MIXA61H1200ED - LITTELFUSE

20110509a

MIXA 61H1200ED

IXYS reserves the right to change limits, test conditions and dimensions.

IGBT XPT Module

H Bridge

VCES = 1200 V

IC25 = 85 A

VCE(sat) = 1.8 V

Features:

• Easy paralleling due to the positive

temperature coefﬁcient of the on-state

voltage

• Rugged XPT design

(Xtreme light Punch Through) results in:

- short circuit rated for 10 µsec.

- very low gate charge

- square RBSOA @ 3x IC

- low EMI

• Thin wafer technology combined with

the XPT design results in a competitive

low VCE(sat)

• SONIC™ diode

- fast and soft reverse recovery

- low operating forward voltage

Application:

• AC motor drives

• Solar inverter

• Medical equipment

• Uninterruptible power supply

• Air-conditioning systems

• Welding equipment

• Switched-mode and

resonant-mode power supplies

Package:

• "E2-Pack" standard outline

• Insulated copper base plate

• Soldering pins for PCB mounting

Part name (Marking on product)

MIXA 61H1200ED

E72873

Preliminary data

16

9

10

11

12

1

2

3

4

D5

17

14

13

D1

D2 D6

T1

T2

T5

T6

20110509a

MIXA 61H1200ED

IXYS reserves the right to change limits, test conditions and dimensions.

Ouput Inverter T1 - T6

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

VCES collector emitter voltage TVJ = 25°C 1200 V

VGES

VGEM

max. DC gate voltage

max. transient collector gate voltage

continuous

transient

±20

±30

V

IC25

IC80

collector current TC = 25°C

TC = 80°C

85

60

A

Ptot total power dissipation TC = 25°C 290 W

VCE(sat) collector emitter saturation voltage IC = 55 A; VGE = 15 V TVJ = 25°C

TVJ = 125°C

1.8

2.1

2.1 V

V

VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE TVJ = 25°C 5.4 6.0 6.5 V

ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C

TVJ = 125°C 0.2

0.5 mA

mA

IGES gate emitter leakage current VGE = ±20 V 500 nA

QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 50 A 165 nC

td(on)

tr

td(off)

tf

Eon

Eoff

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load TVJ = 125°C

VCE = 600 V; IC = 50 A

VGE = ±15 V; RG = 15 W

70

40

250

100

4.5

5.5

ns

mJ

RBSOA reverse bias safe operating area

V

GE

= ±15 V; R

G

= 15 W;

TVJ = 125°C

VCEK = 1200 V 150 A

SCSOA

tSC

ISC

short circuit safe operating area

short circuit duration

short circuit current

VCE = 900 V; VGE = ±15 V; TVJ = 125°C

RG = 15 W; non-repetitive 200

10 µs

A

RthJC thermal resistance junction to case (per IGBT) 0.43 K/W

Output Inverter D1 - D6

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V

IF25

IF80

forward current TC = 25°C

TC = 80°C

85

57

A

VFforward voltage IF = 60 A; VGE = 0 V TVJ = 25°C

TVJ = 125°C

1.95

2.2 V

V

Qrr

IRM

trr

Erec

reverse recovery charge

max. reverse recovery current

reverse recovery time

reverse recovery energy

VR = 600 V

diF /dt = -1200 A/µs TVJ = 125°C

IF = 60 A; VGE = 0 V

8

60

350

2.5

µC

A

ns

mJ

RthJC thermal resistance junction to case (per diode) 0.6 K/W

TC = 25°C unless otherwise stated

20110509a

MIXA 61H1200ED

IXYS reserves the right to change limits, test conditions and dimensions.

