2SA1200
2004-07-07
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1200
High Voltage Switching Applications
• High voltage: VCEO = −150 V
• High transition frequency: fT = 120 MHz (typ.)
• Small flat package
• PC = 1 to 2 W (mounted on a ceramic substrate)
• Complementary to 2SC2880
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −150 V
Collector-emitter voltage VCEO −150 V
Emitter-base voltage VEBO −5 V
Collector current IC −50 mA
Base current IB −10 mA
PC 500
Collector power dissipation PC
(Note 1)
800
mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: 2SA1200 mounted on a ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
PW-MINI
JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
2SA1200
2004-07-07
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = −150 V, IE = 0 ― ― −0.1 µA
Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −0.1 µA
DC current gain hFE
(Note 2)
VCE = −5 V, IC = −10 mA 70 ― 240
Collector-emitter saturation voltage VCE (sat) IC = −10 mA, IB = −1 mA ― ― −0.8 V
Base-emitter voltage VBE VCE = −5 V, IC = −30 mA ― ― −0.9 V
Transition frequency fT VCE = −30 V, IC = −10 mA ― 120 ― MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ― 4.0 5.0 pF
Note 2: hFE classification O: 70 to 140, Y: 120 to 240
Marking
B
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
2SA1200
2004-07-07
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (mA)
Collector current IC (mA)
hFE – IC
DC current gain hFE
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
hFE – IC
DC current gain hFE
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
Ta = 25°C
−0.5
300
−3−30 −1
50
10
−10
100
500
VCE = −10 V
−5
−2
30
−100
Common emitter
VCE = −5 V
−0.5
300
−3 −30 −1
50
10
−10
100
500
Ta = 100°C
25
−25
30
−100
Common emitter
Ta = 2 5 ° C
−1
−3
−10 −100 −3
−0.5
−0.03
−30
−1
−5
−0.3
−300
IC/IB = 20 10 5
−0.05
−0.1
Common emitter
IC/IB = 10
−1
−3
−10 −100 −3
−0.5
−0.03
−30
−1
−5
−0.3
−300
Ta = 100°C
25
−25
−0.05
−0.1
Common emitter
VCE = −5 V
0 −0.8 −0.4−0.2
0
−10
−50
−30
−0.6 −1.2
−20
−40
−1.0
Ta = 100°C 25 −25
Common emitter
Ta = 2 5 ° C
0 −8 −4 −2
0
−10
−50
−30
−6 −12
−20
−40
−10
IB = −100 µA
−2 mA
−1 mA
−500 µA
−300 µA
−200 µA
0
2SA1200
2004-07-07
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Safe Operating Area
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (mW)
−200
*: Single nonrepetitive pulse
Ta = 2 5 ° C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
−1
−1
−30 −10 −100 −300
−3
−30
−10
−100
−5
−50
IC max (pulse)*
DC operation
Ta = 25°C
IC max (continuous) 100 ms*
500 ms*
VCEO max
−3 0
0
600
200
800
400
1200
1000
120 80 100 40 6020 140 160
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
(1)
(2)
2SA1200
2004-07-07
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
