Data sheet 4 2000-03-08
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Marking Chip
BGA428 SOT363 PGs T0527
BGA428 High Gain, Low Noise Amplifi er BGA428
Preliminary
VPS05604
6
3
1
54
2
Features
•High gain, G
MA=20dB at 1.8GHz
• Low noise figure, NF= 1.4dB at 1.8GHz
• Prematched
• Ideal for GSM, DCS1800, PCS1900
• Open coll ector output
• Typical supply volt age: 2.4-3V
•SIEGET
®-45 technology
EHA07193
123
456
PGs
Direction of Unreeling
Top View Marking on SOT-363 package
(for example PGs)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
Tape loading orientation
BGA428
Data sheet 5 2000-03-08
Preliminary
Notes:
All Voltages refer to GND-Node
1) Ts is measured on the ground lead at the soldering point
2) Valid for a) ZL=50Ω and ZS=50Ω, VCC=2.7V, VOUT=2.7V, VGS=0.0V, GND=0. 0V
and b) ZL=50Ω and ZS=50Ω, VCC=0.0V, VOUT=0.0V, VGS=2. 7V, GND= 0. 0V
3) Itot= Current into OUT + Current into VCC
Maximum Ratings
Parameter Symbol Value Unit
Device voltage VCC 4V
Total Device Current3) Itot 12 mA
Voltage at pin
Out
VOut 4V
Current into pin
In
IIN 0.5 mA
Voltage at pin
GS
VGS 3.5 V
Total power dissipation, Ts < 125°C1) Ptot 50 mW
Junction temperature Tj150 °C
Operating temperature range TOP -40 ..+8 5 °C
Stor age temperature range TSTG -65 . .. +150 °C
Thermal resistance: junction-soldering point Rth JS 220 K/W
Input power2) PIN 8dBm
Electrical Characteristics at TA=25°C (measured in test circuit specifie d in fig. 1)
VCC=2.7V, Frequency=1.8GHz, unless otherwise specified
Parameter Symbol min. typ. max. Unit
Maximum available power gain GMA 20 dB
Noise f igure (ZS=50Ω) NF 1.4 dB
Input power at 1dB gain compression P-1dB -19 dBm
Inpu t third order intercep t point IIP3-9 dBm
Total device current Itot 8.2 mA
Inse rtion loss in gain-step-mode
Vcc=0.0V, VCTRL=2.7V, RCTRL=3kΩLGS 15 dB
BGA428
Data sheet 6/9 2000-03-08
Preliminary
GS
In
GND
Out
Vcc
Supply
47pF 180pF
RFout
3.9nH
0.9pF
150pF
3k
Ω
RFin
BGA428
V
CTRL
Top View
Bias-T
Bias-T
47pF 180pF 100nF 2.7V
Out
In
Reference Plane
Reference Plane
V
CTRL
GS
GND
IN V
CC
OUT
R
CTRL
=3k
Ω
Fig.1: Test Circuit for El ectrical Characteristics and S-Par ameter
Fig. 2: Application Circuit for 1850MHz
BGA428
Data sheet 7/9 2000-03-08
Preliminary
The following data refers to the application circuit given in fig. 2
A
pplication Circuit Characteristics (measur ed in test ci rcuit spe c ified in fig. 2)
T
A=25°C, Vcc=2.7V, Frequenc y=1.85GHz, unless othe rwise specified
Parameter Symbol typ. Unit
Inse rtion po w e r ga in |S21|219 dB
Noise Figure (ZS=50Ω) NF 1.4 dB
Input Powe r at 1dB Ga in Compre ssi on P-1dB -19 dBm
Input Third Order Intercept P o int IIP3-9 dBm
T
otal Device Cu rrent Itot 8.2 mA
Insertio n Lo ss in Gain -St ep -Mod e
V
cc=0.0V, VCTRL=2.7V, RCTRL=3kΩLGS 15 dB
S-Parameter at 2.7V (see Electrical Characteristics for conditions)
Freq.