Module

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

TVJ

TVJM

Tstg

operating temperature

max. virtual junction temperature

storage temperature

-40

125

150

125

°C

VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 3000 V~

CTI comparative tracking index -

Mdmounting torque (M5) 3 6 Nm

dS

dA

creep distance on surface

strike distance through air

6

mm

Rpin-chip resistance pin to chip 5 mW

RthCH thermal resistance case to heatsink with heatsink compound 0.02 K/W

Weight 180 g

Equivalent Circuits for Simulation

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

V0

R0

IGBT T1 - T6 TVJ = 150°C 1.1

25.1

V

mW

V0

R0

free wheeling diode D1 - D6 TVJ = 150°C 1.22

12.99

V

mW

I

V

0

R

0

TC = 25°C unless otherwise stated

20110509a

MIXA 61H1200ED

IXYS reserves the right to change limits, test conditions and dimensions.

XXXXXXXXXX yywwx

Logo UL Part name Date Code

2D Data Matrix:

FOSS-ID 6 digits

Batch # 6 digits

Location

Part number

M = Module

I = IGBT

X = XPT

A = standard

61 = Current Rating [A]

H = H~ Bridge

1200 = Reverse Voltage [V]

ED = E2-Pack

Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code

Standard MIXA61H1200ED MIXA61H1200ED Box 6 511060

Circuit Diagram

Outline Drawing Dimensions in mm (1 mm = 0.0394“)

Product Marking

16

9

10

11

12

1

2

3

4

D5

17

14

13

D1

D2 D6

T1

T2

T5

T6

20110509a

MIXA 61H1200ED

IXYS reserves the right to change limits, test conditions and dimensions.

0 1 2 3

0

20

40

60

80

100

0 20 40 60 80 100 120

0

2

4

6

8

10

0 1 2 3 4

0

20

40

60

80

100

V

CE

[V]

I

C

[A]

Q

G

[nC]

V

GE

[V]

9 V

11 V

5 6 7 8 9 10 11 12 13

0

20

40

60

80

100

0 40 80 120 160 200 240

0

5

10

15

20

T

VJ

= 25°C

T

VJ

= 125°C

T

VJ

= 25°C

T

VJ

= 125°C

13 V

12 16 20 24 28 32

4.0

4.5

5.0

5.5

6.0

E

[mJ]

E

off

T

VJ

= 125°C

Fig. 1 Typ. output characteristics

V

GE

= 15 V

V

CE

[V]

I

C

[A]

V

GE

= 15 V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. tranfer characteristics

V

GE

[V]

Fig. 4 Typ. turn-on gate charge

Fig. 5 Typ. switching energy vs. collector current

E

on

Fig. 6 Typ. switching energy vs. gate resistance

R

G

[Ω]

E

[mJ]

I

C

[A]

E

on

E

off

R

G

= 15 W

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

I

C

= 50 A

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

I

C

= 50 A

V

CE

= 600 V

Inverter T1 - T6

W

20110509a

MIXA 61H1200ED

IXYS reserves the right to change limits, test conditions and dimensions.

600 700 800 900 1000 1100 1200 1300

0.0

0.8

1.6

2.4

3.2

4.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

20

40

60

80

100

120

E

rec

[mJ]

I

C

[A]

V

F

[V] di

F

/dt [A/µs]

T

VJ

= 125°C

T

VJ

= 25°C

T

VJ

= 125°C

V

R

= 600 V

30 A

60 A

120 A

Fig. 7 Typ. Forward current versus V

F

Fig. 8 Typ. recovery energy E

rec

versu versus di/dt

Fig. 9 Typ. NTC resistance versus temperature

25 50 75 100 125 150

100

1000

10000

100000

R

[Ω]

T

C

[°C]

0.001 0.01 0.1 1 10

0.01

0.1

1

t

p

[s]

Z

thJC

[K/W]

Fig. 10 Typ. transient thermal impedance

IGBT

Diode

IGBT FRD

RitiRiti

1 0.1 0.0025 0.137 0.0025

2 0.05 0.03 0.1 0.03

3 0.21 0.03 0.233 0.03

4 0.07 0.08 0.13 0.08

Inverter D1 - D6

9