TIP32/TIP32A/TIP32B/TIP32C PNP Epitaxial Silicon Transistor Features * Complementary to TIP31/TIP31A/TIP31B/TIP31C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP32 : TIP32A : TIP32B : TIP32C - 40 - 60 - 80 - 100 V V V V VCEO Collector-Emitter Voltage : TIP32 : TIP32A : TIP32B : TIP32C - 40 - 60 - 80 -100 V V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -3 A ICP Collector Current (Pulse) -5 A IB Base Current -3 A PC Collector Dissipation (TC=25C) 40 W Collector Dissipation (Ta=25C) 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C (c) 2008 Fairchild Semiconductor Corporation TIP32/TIP32A/TIP32B/TIP32C Rev. A www.fairchildsemi.com 1 TIP32/TIP32A/TIP32B/TIP32C -- PNP Epitaxial Silicon Transistor July 2008 Symbol VCEO(sus) ICEO ICES Parameter * Collector-Emitter Sustaining Voltage : TIP32 : TIP32A : TIP32B : TIP32C Collector Cut-off Current : TIP32/32A : TIP32B/32C Test Condition IC = - 30mA, IB = 0 Min. Max. -40 -60 -80 -100 Units V V V V VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 - 0.3 - 0.3 mA mA VCE = - 40V, VEB = 0 VCE = - 60V, VEB = 0 VCE = - 80V, VEB = 0 VCE = - 100V, VCE = 0 - 200 - 200 - 200 - 200 A A A A -1 mA Collector Cut-off Current : TIP32 : TIP32A : TIP32B : TIP32C IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE * DC Current Gain VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A 25 10 50 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 375mA - 1.2 V VBE(sat) * Base-Emitter Saturation Voltage VCE = - 4V, IC = - 3A - 1.8 V fT Current Gain Bandwidth Product VCE = - 10V, IC = - 500mA, f = 1MHz 3.0 MHz * Pulse Test: PW300ms, Duty Cycle2% (c) 2008 Fairchild Semiconductor Corporation TIP32/TIP32A/TIP32B/TIP32C Rev. A www.fairchildsemi.com 2 TIP32/TIP32A/TIP32B/TIP32C -- PNP Epitaxial Silicon Transistor Electrical Characteristics TC=25C unless otherwise noted VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 10000 IC/IB = 10 1000 VBE(sat) 100 VCE(sat) 10 1 10000 10 IC[mA], COLLECTOR CURRENT 1000 10000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 50 IC(MAX) (PULSE) 45 PC[W], POWER DISSIPATION 100s IC(MAX) (DC) s 1m s 5m IC[A], COLLECTOR CURRENT 100 1 TIP31 VCEO MAX. TIP31A VCEO MAX. TIP31B VCEO MAX. TIP31C VCEO MAX. 40 35 30 25 20 15 10 5 0.1 0 10 100 0 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area (c) 2008 Fairchild Semiconductor Corporation TIP32/TIP32A/TIP32B/TIP32C Rev. A 25 Figure 4. Power Derating www.fairchildsemi.com 3 TIP32/TIP32A/TIP32B/TIP32C -- PNP Epitaxial Silicon Transistor Typical Characteristics TIP32/TIP32A/TIP32B/TIP32C -- PNP Epitaxial Silicon Transistor Mechanical Dimensions TO220 (c) 2008 Fairchild Semiconductor Corporation TIP32/TIP32A/TIP32B/TIP32C Rev. A www.fairchildsemi.com 4 TIP32/TIP32A/TIP32B/TIP32C PNP Epitaxial Silicon Transistor (c) 2008 Fairchild Semiconductor Corporation TIP32/TIP32A/TIP32B/TIP32C Rev. A www.fairchildsemi.com 5