Numerical Index 2N3766-2N3855A =} > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS si = : 55 | | REPLACE. | PAGE Po 7-E] Ty | Vee | Voce | = tre @ Ic Veeisan @ le 2] fo |e TYPE 2/5 | ment | number | USE & 5 2} hu. /B] |B =lc @25C | B] C | (volts) | (volts) |S | (min) (max) 5] (volts) 3 3 Sig 2N3766 S| N 7-142| LPA 20W | Cc | 175 80 60190 40 | 160 O.5A 2.5 1.0A 40 |E 15M | T 2N3767 S| N 7-142} LPA 20W} Cc} 175 100 80+ 0 40 | 160 O.5A 2.5 1.0A 40]/E 15M | T 2N3770 G| P RFA 50M} A | 100 10 6.0] 0 10 | 200 1.0M 10] E 100M | T 2N3771 S| N LPA 150W | Cj 200 50 40] 0 15 60 15A 2.0 15A 40 ]E 0.2M/T 2N3772 S| N] 2N3715 7-125] LPA 150W | C ; 200 100 60] 0 15 60 10A 1.4 LOA 40)E 0.2M/T 2N3773 S}N LPA 150W | C | 200 160 140; 0 15 60 8.0A 1.4 8.04 40 |E 0.2M)T 2N3774 S| P PMS 5.0W | C | 200 40 40] 0 20 60 0.24 0.2 O.2A 1.0M]T 2N3775 S| P PMS 5.0W | C } 200 60 6010 20 60 O.2A 0.2 0.24 1.0M |] T 2N3776 S$; P PMS 5.0W }] C } 200 80 80] 0 20 60 0.24 0.2 0.24 1.0M | T 2N3777 S| P PMS 5.0W | C | 200 100 100] 0 20 60 0.2A 0.2 0,2A 1.0MjT 2N3778 S}P PMS 5.0W | c | 200 40 40} 0 10 40 O.2A 0.2 0.24 1.OMiT 2N3779 S| P PMS 5.0W | | 200 60 60] 0 10 40 0.2A 0.2 0.24 1.0M}T 2N3780 s|P PMS 5.0W | Cj 200 80 80/0 10 40 0.2A 0.2 0.2A 1.0M|T 2N3781 S|] P PMS 5.0W {Cj 200 100 100 | 0 LO 40 0.24 0.2 0.24 1.0M | T 2N3782 S| P PMS 5,0W 7 C | 200 40 40]0 10 60 1.0A 0.75 1.0A 1.0m | T 2N3783 G]P 9984 RFA | 0.15W] A | 100 30 20) 0 20) 200 3.0M 0.25 5.0M 207E 0.86 )T 2N3784 Gi P 9-84 RFA | 0.15W } A | LOO 30 2030 20 | 200 3.0M 0.25 5.0M 20/E 0.7G|T 2N3785 Gy P 9~84 RFA] 0,15W} A | 100 15 12,0 15 | 200 3.0M 0.35 5.0M IS | E 0.7G|T 2N3788 S|N LPA 100W | Cc | 200 400 325 10 20 | 180} 0.504 50K | E 2N3789 S| P 7-147} LPA 150W | c | 200 60 60 | 0 25 90 L.OA 1.0 5.0A 25 ]E 30K | E 2N3790 S| P 7-147) LPA 150W | C | 200 60 80] 0 25 90 1.0A 1.0 5.0A 25 /E 30K | E 2N3791 S| P 7-147) LPA 150W | C | 200 60 60] 0 50 | 180 1.0A 1.0 5.0A 25 | E 30K | E 2N3792 Ss} P 7-147) LPA iow | c | 200 80 80,0 50 {| 180 1.04 1.0 5.0A 25 (EB 30K LE 2N3793 S| N | MPS6530 5-118] AFA | 0.25wW] A | 125 40 20] 0 20 {[ 120 10M 0.4 LOM 160M | T 2N3794 S] N.