Dropout Voltage - V

0.2

0.4

0.6

0.8

-25 0 25 50 75 100 125 150

= 0.15 A

μPD120N15

μPD120N25

μPD120N18

μPD120N33

TJ - Operating Junction Temperature - °C

IOpeak - Peak Output Current - A

0.1

0.2

0.3

0.4

0.5

0.6

0.7

012345

TJ = 0°C

TJ = 25°C

TJ = 125°C

DIF - Dropout Voltage - V

IOpeak vs. VDIF (

PD120N18) IOpeak vs. VDIF (

PD120N25)

IOpeak - Peak Output Current - A

0.1

0.2

0.3

0.4

0.5

0.6

0.7

012345

= 0°C

= 25°C

= 125°C

VDIF - Dropout Voltage - V

IOpeak - Peak Output Current - A

0.1

0.2

0.3

0.4

0.5

0.6

0.7

01234

= 0°C

= 25°C

= 125°C

VDIF - Dropout Voltage - V

IOpeak vs. VDIF (

PD120N33)

R•R vs. f

IOpeak - Peak Output Current - A

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0123

= 0°C

= 25°C

= 125°C

VDIF - Dropout Voltage - V

R•R - Ripple Rejection - dB

10 100 1000 10000 100000

= 25°C

= 0.15

μPD120N25

μPD120N15

f - Frequency - Hz

μPD120Nxx Series Chapter Title

R03DS0030EJ0400 Rev.4.00 Page 9 of 13

Apr 15, 2011

R•R vs. f VDIF vs. IO

R•R - Ripple Rejection - dB

10 100 1000 10000 100000

= 25°C

= 0.15 A

μPD120N33

μPD120N18

f - Frequency - Hz

VDIF - Dropout Voltage - V

0.2

0.4

0.6

0.8

0 0.05 0.1 0.15 0.2 0.25 0.3

PD120N15

PD120N18

PD120N25

PD120N33

O - Output Current - A

VO vs. IO (

PD120N15) VO vs. IO (

PD120N18)

VO - Output Voltage - V

200 400 600 800

IO - Output Current - A

VO - Output Voltage - V

200 400 600 800

IO - Output Current - A

VO vs. IO (

PD120N25)

VO vs. IO (

PD120N33)

VO - Output Voltage - V

200 400 600 800

IO - Output Current - A

VO - Output Voltage - V

200 400 600 800

IO - Output Current - A

μPD120Nxx Series Chapter Title

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Apr 15, 2011

Package Drawings (Unit: mm)

SC-74A

5 PIN PLASTIC MINI MOLD

C 0.95 (T.P.)

2.9±0.2

0.3

S5TA-95-15A

ITEM MILLIMETERS

detail of lead end

D 0.32+0.05

−0.02

F 1.4 MAX.

0.05±0.05

G 1.1+0.2

−0.1

H 2.8±0.2

I 1.5+0.2

−0.1

J 0.65+0.1

−0.15

K 0.16+0.1

−0.06

R5°±5°

L 0.4±0.2

0.19

0.1

μPD120Nxx Series Chapter Title

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Apr 15, 2011

SC-62

1.6 ±0.2 1.5 ±0.1

0.8 MIN. 2.5 ±0.1

4.0 ±0.25

3.0 TYP.

1.5 TYP.

4.5 ±0.1

0.41

+0.03

–0.05

0.47

±0.06

0.42

±0.06

0.42

±0.06

μPD120Nxx Series Chapter Title

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Apr 15, 2011

Recommended Soldering Conditions

The

PD120Nxx series should be soldered and mounted under the following recommended conditions.

For soldering methods and conditions other than those recommended below, contact a Renesas Electronics sales

representative.

For technical information, see the following website.

Semiconductor Device Mount Manual (http://www.renesas.com/prod/package/manual/)

Surface Mount Device

PD120N15TA-A,

PD120N18TA-A,

PD120N25TA-A,

PD120N33TA-A: SC-74A Note1

PD120N15TA-AT,

PD120N18TA-AT,

PD120N25TA-AT,

PD120N33TA-AT: SC-74A Note1

PD120N15T1B-AY,

PD120N18T1B-AY,

PD120N25T1B-AY,

PD120N33T1B-AY: SC-62 Note2

PD120N15T1B-AZ,

PD120N18T1B-AZ,

PD120N25T1B-AZ,

PD120N33T1B-AZ: SC-62 Note2

Process Conditions Symbol

Infrared Ray Reflow Peak temperature: 260°C or below (Package surface temperature),

Reflow time: 60 seconds or less (at 220°C or higher),

Maximum number of reflows processes: 3 times or less.

IR60-00-3

Partial Heating Method Pin temperature: 350°C or below,

Heat time: 3 seconds or less (Per each side of the device).

P350

Notes 1. Pb-free (This product does not contain Pb in external electrode and other parts.)

2. Pb-free (This product does not contain Pb in external electrode.)

Caution Do not use different soldering methods together (except for partial heating).

