© Semiconductor Components Industries, LLC, 2015
August, 2017 Rev. 2
1Publication Order Number:
MBRS320P/D
MBRS320P, MBRS330P,
MBRS340P
Surface Mount
Schottky Power Rectifier
These devices employ the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
(0.5 V Max @ 3.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard-Ring for Stress Protection
Device Passes ISO 7637 Pulse #1
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
Case: Epoxy, Molded, Epoxy Meets UL 94 V0
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
Device Package Shipping
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
MBRS320PT3G SMC 2Lead
(PbFree)
2,500 /
Tape & Reel
MARKING DIAGRAM
B3x = Device Code
x = 2, 3 or 4
A = Assembly Location*
Y = Year
WW = Work Week
G= PbFree Package
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRS330PT3G SMC 2Lead
(PbFree)
2,500 /
Tape & Reel
MBRS340PT3G SMC 2Lead
(PbFree)
2,500 /
Tape & Reel
(Note: Microdot may be in either location)
AYWW
B3xG
G
SMC 2LEAD
CASE 403AC
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
MBRS320P, MBRS330P, MBRS340P
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol MBRS320PT3G MBRS330PT3G MBRS340PT3G Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 V
Average Rectified Forward Current IF(AV) 3.0 @ TL = 110°C
4.0 @ TL = 105°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM 80
A
Operating Junction Temperature TJ65 to +150 °C
ISO 7637 Pulse #1
(100 V, 10W)5000
Pulses
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoLead RqJL 11 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 A, TJ = 25°C)
VF0.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR2.0
20
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
10
0.1
0.20 0.4 0.6
VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
1
0.8
iF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
TJ = 25°C
TJ = 125°CTJ = 100°C
TJ = 65°C
VF
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
iF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
1.00.30.1 0.5 0.7 0.9
10
0.1
0.20 0.4 0.6
1
0.8
TJ = 25°C
TJ = 125°CTJ = 100°C
TJ = 65°C
0.30.1 0.5 0.7 0.9 1.0
TJ = 40°CTJ = 40°C
MBRS320P, MBRS330P, MBRS340P
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
0202510 30
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
35 40
IR, REVERSE CURRENT (AMPS)
TJ = 25°C
TJ = 125°C
TJ = 100°C
1.E06
1.E04
1.E03
1.E02
1.E01
0202510 30
VR, REVERSE VOLTAGE (V)
35 40
IR, MAXIMUM REVERSE CURRENT (AMPS)
TJ = 25°C
TJ = 125°C
TJ = 100°C
1.E06
1.E04
1.E03
1.E02
1.E01
015090 100 110 120
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
130 140
IO, AVERAGE FORWARD CURRENT (AMPS)
0
40123
IO, AVERAGE FORWARD CURRENT (A)
1.6
4.5 5
PFO, AVERAGE POWER DISSIPATION (W)
1
2
3
4
5
SQUARE WAVE
dc
0.2
0.4
0.6
0.8
1.8
2
0.5
1.5
2.5
3.5
4.5
3.52.51.50.5
SQUARE
WAVE dc
IPK/IO = 5
IPK/IO = p
1.E05
515 515
1
1.2
1.4
1.E05
Freq = 20 kHz
RqJL = 11°C/W
Figure 7. Typical Capacitance
700
0
360162024
VR, REVERSE VOLTAGE (V)
100
28 32 40
C, CAPACITANCE (pF)
TJ = 25°C
200
300
400
500
600
4812
TYPICAL CAPACITANCE AT 0 V = 658 pF
MBRS320P, MBRS330P, MBRS340P
www.onsemi.com
4
PACKAGE DIMENSIONS
J
SMC 2LEAD
CASE 403AC
ISSUE B
J
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
E
b
D
c
L
A1
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD
FLASH SHALL NOT EXCEED 0.254mm PER SIDE.
4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA
DETERMINED BY DIMENSION L.
TOP VIEW
SIDE VIEW END VIEW
H
DETAIL A
DETAIL A
SOLDERING FOOTPRINT*
8.750
0.344
3.790
0.149
2.250
0.089 ǒmm
inchesǓSCALE 4:1
DIM
A2
MIN MAX MIN
MILLIMETERS
1.90 2.41 0.075
INCHES
A1 0.05 0.20 0.002
b2.90 3.20 0.114
c0.15 0.41 0.006
D5.55 6.25 0.219
E6.60 7.15 0.260
L0.75 1.60 0.030
0.095
0.008
0.126
0.016
0.246
0.281
0.063
MAX
7.75 8.15 0.305 0.321
HE
2X
2X
E
A2
A1.95 2.61 0.077 0.103
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MBRS320P/D
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