| MPS6531 5-118) AFA | 0.25W} A ] 125 40 20 | O | 100 | 600 1oM 0.4 LOM 100M {| T 2N3795 S| P PMS 5.0W | C | 200 120 120 | 0 12 36 1oM 0.2 10M O.5M|T aN Field Effect Transistors, see Table on Page 1-166 2N3798 S| P 8-278[ AFA | 0.36W | A | 200 60 60 | 0 4150 | 450 0.5M 0.2 0.1M 150 | E 30M } T 2N3799 s|P 8-278} AFA | 0.36W | A | 200 60 60 | 0 | 300 | 900 Q.5M Q.2 300 [ E 30M | T 2N3800 S| P 11-41] AFA | 0.25W] A | 200 60 60 | 0 | 150 | 450 O.1M 0.2 O.1M 150 | E 100M | T 2N3801 S| P 11-41] AFA | 0.25W | A | 200 60 60 | O | 300 | 900 O.1M 0.2 O.im 300 J E 100M | T 2N3802 S| P 11-41] DFA; 0.25W {A | 200 60 60 | 0 | 150 | 450 O.1M 0.2 O.1M i50 | E 100M | T 2N3803 S}|P LL-41] DFA | 0,25W } A j 200 60 60 | 0 | 300 | 900 0.1M 0.2 0.1M 300 | E LOOM | T 2N3804 S| P 11-41} DFA | 0.25W] A | 200 60 60 | 0 | 150 7 450 0.1M 0.2 O.1M 150 | E Loom | T 2N3805 S| P 11-41] DFA | 0.25W | A | 200 60 60 | O | 300 | 900 0.1M 0.2 0.1M 300 { E 100M | T 2N3806 S|, P 11-41) AFA Q.5W | A | 200 60 60 | a | 150 | 450 Q.1M G.2 O.1M IO) E LOOM | T 2N3807 Ss! P 11-41] AFA 0.5W | A | 200 60 60 | O | 300 | 900 O.1M 0.2 0.1M 300 JE 100M | T 2N3808 S|] P 11-41] DFA 0.5W | A | 200 60 60 | 0 | 150 |} 450 O.1M 0.2 O.1M 150 7E 100M | T 2N3809 S|] P 11-41] DFA O.5W 1A | 200 60 60 | oO | 300 | 900 0.1M 0.2 O.1M 300 | E 100M | T 2N3810 S| P li+41} DFA O.5W | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 0.1M 150, E 100M | T 2N3811 S| P 11-41] DFA 0.5W {| A j 200 60 60 | O | 300 j 900 O.1M 0.2 O.1M 300 | E 100M j T 2N3812 S| P 11-41] DFA 350M | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 0.1M 150 | E 100M | T 2N3813 S| P 11-41] DFA 350M | A | 200 60 60 | O | 300 | 900 0.1M 0.2 Q.1M 300 | E 100M | T 2N3814 S| P 11-41] DFA 350M | A | 200 60 60 |] 0 | 150 } 450 0.1M 0.2 0.1M 150] E LOOM } T 2N3815 S|] P 11-41] DFA 350M | A | 200 60 60 | O | 300 | 900 0.1M 0.2 O.1M 300 | E 100M | T 2N3816 $i P 11-41] DFA 350M | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 Q.1M 150 | E 100M | T 2N3817 Ss] P 1i+41| DFA 350M) A | 200 60 60 | O | 300 | 900 0.1M 0.2 0.1M 300 [E LOOM | T 2N3818 S|N 9-89 HPA 25W | C |] 175 60 60] S |5.0 50 400M 0.5 1.0A 3.0 ]E 2N3819 chew Field Effect Transistors, see Table on Page 1-166 2N382 2N3825 S| N | MPS3398 5-86 RFC | 0,25W | A | 150 30 i510 20 2.0M 0.25 2.0M 200M | T 2N3826 S| N | MPS3826 5-102] RFC O.2W | A} 150 60 4510 40 | 160 LOM 200M | T 2N3827 S| N | MPS3827 5-102 | RFC 0.2W ; A | 150 60 45 | 0 | 100 | 400 10M 200M | T 2N3828 S} N | MPS6565 