TBD62786AFWG,EL - TOSHIBA - Datasheet.Live

TBD62786APG/FNG/FWG

2017-07-05

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

TBD62786APG, TBD62786AFNG, TBD62786AFWG

8-ch low active source type DMOS tr ansist or ar r ay

TBD62786A series are DMOS transistor arrays with 8 circuits. Each output

has an internal clamp diode that clamps the back electromotive force

generated in driving inductive loads. Please be careful about thermal

conditions during use.

Features

• 8 circuits built-in

• High output voltage : VOUT = 50 V (max)

• Large output current : IOUT = -500 mA (max, per 1 ch)

• Input voltage (output on) : -30 to -2.8 V

• Input voltage (output off) : -1.2 to 0 V

• Package : PG type P-DIP18-300-2.54-001

FNG type SSOP18-P-225-0.65

FWG type P-SOP18-0812-1.27-001

Pin connection (top view)

Pin Connection may be omitted partially or simplified for explanatory purposes.

TBD62786APG

P-DIP18-300-2.54-001

TBD62786AFNG

TBD62786AFWG

P-SOP18-0812-1.27-001

Weight

-DIP18-300-2.54-001 : 1.3 g (typ.)

SSOP18

-P-225-0.65 : 0.09 g (typ.)

-SOP18-0812-1.27-001 : 0.48 g (typ.)

VCC

GND

Toshiba Electronic Devices & Storage Corporation

TBD62786APG/FNG/FWG

2017-07-05

Pin description

Pin No. Pin name Function

Input pin

VCC

Power supply pin

GND

GND pin

Output pin

Basic circuit

Basic circuit may be omitted partially or simplified for explanatory purpose.

VCC

OUTPUT

INPUT

Clamp

circuit

Clamp

diode

TBD62786APG/FNG/FWG

2017-07-05

Absolute maximum ratings (Ta = 25°C, VCC = 0 V)

Characteristics Symbol Rating Unit

Power supply voltage VCC-VGND 50 V

Output voltage VOUT -50 to 0.5 V

Output current

(per 1 ch)

IOUT -500 mA

Input voltage VIN −30 to 0.5 V

Clamp diode reverse voltage VR 50 V

Clamp diode forward current IF 500 mA

Power

dissipation

PG (Note 1)

1.47

FNG (Note 2) 0.96

FWG (Note 3) 1.31

Operating temperature Topr −40 to 85 °C

Storage temperature Tstg −55 to 150 °C

Note 1: Stand alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C.

Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy)

When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C.

Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy)

When Ta exceeds 25°C, it is necessary to do the derating with 10.48 mW/°C.

Operating ranges (Ta = −40 to 85°C and VCC = 0 V, unless otherwise specified)

Characteristics

Symbol

Condition

Min

Typ.

Max

Unit

Power supply voltage VCC-VGND IOUT = -100 mA 2.0 ― 50 V

Output voltage VOUT ― -50 ― 0 V

Output current

(per 1 ch)

PG (Note 1)

IOUT

One circuit ON, Ta = 25 °C 0 ― -400

tpw = 25 ms

8 circuits ON

Ta = 85°C

Tj = 120°C

Duty = 10 % 0 ― -390

Duty = 50 % 0 ― -170

FNG (Note 2)

One circuit ON, Ta = 25 °C 0 ― -400

tpw = 25 ms

8 circuits ON

Ta = 85°C

Tj = 120°C

Duty = 10 % 0 ― -320

Duty = 50 % 0 ― -140

FWG (Note 3)

One circuit ON, Ta = 25 °C 0 ― -400

tpw = 25 ms

8 circuits ON

Ta = 85°C

Tj = 120°C

Duty = 10 % 0 ― -370

Duty = 50 % 0 ― -160

Input voltage (Output on) VIN (ON) IOUT = -100 mA or more, VDS = 2.0 V -30 ― -2.8 V

Input voltage (Output off) VIN (OFF) IOUT = -100 μA or less, VDS = 2.0 V -1.2 ― 0 V

Clamp diode forward current IF ― ― ― 400 mA

Note 1: Stand alone

Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy)

Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy)

TBD62786APG/FNG/FWG

2017-07-05

Electrical characteristics (Ta = 25°C and VCC = 0 V, unless otherwise specified)

Characteristics Symbol Test

circuit Condition Min Typ. Max Unit

Output leakage current Ileak 1 VIN = 0 V, VOUT = VGND = -50 V

Ta = 85 °C ― ― 1.0 μA

Output voltage

(Output ON-resistance)

VDS

(RON)

IOUT = -350 mA, VIN = -2.8 V,

VGND = -5.0 V ― 0.56

(1.6)

