ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A FEATURES * * * * * * * * * * * TO-200AB (E-PUK) Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt International standard case TO-200AB (E-PUK) High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) * * * * 620 A Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2 t UNITS 620 A 55 C 1180 A 25 C 50 Hz 7950 60 Hz 8320 50 Hz 316 60 Hz 289 VDRM/VRRM tq VALUES Range TJ A kA2s 400 to 1200 V 10 to 30 s - 40 to 125 C Note * tq = 10 to 20 s for 400 to 800 V devices tq = 15 to 30 s for 1000 to 1200 V devices ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 ST303C..C Document Number: 94373 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 www.vishay.com 1 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180 el ITM UNITS 100 s 180 el 50 Hz 1314 1130 2070 1940 6930 6270 400 Hz 1260 1040 2190 1880 3440 2960 1000 Hz 900 700 1900 1590 1850 1540 2500 Hz 340 230 910 710 740 Voltage before turn-on Vd 50 50 VDRM VDRM VDRM Rise of on-state current dI/dt 50 Heatsink temperature 40 Equivalent values for RC circuit 560 50 Recovery voltage Vr 55 10/0.47 40 A V 55 10/0.47 A/s 40 55 C /F 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t Maximum peak on-state voltage VTM VALUES UNITS 620 (230) A 55 (85) C 1180 7950 No voltage reapplied 8320 100 % VRRM reapplied 7000 No voltage reapplied 6690 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 316 289 224 3160 ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.16 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.44 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.48 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.57 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.56 Maximum holding current IH TJ = 25 C, IT > 30 A 600 Typical latching current IL TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A 1000 For technical questions, contact: ind-modules@vishay.com kA2s 204 t = 0.1 to 10 ms, no voltage reapplied Low level value of threshold voltage www.vishay.com 2 A klA2s V m mA Document Number: 94373 Revision: 25-Jul-08 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A Vishay High Power Products SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current VALUES UNITS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt 1000 A/s td TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source 0.83 tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code dI/dt Typical delay time minimum Maximum turn-off time (1) maximum TEST CONDITIONS 10 s 30 Note (1) t = 10 to 20 s for 400 to 800 V devices; t = 15 to 30 s for 1000 to 1200 V devices q q BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/s Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.020 DC operation double side cooled 0.010 Mounting force, 10 % Approximate weight Case style Document Number: 94373 Revision: 25-Jul-08 See dimensions - link at the end of datasheet For technical questions, contact: ind-modules@vishay.com C K/W 9800 (1000) N (kg) 83 g TO-200AB (E-PUK) www.vishay.com 3 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.010 0.010 0.007 0.007 120 0.012 0.012 0.012 0.013 90 0.015 0.015 0.016 0.017 60 0.022 0.022 0.023 0.023 30 0.036 0.036 0.036 0.037 TEST CONDITIONS UNITS TJ = TJ max. K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST303C..C Series (Single side cooled) RthJ-hs (DC) = 0.09 K/W 120 110 100 O 90 Conduction angle 80 70 180 60 30 50 60 ST303C..C Series (Double side cooled) RthJ-hs (DC) = 0.04 K/W 120 90 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 130 110 100 90 O Conduction angle 80 70 60 50 180 40 30 120 30 0 100 50 150 250 200 300 350 400 0 Average On-State Current (A) 120 100 200 300 400 500 600 700 800 130 130 ST303C..C Series (Single side cooled) RthJ-hs (DC) = 0.09 K/W 110 100 90 O 80 Conduction period 70 60 50 60 40 30 DC 90 30 ST303C..C Series (Double side cooled) RthJ-hs (DC) = 0.04 K/W 120 Maximum Allowable Heatsink Temperature (C) 120 Maximum Allowable Heatsink Temperature (C) 90 Average On-State Current (A) Fig. 3 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics 180 110 100 90 O 80 Conduction period 70 60 50 DC 40 180 30 120 30 60 90 120 20 20 0 100 200 300 400 500 600 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics www.vishay.com 4 60 20 40 700 0 200 400 600 800 1000 1200 Average On-State Current (A) Fig. 4 - Current Ratings Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94373 Revision: 25-Jul-08 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A 8000 180 120 90 60 30 1800 1600 1400 1200 RMS limit 1000 800 O 600 Conduction angle 400 ST303C..C Series TJ = 125 C 200 7000 6500 6000 5500 5000 4500 4000 3500 ST303C..C Series 3000 0 0 100 200 300 400 500 600 700 0.01 800 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled DC 180 120 90 60 30 2400 2000 1600 RMS limit 1200 O 800 Conduction period 400 ST303C..C Series TJ = 125 C 0 0 200 400 600 800 1000 Instantaneous On-State Current (A) Average On-State Current (A) Fig. 5 - On-State Power Loss Characteristics 2800 Maximum Average On-State Power Loss (W) Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 7500 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 2000 7500 5500 5000 4500 4000 3500 TJ = 125 C ST303C..C Series 100 1 2 3 4 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Document