5-148 | RFC 0.3W | A 4150 40 40]0 30 | 200 12M 360M | T 2N3829 S| P HSS | 0.36W | A | 200 35 20/0 30 | 120 30M 0.18 10M 350M | T 2N3830 S| N HSS 1.0W | A | 200 80 50 | 0 30 Q.15A 0.37] 0.154 200M | T 2N3831 S|N HSS L.0w | A | 200 70 40] 0 35 O.15A 0.3] 0.15A 200M | T 2N3832 S|[N HSS 0.2W | A | 200 15 6.010 25 | 125 2.0M 0.4 10M 800M | T 2n3833 | s|N HPA 25 | 1s|o]| 20 30M 2.5 2N3834 S|N HPA 25 15 }0 20 30M 2.5 ,E 2N3835 S|N HPA 25 15 | 0 20 30M 2.5 2N3836 S|N PHS L.OW | A | 200 80 60/0 2K ] 20K 2.04 1.8 5.0A 40M | T 2N3837 S| N PHS 1.,0W | A | 200 100 80] 0 2K | 20K 2.0A 1.8 5.0A 40M | T 2N3838 5 NP 11-45) HSA |] 0.25wW ] A | 200 60 40 {6 | 100 } 300 ] O.15A 0.4] 0.154 60) E 200M) T 2N33839 S| N RFA 200M | A | 200 30 15 | 0 30 3.0M 2.0G,T 2N3840 S| P CHP 0.4W | A | 200 50 50] 0 30 0.2M o.l1 5.0M 6.0M/T 2N3841 S| P CHP 0.3W {A | 200 100 100 | 0 15 0.2M 0.12 5.0M 1.5M | T 2N3842 S|] P CHP 0.3W | A | 200 120 120 | 0 10 1.0M 5.0M 1,.0M | T 2N3843 S| N | MPS6512 5-109] RFC 0.2W |] A {125 30 30/0 20 40 2.0M 60M | T 2N3843A | S|} N | MPS6512 5-109] RFC 0.2W {A | 125 30 30])0 20 40 2.0M 60M | T 2N3844 Sj] N | Mps6512 5-109} RFC 0.2W } A | 125 30 30 70 35 70 2.0M som | T 2N3844A |S | N | MPS6512 5-109] RFC 0.2W ]A | 125 30 30] 0 35 70 2.0M 90M | T 2N3845 S| N | MPS6512 5109] RFC O.2W }A 7 125 30 40] 0 60 | 120 2.0M 126M | T 2N3845A | S| N | MPS6513 5-109] RFC 0O.2W ]} A {125 30 30] 0 60 | 120 2.0M 126M ] T 2N3846 S|N LPA 4.0W | A } 175 300 200 | 0 10 60 LOA 0.75 10A 50]|)E LOM | T 2N3847 S|N LPA 4.0W | A] 175 400 300 | 0 10 60 10A 0.75 LOA 50 ]/E LOM j T 2N3848 S| N LPA 4.0W | A] 175 300 300 | 0 10 60 15A 1.0 I5A S50 |E LOM | T 2N3849 S|N LPA 4.0W FA 1175 400 300 |0 10 60 15A 1.0 15A SQ [E Lom | T 2N3850 S]N PHS 30W | C | 200 100 80/0 50 |] 150 1.04 0.25 1.0A 20M} T 2N3851L SIN PHS 30W | | 200 L100 80] 0 30 90 1.0A 0.25 1.0A 20M|T 2N3852 S| N PHS 30W | C f 200 60 4010 50 | 150 1.04 0.25 1.0A 20M/T 2N3853 S|] N PHS 30W | C | 200 60 40] 0 30 90 1.0A 0.25 1.0A 20M | T 2N3854 S| N | MPS6512 5-109] RFC O.2W | A | 150 18 18/0 35 70 2.0M 100M | T 2N3854A |S | N | MPS6512 5-109] RFC O.2W | A 4,150 30 30/0 35 70 2.0M 100M | T 2N3855 S| N | MPS6512 5-109] RFC O.2W | A | 150 18 18 | 0 60 | 120 2.0M 130M | T 2N3855A | S | N | MPS6512 5-109} RFC O,2W 4] A | 150 30 3010 60 | 120 2.0M 130M | T 1-143Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.0 mAde) BE(sat) - 0.76 (a mAdc, I, = mAdc - . c 100 B 10 mA 0. 