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02/08/2010
IRFH5004PbF
HEXFET® Power MOSFET
Notes through are on page 8
PD -97450
Features and Benefits
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features Benefits
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V
h
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V
h
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation
g
P
D
@ T
C(Bottom)
= 25°C Power Dissipation
g
Linear Derating Factor
g
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
28
100
400
±20
40
23
100
-55 to + 150
3.6
0.029
250
Note
Form Quantit
y
IRFH5004TRPBF PQFN 5mm x 6mm Ta
p
e and Reel 4000
IRFH5004TR2PBF PQFN 5mm x 6mm Ta
p
e and Reel 1000
Orderable part number Package Type Standard Pack
Low R
DSon
(≤ 2.6mΩ)Lower Conduction Losses
Low Thermal Resistance to PCB (≤ 0.5°C/W) Enables better thermal dissipation
100% R
g
tested Increased Reliability
Low Profile (≤ 0.9 mm) results in Increased Power Density
Industry-Standard Pinout ⇒Multi-Vendor Compatibility
Compatible with Existin
g
Surface Mount Techniques Easier Manufacturin
g
RoHS Compliant Containin
g
no Lead, no Bromide and no Halo
g
en Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
V
DS
40 V
R
DS(on) max
(@V
GS
= 10V)
2.6 mΩ
Q
g (typical)
73 nC
R
G (typical)
1.2 Ω
I
D
(@T
c(Bottom)
= 25°C)
100
h
A
IRFH5004PbF
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S
D
G
Thermal Resistance
Parameter Typ. Max. Units
RθJC (Bottom) Junction-to-Case
f
––– 0.5
RθJC (Top) Junction-to-Case
f
––– 15 °C/W
RθJA Junction-to-Ambient
g
––– 35
RθJA (<10s) Junction-to-Ambient
g
––– 33
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
∆ΒV
DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.1 2.6
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
∆V
GS(th)
Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 91 ––– ––– S
Q
g
Total Gate Charge ––– 73 110
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 15 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 6.1 –––
Q
gd
Gate-to-Drain Charge ––– 27 –––
Q
godr
Gate Charge Overdrive ––– 25 ––– See Fig.17 & 18
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)––– 33.1 –––
Q
oss
Output Charge ––– 27 ––– nC
R
G
Gate Resistance ––– 1.2 ––– Ω
t
d(on)
Turn-On Delay Time ––– 13 –––
t
r
Rise Time ––– 39 –––
t
d(off)
Turn-Off Delay Time ––– 28 –––
t
f
Fall Time ––– 16 –––
C
iss
Input Capacitance ––– 4490 –––
C
oss
Output Capacitance ––– 970 –––
C
rss
Reverse Transfer Capacitance ––– 460 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
le Pulse Avalanche Ener
y
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
h
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 32 48 ns
Q
rr
Reverse Recovery Charge ––– 100 150 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 150µA
A
100
––– ––– 400
––– –––
nA
ns
pF
nC
Conditions
See Fig.15
Max.
340
50
ƒ = 1.0MHz
V
DS
= 20V
–––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
e
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 10V
I
D
= 50A
V
GS
= 0V
V
DS
= 20V
V
GS
= 20V
V
GS
= -20V
V
DS
= 40V, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 20V
di/dt = 300A/µs
e
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 10V
Typ.
–––
R
G
=1.8Ω
V
DS
= 15V, I
D
= 50A
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
mΩ
µA
I
D
= 50A
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Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.8V
≤60µs PULSE WIDTH
Tj = 25°C
3.8V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
3.8V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.8V
234567
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 15V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
VGS = 10V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 102030405060708090100
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
ID= 50A
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
25 50 75 100 125 150
TC , Case Temperature (°C)
0
50
100
150
200
250
ID, Drain Current (A)
Limited By Package
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th), Gate threshold Voltage (V)
ID = 150µA
ID = 500µA
ID = 1.0mA
ID = 1.0A
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
DC
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Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
46810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
1
2
3
4
5
6
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 50A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 11A
17A
BOTTOM 50A
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Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
1K
VCC
DUT
0
L
S
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
XXXX
XYWWX
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
MARKING CODE
(Per Marking Spec)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
DATE CODE
PIN 1
IDENTIFIER LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Outline "B" Package Details
PQFN 5x6 Outline "B" Part Marking
IRFH5004PbF
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Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test
capability.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2010
Data and specifications subject to change without notice.
MS L1
( per JEDEC J-ST D-020D††† )
RoHS compliant Yes
PQFN 5mm x 6mm
Qualification information†
Moisture Sensitivity Level
Qualification level Industrial††
( per JEDEC JESD47F ††† guidelines )
PQFN 5x6 Outline "B" Tape and Reel