Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 100V
▼ Lower Gate Charge RDS(ON) 30mΩ
▼ Fast Switching Characteristic ID21.8A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data and specifications subject to change without notice
AP50T10GI-HF
Halogen-Free Product
Parameter Rating
Drain-Source Voltage 100
Gate-Source Voltage +20
Continuous Drain Current, VGS @ 10V 21.8
Storage Temperature Range
Continuous Drain Current, VGS @ 10V 13.8
Pulsed Drain Current180
Total Power Dissipation 31.3
-55 to 150
Total Power Dissipation 1.92
Operating Junction Temperature Range -55 to 150
201112121
Thermal Data Parameter
1
G
D
S
A
dvanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
GDSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=16A - - 30 mΩ
VGS=5V, ID=12A - - 70 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=16A - 21 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=16A - 44 70 nC
Qgs Gate-Source Charge VDS=80V - 7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 20 - nC
td(on) Turn-on Delay Time VDS=50V - 10.5 - ns
trRise Time ID=16A - 26 - ns
td(off) Turn-off Delay Time RG=1Ω-28-ns
tfFall Time VGS=10V - 10 - ns
Ciss Input Capacitance VGS=0V - 1840 2940 pF
Coss Output Capacitance VDS=25V - 190 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF
RgGate Resistance f=1.0MHz - 1.7 3.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=16A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=10A, VGS=0V - 40 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 64 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP50T10GI-HF
A
P50T10GI-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
20
40
60
80
100
0481216
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
6.0V
5.0V
VG=4.0V
0
20
40
60
80
0 4 8 12 16 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
VG=4.0V
TC=150oC
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=16A
VG=10V
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0
0.4
0.8
1.2
1.6
2
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
Normalized VGS(th) (V)
20
30
40
50
60
246810
VGS Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=12A
TC=25oC
I
D=250uA
AP50T10GI-H
F
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Maximum Continuous Drain Current Fig 12. Gate Charge Waveform
v.s. Case Temperature
4
0
2
4
6
8
10
12
0 102030405060
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=16A
VDS =80V
Q
VG
10V
QGS QGD
QG
Charge
0
1000
2000
3000
1 5 9 13 17 21 25 29
VDS ,Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1000
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
ingle Pulse
100us
1ms
10ms
100ms
DC
Operation in this
area limited by
RDS(ON)
0
4
8
12
16
20
24
25 50 75 100 125 150 175
TC , Case Temperature ( oC )
ID , Drain Current (A)