86 Co = 300 mAdc, I, = 30 mAdc) - 11 Gy = 500 mAdc, Ip 50 mAdc) 0.9 1.2 dg = 800 mAdc, Int 80 mAdc) - 1.5 My = 1,0 Ade, 1, = 100 mAdc) - 1.7 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product fp MHz a, = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 300 - Output Capacitance Cob pF (Vop = 10 Vdc, Ip = 0, f = 140 kHz) 2N3724, 2N4013 - 12 2N3725, 2N4014 - 10 Input Capacitance Ciy pF (Var = 0.5 Vdc, Ine 0, f = 140 kHz) - 55 SWITCHING CHARACTERISTICS Turn-On Time ton - 35 ns (Vaan = 30 Vde, Vip = 3,8 Vdc 5 cc > "BE (aff) ; _ Delay Time Ig = 500 mAde, I; = 50 mAdc) a *0 ns Rise Time (See Figure 1) t. - 30 ns Turn-Off Time tote - 60 ns (Vog = 30 Vde, I, = 500 mAdc, Storage Time ~ . t - 50 ns 31 =lp2 = 50 mAdc) s Fall Time (See Figure 1) 2N3724, 2N4013 te - 25 ns 2N3725, 2N4014 - 30 * Pulse Test: Pulse Width = 300 us, Duty Cycle = 1.0%. FIGURE 1 SWITCHING TIMES TEST CIRCUIT +30Vv < > 15 -3.8V > 1.0 PF ( (o TO SAMPLING OSCILLOSCOPE 1.0k e 4 7 | Zin & 100 k22 TL t< 1.0 ns Vin = 19-7 1.0 BF 100 PULSE GENERATOR . t,. tp < 1.0ns 62 PW. ~ 1.0 ps Zin = 80.Q + == D.C. < 2.0% - ~ 8-258 RF Transistors RF POWER TRANSISTORS (Listed in order of operating test frequency and power output) ALL SILICON NPN f Pout @ Pin Type MHz Ww Ww 2N3295 30 0.3 0.012 2N3296 30 3.0 0.075 2N3297 30 12 1.2 2N2948 30 15 2.0 2N2951, 52 50 0.6 O.1 2N2949, 50 50 3.5 0.35 2N2947 50 15 2.0 2N3950 50 50 4.5 2N3298 30 0.1 - 2N3375 100 7.5 1.0 2N3818 100 15 3.0 2N3553 175 2.5 0.25 2N3961 175 4.0 0.5 2N3924 175 4.0 1.0 2N3925 175 5.0 1.3 2N3926 175 7.0 2.0 2N3927 175 12 4.0 2N3632 175 13.5 3.5 2N3137 250 0.7 0.1 2N3664 250 2.2 0.4 2N3866 400 1.0 0.1 2N3948 400 1.0 90.25 2N4012 400 3.0 (typ) 1.0 2N3375 400 3. 0 (min) 1.0 2N3733 400 10 4.0 HIGH-VOLTAGE TRANSISTORS fp (MHz) @ Ic Type Vcro min max mA 2N4924 100 100 500 20 2N4925 150 100 500 20 2N4926 200 30 300 10 2N4927 250 30 300 10 9-7 BCWwWC WW. KL)[N XQ ,' $)p0D0) 'DYi MWiwyWV BWwiwyisXsiidd;i WM WW2N38 18 (siLIcoNn) CASE 36 (TO-60) RF Transistors P= 15 W @ 100 MHz NPN silicon annular transistor for high-frequency power applications to 150 MHz. All leads isolated from case * MAXIMUM RATINGS Rating Symbol Value Unit