1.14

(3.25)

(Ω)

IOUT = -200 mA, VIN = -2.8 V,

VGND = -5.0 V ― 0.32

(1.6)

0.65

(3.25)

IOUT = -100 mA, VIN = -2.8 V,

VGND = -5.0 V ― 0.16

(1.6)

0.325

(3.25)

Input current

IIN(ON) 3 VIN = -2.8 V, VGND = -50 V, Output OPEN ― ― -30 μA

IIN(OFF) 4 VIN = 0 V, VGND = -50 V, Output OPEN ― ― 1 μA

Current consumption

(per 1 ch)

CC(ON)

3 VIN = -2.8 V, VGND = -50 V, Output OPEN ― ― 5 mA

ICC(OFF) 4 VIN = 0 V, VGND = -50 V, Output OPEN ―

―

1 μA

Clamp diode leakage current IR 5 VR = 50 V, Ta = 85 °C ― ― 1 μA

Clamp diode forward voltage VF 6 IF = 350 mA ―

―

2.0 V

Turn-on delay tON

VOUT = VGND = -50 V

RL = 160 Ω

CL = 15 pF

― 0.2 ―

μs

Turn-off delay tOFF ― 2.0 ―

TBD62786APG/FNG/FWG

2017-07-05

Test circuit

1. Ileak 2. VDS (RON)

3. IIN(ON), ICC(ON) 4. IIN(OFF), ICC(OFF)

5. IR 6. VF

Test circuits may be omitted partially or simplified for explanatory purpose.

Ileak

OUTPUT

GND

VCC

INPUT

VIN

VGND

VOUT

RON = VDS / IOUT

VDS

IOUT

OUTPUT

GND

VCC

INPUT

VIN

VGND

VOUT

OUTPUT

GND

VCC

INPUT

VIN

VGND

IlN(ON)

ICC(ON)

OUTPUT

GND

VCC

INPUT

OUTPUT

GND

VCC

INPUT

OUTPUT

GND

VCC

INPUT

VIN

VGND

IlN(OFF)

ICC(OFF)

TBD62786APG/FNG/FWG

2017-07-05

7. tON, tOFF

Note 1: Pulse width 50 μs, Duty cycle 10%

Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns

Note 2: CL includes capacitance of the probe and the test board.

Test circuit and timing charts may be omitted partially or simplified for explanatory purpose.

Precautions for Using

This IC does not incorporate protection circuits for over current and over voltage.

Therefore, if the short-circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred,

the current or voltage beyond the absolute maximum rating is impressed, and IC may be destroyed. When designing,

please consider enough in power supply line, output line, and GND line.

In addition, so as not to continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the

appropriate fuse in the power supply line.

(注2)

(注1)

Input

(

Note 2)

(Note 1)

Pulse

generator

VCC

Output

OUT

GND

tON

tOFF

0 V

VOH

VOL

Input

50%

50 μs

Output

50%

-5.0

TBD62786APG/FNG/FWG

2017-07-05

Package dimensions

P-DIP18-300-2.54-001 Unit: mm

Weight: 1.3 g (typ.)

SSOP18-P-225-0.65 Unit: mm

Weight: 0.09 g (typ.)

TBD62786APG/FNG/FWG

2017-07-05

P-SOP18-0812-1.27-001 Unit: mm

Weight: 0.48 g (typ.)

TBD62786APG/FNG/FWG

2017-07-05

Notes on Contents

1. Pin Connection

Pin connection may be simplified for explanatory purpose.

2. Basic Circuit

Basic circuit may be simplified for explanatory purpose.

3. Timing Chart

Timing charts may be simplified for explanatory purposes.

4. Test circuit

Test circuit may be simplified for explanatory purpose.

IC Usage Considerations

Notes on handling of ICs

(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a

moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or

deterioration, and may result in injury by explosion or combustion.

(2) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of

power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute

maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result

in injury by explosion or combustion. In addition, do not use any device inserted in the wrong orientation or incorrectly

to which current is applied even just once.

(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of

overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute

maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or

load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the

effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time

and insertion circuit location, are required.

(4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to

prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the

negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or

ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the

protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.

(5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such

as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input

or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a

speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may

cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL)

connection-type IC that inputs output DC voltage to a speaker directly.

Points to remember on handling of ICs

Heat Radiation Design

When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is

appropriately radiated, in order not to exceed the specified junction temperature (Tj) at any time or under any condition.

These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life,

deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the

effect of IC heat radiation with peripheral components.

Back-EMF

When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply

owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power

supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take

the effect of back-EMF into consideration in system design.

TBD62786APG/FNG/FWG

2017-07-05

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