Number: 94373 Revision: 25-Jul-08 6 7 8 0.1 Steady state value RthJ-hs = 0.09 K/W (Single side cooled) RthJ-hs = 0.04 K/W (Double side cooled) (DC operation) 0.01 ST303C..C Series 3000 1 5 ST303C..C Series ZthJ-hs - Transient Thermal Impedance (K/W) 6000 TJ = 25 C 1 Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 6500 1000 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics At any rated load condition and with rated VRRM applied following surge 7000 10 000 0 1200 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Peak Half Sine Wave On-State Current (A) Vishay High Power Products 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors 320 ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 300 280 260 240 220 200 180 160 140 120 ST303C..C Series TJ = 125 C 100 80 10 20 30 40 50 60 70 80 90 100 dI/dt - Rate of Fall of On-State Current (A/s) Fig. 11 - Reverse Recovered Charge Characteristics Irr - Maximum Reverse Recovery Current (A) Qrr - Maximum Reverse Recovery Charge (C) (PUK Version), 620 A 180 140 120 100 80 ST303C..C Series TJ = 125 C 60 40 20 10 20 30 40 50 60 70 80 90 100 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 12 - Reverse Recovered Current Characteristics 10 000 50 Hz 200 400 100 500 1000 Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM 1500 1000 2000 2500 3000 ST303C..C Series Sinusoidal pulse TC = 40 C tp Peak On-State Current (A) 10 000 Peak On-State Current (A) ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 160 200 400 50 Hz 100 500 1000 Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM 1000 1500 2000 2500 ST303C..C Series Sinusoidal pulse TC = 55 C 3000 tp 100 100 10 100 1000 10 000 10 100 Pulse Basewidth (s) 1000 10 000 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics 10 000 Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM 200 50 Hz 100 500 400 1000 1000 1500 2000 2500 3000 tp ST303C..C Series Trapezoidal pulse TC = 40 C dI/dt = 50 A/s 100 10 100 1000 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM 50 Hz 200 100 500 400 1000 1000 1500 2000 2500 tp 3000 100 10 Pulse Basewidth (s) 100 ST303C..C Series Trapezoidal pulse TC = 55 C dI/dt = 50 A/s 1000 10 000 Pulse Basewidth (s) Fig. 14 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94373 Revision: 25-Jul-08 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A 10 000 Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM Peak On-State Current (A) 10 000 Peak On-State Current (A) Vishay High Power Products 50 Hz 200 100 500 400 1000 1000 1500 2000 ST303C..C Series Trapezoidal pulse TC = 40 C dI/dt = 100 A/s 2500 3000 tp Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM 400 100 1000 200 100 500 1000 1000 1500 ST303C..C Series Trapezoidal pulse TC = 55 C dI/dt = 100 A/s 2000 2500 10 10 000 tp 3000 100 100 10 50 Hz 100 Pulse Basewidth (s) 1000 10 000 Pulse Basewidth (s) Fig. 15 - Frequency Characteristics 100 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 10 000 10 3 5 2 1 1000 0.5 0.4 100 ST303C..C Series Sinusoidal pulse ST303C..C Series Rectangular pulse dI/dt = 50 A/s tp 10 000 20 joules per pulse 3 1000 10 5 2 1 0.5 100 0.4 tp 10 10 10 100 1000 10 000 10 100 1000 10 000 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s TJ = 40 C (b) TJ = 25 C 1 tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (a) TJ = 125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST303C..C Series 0.1 Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94373 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A ORDERING INFORMATION TABLE Device code ST 30 3 C 12 C H K 1 - P 1 2 3 4 5 6 7 8 9 10 11 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn-off 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (E-PUK) 7 - Reapplied dV/dt code (for tq test condition) 8 - tq code dV/dt (V/s) 10 tq (s) 12 up to 800 V 15 20 9 - 0 = Eyelet terminals (gate and aux. cathode unsoldered leads) tq (s) dV/dt - tq combinations available 20 CN CM CL CK 50 DN DM DL DK 100 EN EM EL EK 200 FN* FM FL* FK* 400 HN HM HL HK CL 15 CP DP 18 20 CK DK EK FK* HK only for 1 = Fast-on terminals CJ DJ EJ FJ* HJ 1000/1200 V 25 - DH EH FH HH 30 (gate and aux. cathode unsoldered leads) * Standard part number. 2 = Eyelet terminals All other types available only on request. (gate and aux. cathode soldered leads) 3 = Fast-on terminals (gate and aux. cathode soldered leads) 10 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 11 - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95075 For technical questions, contact: ind-modules@vishay.com Document Number: 94373 Revision: 25-Jul-08 Outline Dimensions Vishay Semiconductors TO-200AB (E-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1/15.1 (0.56/0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95075 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Revision: 12-Mar-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: ST303C12LFK0L ST303C12LFK1L ST303C12CCL1 ST303C12CFK0L ST303C12CFK1L VS-ST303C12CFJ0 VSST303C12LFK0 VS-ST303C10CFK0 VS-ST303C04LFK0 VS-ST303C08LFN0 VS-ST303C08LFN1 VSST303C12CFK0 VS-ST303C04CFL1 VS-ST303C12LFH0 VS-ST303C10LFJ0 VS-ST303C10CFJ0 VSST303C04CFN1 VS-ST303C08CFK1 VS-ST303C04CFL0 VS-ST303C12CFK1 VS-ST303C12LFJ1 VSST303C12CFJ1 VS-ST303C08CFN1 VS-ST303C12LFK1 VS-ST303C08CFL1 VS-ST303C04LFL0 VSST303C08LFL1