Collector~Base Voltage Vop 60 Vde Collector~Emitter Voltage Vors 60 Vde Emitter-Base Voltage VER 4 Vdc Collector-Current (continuous) Io 2,0 Ade Base-Current (continuous) I, 1.0 mAdc Power Input (Nominal Pin 5.0 Watts Power Output (Nominal) Pout 20.0 Watts Total Device Dissipation Ph 25.0 Watts @ 25C Case Temperature Derating Factor above 25C 167 mwWw/C Junction Temperature T; 175 c Storage Temperature T stg -65 to +175 Cc * The maximum ratings as given for de conditions can be exceeded on a pulse basis, characteristics. POWER OUTPUT versus FREQUENCY COLLECTOR EFFICIENCY (%) 25 a & & < 20 = 5 a NX 15 3 Voc 2 25V a 10 2 N 9 Voc 2 15V \ Bs Pin = 3W \ " \. 0 10 20 50 100 200 300 f, FREQUENCY (:muz) 9-89 See electrical OUTPUT CHARACTERISTICS versus POWER OUT 80 60 40 20 ny 5 ~ a COLL. EFF, | 7 _ o Pout? POWER OUTPUT (WATTS) on P. in 1 2 3 POWER INPUT (WATTS) -L__| 1.0 15 . 50 ns a To: COLLECTOR CURRENT (Adc) RF Transistors 2N3818 (continued) ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustain Voltage Vors(sus)* -- Vdc To = 0.25 Adc, Ror =0 80 100 Collector-Emitter-Open Base Sustain V, Vde Voltage CEO(sus) * 1, = 0.25 Adc, Ty = 0 40 -- -- Collector -Emitter Current lor s mAdc Vog = 60 Vde, Vip = 0 -- -- 0.5 Vor = 50 Vdc, Var =0, To = 175C -- -- 1.0 Collector Cutoff Current logo pAdc Vop = 50 Vde, I, = 0 -- -- 1 Emitter Cutoff Current TpRO nAdc Vip = 4 Vdc, Ty =0 -- ~- 100 DC Current Gain hop In = 400 mAdc, Vor = 2 Vde 5.0 -- 50 In = 1 Adc, Vor = 2 Vde 5.0 -- =e Collector -Emitter Saturation Voltage Vor(s at) Vde In =1.0 Adc, In = 250 mAdc -- -- 0.5 Base-Emitter Saturation Voltage Ver (sat) Vde Iu =1.0 Adc, Ib = 250 mAdc -- -- 2.0 AC Current Gain [he | Vog = 2-0 Vde, 1, = 400 made, f = 50 mc 3 -- -- Collector Output Capacitance Cop Vop = 25 Vde, I, = 0, f = 100 kHz -- -- 40 pF Power Input Pout = 15W, f = 100 MHz in -- 3.0 3.75 Watts Vor = 25 Vdc Efficiency Toumax.) 2 1 Adc n 60 70 -- % *Pulse Measurement: Pulse Width <100 us, Duty Cycle = 2%. POWER OUTPUT versus COLLECTOR VOLTAGE POWER OUTPUT versus POWER INPUT 20 g a | & = a) < Vag = 25, B 15 = 15 CE 5 i f 4 e a Veg = BV Dp a La 5 o 2 = a 2 /| P= 25 W | B 5 LY f = 100 MHz 5 a1 t : 100 MHz_| y 1 To =25C 2 ~~ c o an | am 3 0 0 5 10 15 20 25 30 1 2 3 4 COLLECTOR-EMITTER VOLTAGE (VOLTS) 9-90 Py POWER INPUT (WATTS)