2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 High Voltage Switching Applications * High voltage: VCEO = -150 V * High transition frequency: fT = 120 MHz (typ.) * Small flat package * PC = 1 to 2 W (mounted on a ceramic substrate) * Complementary to 2SC2880 Unit: mm Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Base current IB -10 mA PC 500 Collector power dissipation PC (Note 1) Junction temperature Storage temperature range PW-MINI mW 800 Tj 150 C Tstg -55 to 150 C JEDEC JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2 Note 1: 2SA1200 mounted on a ceramic substrate (250 mm x 0.8 t) 1 2004-07-07 2SA1200 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -150 V, IE = 0 -0.1 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 A VCE = -5 V, IC = -10 mA 70 240 hFE DC current gain (Note 2) Collector-emitter saturation voltage VCE (sat) IC = -10 mA, IB = -1 mA -0.8 V Base-emitter voltage VBE VCE = -5 V, IC = -30 mA -0.9 V Transition frequency fT VCE = -30 V, IC = -10 mA 120 MHz VCB = -10 V, IE = 0, f = 1 MHz 4.0 5.0 pF Collector output capacitance Cob Note 2: hFE classification O: 70 to 140, Y: 120 to 240 Marking Part No. (or abbreviation code) B Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1200 IC - VCE hFE - IC -50 500 -2 mA Common emitter Ta = 25C hFE -500 A -300 A DC current gain (mA) Collector current IC -40 Common emitter 300 Ta = 25C -1 mA -30 -200 A -20 VCE = -10 V 100 50 -5 30 -2 IB = -100 A -10 10 -0.5 -1 0 0 -2 -4 -6 -8 Collector-emitter voltage Collector current -10 VCE Common emitter Ta = 100C hFE DC current gain -3 VCE = -5 V 25 -25 50 30 -10 -30 -100 Collector-emitter saturation voltage VCE (sat) (V) 300 -3 -300 Common emitter Ta = 25C -1 -0.5 -0.3 IC/IB = 20 10 5 -0.1 -0.05 -0.03 Collector current -100 VCE (sat) - IC -5 -1 -100 (V) hFE - IC 10 -0.5 -30 IC (mA) -12 500 100 -10 -3 0 IC (mA) -1 -3 -30 -10 Collector current IC (mA) IC - VBE -50 VCE (sat) - IC Common emitter Common emitter VCE = -5 V IC/IB = 10 -1 Collector current IC Collector-emitter saturation voltage VCE (sat) (V) -3 (mA) -5 -0.5 -0.3 Ta = 100C -0.1 -30 -20 Ta = 100C 25 -25 -10 25 -0.05 -0.03 -40 -25 -1 -3 -10 Collector current -30 -100 0 0 -300 IC (mA) -0.2 -0.4 -0.6 Base-emitter voltage 3 -0.8 VBE -1.0 -1.2 (V) 2004-07-07 2SA1200 Safe Operating Area PC - Ta -200 IC max (pulse)* 100 ms* IC max (continuous) 500 ms* -30 Collector power dissipation Collector current IC (mA) -100 -50 PC (mW) 1200 DC operation Ta = 25C -10 -5 -3 -1 -1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. VCEO max Tested without a substrate. -3 -10 -30 Collector-emitter voltage -100 VCE (1) Mounted on a ceramic 800 600 (2) No heat sink (1) (2) 400 200 0 0 -300 substrate (250 mm2 x 0.8 t) 1000 20 40 60 80 100 Ambient temperature (V) 4 Ta 120 140 160 (C) 2004-07-07 2SA1200 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07