A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specif i cations are subjec t to chage without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1 mA 45 V
BVCER IC = 5 mA RBE = 10 45
V
BVEBO IE = 10 mA 3.5 V
ICES VCB = 28 V 0.5 mA
hFE VCE = 5.0 V IC = 100 mA 15 120 ---
COB VCB = 28 V f = 1.0 MHz 2.5 pF
PG
η
ηη
ηC VCC = 28 V POUT = 0.5 W f = 4.0 GHz 5.0
25
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI4000
DESCRIPTION:
The ASI 4000 is Designed for G ener al
Purpose Class C Power Amplif ier
Applications up to 4200 MHz.
FEATURES:
PG = 5 dB min. at 0.5 W / 4, 000 MHz
Hermetic Microstrip Package
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.15 A
VCC 30 V
PDISS 3.89 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 45 OC/W
PACKAGE STYLE .250 2L FLG
ORDER CODE: ASI10541
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm
.117 / 2.97
H.560 / 14.22 .570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G I
J
K
H F
BE
C
ØD
A
N
MP
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19 .185 / 4.70
.135 / 3.43.119 / 3.02
.125 / 3.18