Remark Flux: Rosin-based flux with low chlorine content (chlorine 0.2 Wt% or below) is recommended.

Reference Documents

USER’S MANUAL USAGE OF THREE TERMINAL REGULATORS Document No.G12702E Note

INFORMATION VOLTAGE REGULATOR OF SMD Document No.G11872E Note

SEMICONDUCTOR PACKAGE MOUNT MANUAL

http://www.renesas.com/prod/package/index.html

Note Published by the former NEC Electronics Corporation.

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Apr 15, 2011

NOTES FOR CMOS DEVICES

(1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a reflected

wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH

(MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the

device when the input level is fixed, and also in the transition period when the input level passes through the

area between VIL (MAX) and VIH (MIN).

(2) HANDLING OF UNUSED INPUT PINS: Unconnected CMOS device inputs can be cause of malfunction. If

an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc.,

causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS

devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be

connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling

related to unused pins must be judged separately for each device and according to related specifications

governing the device.

(3) PRECAUTION AGAINST ESD: A strong electric field, when exposed to a MOS device, can cause destruction

of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of

static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control

must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators

that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static

container, static shielding bag or conductive material. All test and measurement tools including work benches

and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor

devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with

mounted semiconductor devices.

(4) STATUS BEFORE INITIALIZATION: Power-on does not necessarily define the initial status of a MOS device.

Immediately after the power source is turned ON, devices with reset functions have not yet been initialized.

Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not

initialized until the reset signal is received. A reset operation must be executed immediately after power-on

for devices with reset functions.

(5) POWER ON/OFF SEQUENCE: In the case of a device that uses different power supplies for the internal

operation and external interface, as a rule, switch on the external power supply after switching on the internal

power supply. When switching the power supply off, as a rule, switch off the external power supply and then

the internal power supply. Use of the reverse power on/off sequences may result in the application of an

overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements

due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for

each device and according to related specifications governing the device.

(6) INPUT OF SIGNAL DURING POWER OFF STATE : Do not input signals or an I/O pull-up power supply while

the device is not powered. The current injection that results from input of such a signal or I/O pull-up power

supply may cause malfunction and the abnormal current that passes in the device at this time may cause

degradation of internal elements. Input of signals during the power off state must be judged separately for

each device and according to related specifications governing the device.

All trademarks and registered trademarks are the property of their respective owners.

C - 1

Revision History μPD120Nxx Series Data Sheet

Description

Rev. Date Page Summary

− Jun 2007 − Previous No. : S17145EJ3V0DS00

4.00 Apr 15, 2011 Throughout Addition of Pb-free products (-AT, -AY)

pp.4, 5 Modification of Absolute Maximum Ratings Output Noise Voltage

10 kHz ≤ f ≤ 100 kHz -> 10 Hz ≤ f ≤ 100 kHz

Notice

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Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to

be disclosed by Renesas Electronics such as that disclosed through our website.

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7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product

depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas

Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for

which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the

use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.

The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.

"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;

personal electronic equipment; and industrial robots.

"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically

designed for life support.

"Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical

implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.

8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage

range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the

use of Renesas Electronics products beyond such specified ranges.

9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and

malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the

possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to

redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,

please evaluate the safety of the final products or system manufactured by you.

10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics

products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes

no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.

11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.

12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.

(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.

(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.

http://www.renesas.com

Refer to "http://www.renesas.com/" for the latest and detailed information.

Renesas Electronics America Inc.

2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.

Tel: +1-408-588-6000, Fax: +1-408-588-6130

Renesas Electronics Canada Limited

1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada

Tel: +1-905-898-5441, Fax: +1-905-898-3220

Renesas Electronics Europe Limited

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K

Tel: +44-1628-585-100, Fax: +44-1628-585-900

Renesas Electronics Europe GmbH

Arcadiastrasse 10, 40472 Düsseldorf, Germany

Tel: +49-211-65030, Fax: +49-211-6503-1327

Renesas Electronics (China) Co., Ltd.

7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China

Tel: +86-10-8235-1155, Fax: +86-10-8235-7679

Renesas Electronics (Shanghai) Co., Ltd.

Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China

Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898

Renesas Electronics Hong Kong Limited

Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong

Tel: +852-2886-9318, Fax: +852 2886-9022/9044

Renesas Electronics Taiwan Co., Ltd.

7F, No. 363 Fu Shing North Road Taipei, Taiwan

Tel: +886-2-8175-9600, Fax: +886 2-8175-9670

Renesas Electronics Singapore Pte. Ltd.

1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632

Tel: +65-6213-0200, Fax: +65-6278-8001

Renesas Electronics Malaysia Sdn.Bhd.

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia

Tel: +60-3-7955-9390, Fax: +60-3-7955-9510

Renesas Electronics Korea Co., Ltd.

11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea

Tel: +82-2-558-3737, Fax: +82-2-558-5141

SALES OFFICES

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