[GHz] S11
Mag S11
Ang S21
Mag S21
Ang S12
Mag S12
Ang S22
Mag S22
Ang
0.100 0.6756 -31.7 58.775 -19.6 0.0005 153.5 0.9491 -3.9
0.200 0.5936 -53.6 47.806 -43.1 0.0014 138.4 0.9327 -6.3
0.300 0.5150 -71.4 39.232 -59.5 0.0021 119.0 0.9174 -8.3
0.400 0.4587 -86.6 32.740 -71.8 0.0028 104.9 0.9035 -10.3
0.600 0.4004 -110.7 23.868 -89.6 0.0042 105.9 0.8807 -14.0
0.800 0.3743 -129.1 18.509 -103.2 0.0063 94.3 0.8593 -17.7
1.000 0.3743 -143.0 14.825 -114.5 0.0082 92.4 0.8352 -21.4
1.200 0.3816 -154.5 12.288 -124.7 0.0093 87.2 0.8116 -25.1
1.400 0.3922 -164.4 10.353 -134.2 0.0110 85.3 0.7865 -28.7
1.600 0.4086 -172.4 8.879 -143.2 0.0132 79.4 0.7597 -32.2
1.800 0.4265 -178.9 7.732 -151.4 0.0141 79.4 0.7309 -36.0
1.900 0.4314 178.8 7.214 -155.2 0.0146 76.1 0.7199 -37.5
2.000 0.4371 176.1 6.771 -159.1 0.0150 77.0 0.7097 -39.1
2.200 0.4505 171.2 5.976 -166.6 0.0169 75.2 0.6791 -42.3
2.400 0.4640 167.2 5.298 -173.5 0.0181 73.2 0.6593 -45.6
3.000 0.4935 155.9 3.935 167.0 0.0217 68.3 0.5925 -53.3
4.000 0.5181 141.2 2.605 139.2 0.0282 65.1 0.5284 -64.9
5.000 0.5202 126.9 1.911 113.6 0.0319 62.2 0.4829 -75.1
6.000 0.5128 110.0 1.479 89.9 0.0489 56.0 0.4323 -81.7
BGA428
Data sheet 8/9 2000-03-08
Preliminary
Power Gain |S21|2=f(f)
VCC = 2.7V, VOut=2.7V
1.7 1.8 1.9 2 2.1
15
16
17
18
19
20
21
22
23
Frequency [GHz]
Insertion Gain [dB]
Power Gain |S21|2=f(f)
VCC = 2.7V, VOut=2.7V
0 1 2 3 4 5 6
−25
−20
−15
−10
−5
0
5
10
15
20
Frequency [GHz]
Insertion Gain [dB]
Off−Gain |S21|2=f(VCTRL)
VCC = 0.0V, VOut=0.0V,RCTRL=2.7kΩ
2 2.2 2.4 2.6 2.8 3 3.2
−20
−19
−18
−17
−16
−15
−14
−13
−12
−11
−10
VCTRL [V]
Insertion Gain [dB]
1800MHz
1990MHz
Matching |S11|,|S22|=f(f)
VCC = 2.7V, VOut=2.7V
1 1.5 2 2.5 3
−30
−25
−20
−15
−10
−5
0
Frequency [GHz]
|S11|, |S22| [dB]
S11
S22
BGA428
Data sheet 9/9 2000-03-08
Preliminary
Input Compression Point P−1dB=f(f)
1800 1850 1900 1950 2000
−20
−19.5
−19
−18.5
−18
−17.5
−17
−16.5
Frequency [MHz]
Input Compression Point [dBm]
VCC=2.4V
VCC=2.7V
VCC=2.85V
Device Current I=f(ϑ)
VCC=2.7V, VOut=2.7V
−20 0 20 40 60 80
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
9
Temperature [°C]
Device Current [mA]
Insertion Gain |S21|2=f(ϑ)
VCC=2.7V, VOut=2.7V
−20 0 20 40 60 80
15
16
17
18
19
20
21
22
23
24
25
Temperature [°C]
|S21|2 [dB]
f=1800MHz
f=1990MHz
GPS05604
±0.1
0.2
+0.1
±0.1
1.3 0.65
±0.05
B
±0.1
0.9
123
456 A
±0.2
2
acc. to
+0.2
DIN 6784
A
M
0.200.20
M
B
0.1 max
+0.1
-0.05
0.15
Package Outline
