MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
http://onsemi.com
2
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Fi gure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device Marking Package Shipping†Min Nom Max Typ Min Typ Max
MMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2
MMBV2101LT1G M4G SOT−23
(Pb−Free) 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2
MMBV2101L M4G SOT−23 Bulk (Note 1) 6.1 6.8 7.5 450 2.5 2.7 3.2
MV2101 MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2
MV2101G MV2101 TO−92
(Pb−Free) 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2
MMBV2103LT1 4H SOT−23 3,000 / Tape & Reel 9.0 10 11 400 2.5 2.9 3.2
MMBV2105LT1 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2105LT1G 4U SOT−23
(Pb−Free) 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2105L 4U SOT−23 Bulk (Note 1) 13.5 15 16.5 400 2.5 2.9 3.2
MV2105 MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2
MV2105G MV2105 TO−92
(Pb−Free) 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2107LT1 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2107LT1G 4W SOT−23
(Pb−Free) 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2107L 4W SOT−23 Bulk (Note 1) 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2108LT1 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2
MMBV2108LT1G 4X SOT−23
(Pb−Free) 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2
LV2209 LV2209 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109LT1 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109LT1G 4J SOT−23
(Pb−Free) 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109L 4J SOT−23 Bulk (Note 1) 29.7 33 36.3 200 2.5 3.0 3.2
MV2109 MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
MV2109G MV2109 TO−92
(Pb−Free) 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = C C + CJ). C T is m easured a t 1 .0 M Hz u sing a c apacitance
bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q i s c alculated b y t aking t he G and C r eadings o f a n a dmittance
bridge at the specified frequency and substituting in the
following equations:
Q+2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use L ead
Length [ 1/16″.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC i s g uaranteed by comparing CT at VR = 4 .0 Vdc, f = 1.0
MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1 .0 MHz, TA
= +85°C in the following equation, which defines TCC:
TCC+ŤCT()85°C) – CT(–65°C)
85 )65 Ť·106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.